Zobrazeno 1 - 10
of 29
pro vyhledávání: '"S. Olibet"'
Autor:
S. Olibet, Rudolf Brüggemann
Publikováno v:
Energy Procedia. 2:19-26
The density of defects at the interface between the amorphous and crystalline silicon layers limits the photovoltaic device performance of amorphous silicon / crystalline silicon heterojunction solar cells. We investigate the electroluminescence prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2615f5ba2cc418ab452adcb62073b0d3
https://doi.org/10.1016/j.egypro.2010.07.005
https://doi.org/10.1016/j.egypro.2010.07.005
Autor:
Christophe Ballif, J. Damon-Lacoste, Christian Monachon, L. Fesquet, Aïcha Hessler-Wyser, S. Olibet, Evelyne Vallat-Sauvain, Stefaan De Wolf
Publikováno v:
physica status solidi (a). 207:651-656
To study recombination at the amorphous/crystalline Si (a- Si:H/c-Si) heterointerface, the amphoteric nature of silicon (Si) dangling bonds is taken into account. Modeling interface recombination measured on various test structures provides insight i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ad8923b5e1b555fa7ef6b12f97244c6
https://doi.org/10.1002/pssa.200982845
https://doi.org/10.1002/pssa.200982845
Publikováno v:
Thin Solid Films. 517:6401-6404
We use a new in-house, large area and automated deposition system: the usable deposition area is 410 × 520 mm with RF-frequency of 40 MHz. We deposit intrinsic a-Si:H layer on flat p-type or n-type c-Si wafers after performing an HF dip. The overall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bfa6c939cef9d13ec7e903a786814e4
https://doi.org/10.1016/j.tsf.2009.02.066
https://doi.org/10.1016/j.tsf.2009.02.066
Autor:
S. De Wolf, Aïcha Hessler-Wyser, J. Damon-Lacoste, Christophe Ballif, Christian Monachon, S. Olibet, L. Fesquet
Publikováno v:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
Crystalline silicon wafer (c-Si) can be extremely well passivated by plasma enhanced chemical vapor deposited (PECVD) amorphous silicon (a-Si:H) films. As a result, on flat substrates, solar cells with very high open circuit voltage are readily obtai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fae0051b251d6132eb77d85fdad1c1a
https://doi.org/10.1109/pvsc.2009.5411173
https://doi.org/10.1109/pvsc.2009.5411173
The performance of many silicon devices is limited by electronic recombination losses at the crystalline silicon (c-Si) surface. A proper surface passivation scheme is needed to allow minimizing these losses. The surface passivation properties of amo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85c576d57a03a0da95e46755399db335
http://doc.rero.ch/record/9417/files/Olibet_Sara_-_Model_for_a-Si_H_c_interface_20080613.pdf
http://doc.rero.ch/record/9417/files/Olibet_Sara_-_Model_for_a-Si_H_c_interface_20080613.pdf
Publikováno v:
Proceedings Eurographics/IEEE VGTC Symposium Point-Based Graphics, 2005..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c0c2f6f86c3ae71f6953e5b3afe4f2d
https://doi.org/10.1109/pbg.2005.194072
https://doi.org/10.1109/pbg.2005.194072
Publikováno v:
Applied Physics Letters. 93:032101
The electronic properties of hydrogenated amorphous silicon (a-Si:H) relax following stretched exponentials. This phenomenon was explained in the past by dispersive hydrogen diffusion, or by retrapping included hydrogen motion. In this letter, the au
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0c828b954b69ef12a14796f03ad1c34
https://doi.org/10.1063/1.2956668
https://doi.org/10.1063/1.2956668
Publikováno v:
EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany ISBN: 9783540852254
Increasing the efficiency of crystalline silicon (c-Si) solar cells requires the reduction of both bulk and interface recombination. Even if bulk recombination is almost suppressed, the symmetry of the crystal lattice is disturbed at the surface and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e245a443352d5d64afe234c3b3d0aed5
https://infoscience.epfl.ch/record/146539
https://infoscience.epfl.ch/record/146539
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Akademický článek
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