Zobrazeno 1 - 10
of 16
pro vyhledávání: '"S. Püspöki"'
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 23:334-338
Arrays of five InGaAsP/InP single mode junction-defined buried stripe heterostructure lasers are described. The laser arrays were grown on multi-channeled InP substrate by single-step liquid phase epitaxy. The buried double heterostructure and the la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad60281448a67cc70aa4f0f99d611cda
https://doi.org/10.1016/j.physe.2003.11.281
https://doi.org/10.1016/j.physe.2003.11.281
Publikováno v:
Vacuum. 71:113-116
Cr+Au and Ag Schottky diodes were prepared on n-type InP by using HF or Na 2 S+HF surface treatment for zero bias microwave detector purposes. The diodes were studied by current–voltage and capacitance–voltage measurements in the temperature rang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c475f5f9390c3642f0d73f5bc4e74df4
https://doi.org/10.1016/s0042-207x(02)00723-6
https://doi.org/10.1016/s0042-207x(02)00723-6
Publikováno v:
physica status solidi (c). :916-921
Cr+Au and Ag Schottky diodes were prepared on n-type InP by using HF or Na 2 S+HF surface treatment for zero bias microwave detector purposes. The diodes were studied by current-volta ge (I-V) and capacitance-voltage measurements in the temperature r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc10ce38c9e7c7b0d43027e05e0828d1
https://doi.org/10.1002/pssc.200306225
https://doi.org/10.1002/pssc.200306225
Publikováno v:
physica status solidi (c). :956-960
The wavelength reproducibility of the LPE growth of InGaAsP/InP LED wafers has been investigated by near-infrared transmission spectroscopy. The band gap wavelengths determined from the transmission measurements were shorter than the peak emission wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b02856f2800decc7119a6a4e06e35785
https://doi.org/10.1002/pssc.200306324
https://doi.org/10.1002/pssc.200306324
Publikováno v:
Materials Science and Engineering: B. :491-494
InGaAsP/InP double heterostructure infrared emitting diodes were grown by liquid phase epitaxy. Eleven different diodes were fabricated with optimal spacing of their peak emission wavelengths in order to have sufficient overlapping of their spectra.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f06838de6e9f350b205629634c5483a8
https://doi.org/10.1016/s0921-5107(01)01013-3
https://doi.org/10.1016/s0921-5107(01)01013-3
Publikováno v:
Materials Science and Engineering: B. 28:296-298
InP/InGaAsP buried heterostructure lasers for a wavelength of 1.15 μm with optimized parameters can play an important role as pump sources for blue-upwards conversion fiber lasers. This paper reports the single-step liquid phase epitaxial growth and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd93ae7f3d72f2a86a7a6131105e19c0
https://doi.org/10.1016/0921-5107(94)90068-x
https://doi.org/10.1016/0921-5107(94)90068-x
Autor:
S. Püspöki, G. Pataki
Publikováno v:
Acta Physica Academiae Scientiarum Hungaricae. 30:99-103
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ecc128a62a54a63a3da311f4fb921ec
https://doi.org/10.1007/bf03157181
https://doi.org/10.1007/bf03157181
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