Zobrazeno 1 - 10
of 334
pro vyhledávání: '"S. Ohmi"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 775-778 (2024)
In this work, we have investigated the conductance control of the metal-ferroelectrics-Si field-effect transistor (MFSFET) utilizing 5 nm thick ferroelectric nondoped $\rm HfO_{2}$ (FeND-HfO2) gate insulator. The Kr-plasma process is effective to dec
Externí odkaz:
https://doaj.org/article/d05bcba54959459089c5030c8ccfe8fa
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1036-1040 (2021)
We have investigated the ferroelectric hafnium nitride (HfN) thin films directly formed on the Si(100) substrate for the metal-ferroelectrics-Si field-effect transistor (MFSFET) applications. The 10 nm thick rhombohedral phase HfN layer was found to
Externí odkaz:
https://doaj.org/article/e4f333fec4944a6bbd02b40314194748
Akademický článek
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Publikováno v:
2022 Device Research Conference (DRC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a02eeb149e9209ed2128e60c498f9505
https://doi.org/10.1109/drc55272.2022.9855780
https://doi.org/10.1109/drc55272.2022.9855780
Publikováno v:
2022 Device Research Conference (DRC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d6e920a02ef832b95c0026e8a75aef7
https://doi.org/10.1109/drc55272.2022.9855792
https://doi.org/10.1109/drc55272.2022.9855792
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1036-1040 (2021)
We have investigated the ferroelectric hafnium nitride (HfN) thin films directly formed on the Si(100) substrate for the metal-ferroelectrics-Si field-effect transistor (MFSFET) applications. The 10 nm thick rhombohedral phase HfN layer was found to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f83b557768a712ce10f6f3d39a895f6
https://ieeexplore.ieee.org/document/9590540/
https://ieeexplore.ieee.org/document/9590540/
Autor:
Ichiro Fujiwara, S. Ohmi, Kuniyuki Kakushima, H. Wakabayashi, Joel Molina, Hiroshi Funakubo, Kazuo Tsutsui, T. Shimizu, Takanori Mimura, Takuya Hoshii, Atsushi Hori, Yoshiko Nakamura
Publikováno v:
2020 IEEE International Memory Workshop (IMW).
A novel BEOL compatible three-layered structure based on ferroelectric (FE) HfO 2 device is proposed for endurance improvement. This structure consists of an ultrathin Y 2 O 3 passivation layer, a FE Y-doped HfO 2 layer (YHO, deposited at room temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f96245df88e8fcc72a15a440e9bf2714
https://doi.org/10.1109/imw48823.2020.9108148
https://doi.org/10.1109/imw48823.2020.9108148
Akademický článek
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Autor:
N. Imai, M. Dozono, S. Michimasa, T. Sumikama, S. Ota, S. Hayakawa, J.W. Hwang, K. Iribe, C. Iwamoto, S. Kawase, K. Kawata, N. Kitamura, S. Masuoka, K. Nakano, P. Schrock, D. Suzuki, R. Tsunoda, K. Wimmer, D.S. Ahn, O. Beliuskina, N. Chiga, N. Fukuda, E. Ideguchi, K. Kusaka, H. Miki, H. Miyatake, D. Nagae, S. Ohmika, M. Ohtake, H.J. Ong, H. Otsu, H. Sakurai, H. Shimizu, Y. Shimizu, X. Sun, H. Suzuki, M. Takaki, H. Takeda, S. Takeuchi, T. Teranishi, Y. Watanabe, Y.X. Watanabe, K. Yako, H. Yamada, H. Yamaguchi, L. Yang, R. Yanagihara, Y. Yanagisawa, K. Yoshida, S. Shimoura
Publikováno v:
Physics Letters B, Vol 850, Iss , Pp 138470- (2024)
γ emission probabilities from unbound states in 78,80Se, populated by a neutron-transfer reaction (d,p) on 77,79Se nuclei in inverse kinematics, were measured by directly detecting reaction residues. Assuming the spin distribution at the respective
Externí odkaz:
https://doaj.org/article/2cef34b0fcb84b80abec53c72c365520
Improvement of Hf-based MONOS Nonvolatile Memory Characteristics by Si Surface Atomically Flattening
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c862c1c2fa6a9b70e6436b3941227636
https://doi.org/10.7567/ssdm.2019.ps-2-08
https://doi.org/10.7567/ssdm.2019.ps-2-08