Zobrazeno 1 - 2
of 2
pro vyhledávání: '"S. P. Grindle"'
Publikováno v:
Journal of Vacuum Science and Technology. 16:287-289
Molecular beam epitaxy has been used to grow single crystals of CuInSe2 epitaxially on CdS (0001) at 300 °C. Film composition, as determined from Auger spectroscopy, is within a few percent of stoichiometry in our best films, but all films show a va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cfc5ff6b7b670105329e1cd32171dc9
https://doi.org/10.1116/1.569928
https://doi.org/10.1116/1.569928
Publikováno v:
Journal of Applied Physics. 51:5464
We have used molecular beam epitaxy to grow CuInSe2 layers on CdS (0001B) and other substrates. Epitaxial growth is obtained at a substrate temperature of 300 °C. The ratio of the arrival rates of copper to indium is the key parameter governing laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::293031a99ebab63fa1515015203079d2
https://doi.org/10.1063/1.327504
https://doi.org/10.1063/1.327504