Zobrazeno 1 - 10
of 261
pro vyhledávání: '"S. Olibet"'
Autor:
S. Olibet, Rudolf Brüggemann
Publikováno v:
Energy Procedia. 2:19-26
The density of defects at the interface between the amorphous and crystalline silicon layers limits the photovoltaic device performance of amorphous silicon / crystalline silicon heterojunction solar cells. We investigate the electroluminescence prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2615f5ba2cc418ab452adcb62073b0d3
https://doi.org/10.1016/j.egypro.2010.07.005
https://doi.org/10.1016/j.egypro.2010.07.005
Autor:
Christophe Ballif, J. Damon-Lacoste, Christian Monachon, L. Fesquet, Aïcha Hessler-Wyser, S. Olibet, Evelyne Vallat-Sauvain, Stefaan De Wolf
Publikováno v:
physica status solidi (a). 207:651-656
To study recombination at the amorphous/crystalline Si (a- Si:H/c-Si) heterointerface, the amphoteric nature of silicon (Si) dangling bonds is taken into account. Modeling interface recombination measured on various test structures provides insight i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ad8923b5e1b555fa7ef6b12f97244c6
https://doi.org/10.1002/pssa.200982845
https://doi.org/10.1002/pssa.200982845
Publikováno v:
Thin Solid Films. 517:6401-6404
We use a new in-house, large area and automated deposition system: the usable deposition area is 410 × 520 mm with RF-frequency of 40 MHz. We deposit intrinsic a-Si:H layer on flat p-type or n-type c-Si wafers after performing an HF dip. The overall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bfa6c939cef9d13ec7e903a786814e4
https://doi.org/10.1016/j.tsf.2009.02.066
https://doi.org/10.1016/j.tsf.2009.02.066
Autor:
S. De Wolf, Aïcha Hessler-Wyser, J. Damon-Lacoste, Christophe Ballif, Christian Monachon, S. Olibet, L. Fesquet
Publikováno v:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
Crystalline silicon wafer (c-Si) can be extremely well passivated by plasma enhanced chemical vapor deposited (PECVD) amorphous silicon (a-Si:H) films. As a result, on flat substrates, solar cells with very high open circuit voltage are readily obtai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fae0051b251d6132eb77d85fdad1c1a
https://doi.org/10.1109/pvsc.2009.5411173
https://doi.org/10.1109/pvsc.2009.5411173
The performance of many silicon devices is limited by electronic recombination losses at the crystalline silicon (c-Si) surface. A proper surface passivation scheme is needed to allow minimizing these losses. The surface passivation properties of amo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85c576d57a03a0da95e46755399db335
http://doc.rero.ch/record/9417/files/Olibet_Sara_-_Model_for_a-Si_H_c_interface_20080613.pdf
http://doc.rero.ch/record/9417/files/Olibet_Sara_-_Model_for_a-Si_H_c_interface_20080613.pdf
Publikováno v:
Proceedings Eurographics/IEEE VGTC Symposium Point-Based Graphics, 2005..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c0c2f6f86c3ae71f6953e5b3afe4f2d
https://doi.org/10.1109/pbg.2005.194072
https://doi.org/10.1109/pbg.2005.194072
Publikováno v:
Applied Physics Letters. 93:032101
The electronic properties of hydrogenated amorphous silicon (a-Si:H) relax following stretched exponentials. This phenomenon was explained in the past by dispersive hydrogen diffusion, or by retrapping included hydrogen motion. In this letter, the au
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0c828b954b69ef12a14796f03ad1c34
https://doi.org/10.1063/1.2956668
https://doi.org/10.1063/1.2956668
Publikováno v:
Journal of Applied Physics; 8/21/2023, Vol. 134 Issue 7, p1-11, 11p
Autor:
Bhattacharya, Shrestha1 (AUTHOR), Pandey, Ashutosh1 (AUTHOR), Panigrahi, Jagannath1 (AUTHOR), Mandal, Sourav1 (AUTHOR), Komarala, Vamsi Krishna1 (AUTHOR) vamsi@iitd.ac.in
Publikováno v:
Applied Physics A: Materials Science & Processing. Feb2023, Vol. 129 Issue 2, p1-9. 9p.
Autor:
Geml, Fabian1 (AUTHOR) fabian.geml@uni-konstanz.de, Gapp, Benjamin1 (AUTHOR), Johnson, Simon2 (AUTHOR), Sutton, Patricia2 (AUTHOR), Goode, Angela2 (AUTHOR), Booth, Jonathan2 (AUTHOR), Plagwitz, Heiko1 (AUTHOR), Hahn, Giso1 (AUTHOR)
Publikováno v:
EPJ Photovoltaics. 2023, Vol. 14, p1-10. 10p.