Zobrazeno 1 - 10
of 30
pro vyhledávání: '"S. P. Grindle"'
Publikováno v:
Journal of Vacuum Science and Technology. 16:287-289
Molecular beam epitaxy has been used to grow single crystals of CuInSe2 epitaxially on CdS (0001) at 300 °C. Film composition, as determined from Auger spectroscopy, is within a few percent of stoichiometry in our best films, but all films show a va
Publikováno v:
Journal of Applied Physics. 51:5464
We have used molecular beam epitaxy to grow CuInSe2 layers on CdS (0001B) and other substrates. Epitaxial growth is obtained at a substrate temperature of 300 °C. The ratio of the arrival rates of copper to indium is the key parameter governing laye
Autor:
Ebrahim, Shaker1 shebrahim@alex-igsr.edu.eg, Soliman, Moataz1, Shabana, Mahmoud2, Mahmoud, Kamal3, Salah, Mohamed3
Publikováno v:
International Journal of Photoenergy. 2012, Special section p1-6. 6p.
Publikováno v:
International Journal of Photoenergy. Jan2010, p1-19. 19p. 4 Diagrams, 2 Charts, 2 Graphs.
Autor:
Pereyra, Carlos J., Di Iorio, Yesica, Berruet, Mariana, Vazquez, Marcela, Marotti, Ricardo E.
Publikováno v:
Physical Chemistry Chemical Physics (PCCP); 9/28/2019, Vol. 21 Issue 36, p20360-20371, 12p
Publikováno v:
Journal of Applied Physics; Oct1980, Vol. 51 Issue 10, p5464-5469, 6p
Publikováno v:
Technical Physics Letters. Jan2001, Vol. 27 Issue 1, p49. 3p.
Autor:
Alamri, S., Alsadi, H.
Publikováno v:
Journal of the Korean Physical Society; Jul2015, Vol. 67 Issue 2, p350-354, 5p
Publikováno v:
Energy & Environmental Science; 2014, Vol. 7 Issue 1, p190-208, 19p
Publikováno v:
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997; 1997, p559-562, 4p