Zobrazeno 1 - 10
of 44
pro vyhledávání: '"S. O. Usov"'
Autor:
W. V. Lundin, Pavel N. Brunkov, E. E. Zavarin, S. O. Usov, A. V. Sakharov, A. F. Tsatsul’nikov
Publikováno v:
Technical Physics Letters. 46:1211-1214
We have studied the growth of GaN layers by the metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates at various reactor pressures, including ones above the atmospheric level. It is established that the epitaxial growth at higher pressures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb06c08ab4b2dd20b7256500d35c9726
https://doi.org/10.1134/s1063785020120263
https://doi.org/10.1134/s1063785020120263
Autor:
S. N. Rodin, A. V. Sakharov, G. V. Voznyuk, M. A. Kaliteevskii, A. F. Tsatsul’nikov, V. P. Evtikhiev, I. V. Levitskii, S. O. Usov, M. I. Mitrofanov, W. V. Lundin
Publikováno v:
Semiconductors. 53:2121-2124
The effect of annealing temperature and time on the luminescence intensity of the InGaN/GaN heterostructure subjected to ion beam etching was studied. We show that annealing at a temperature of 1100°C makes it possible to eliminate the radiation def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a50b1c58de65f4e6dbae1c7342d1ef2
https://doi.org/10.1134/s106378261912025x
https://doi.org/10.1134/s106378261912025x
GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography
Autor:
S. O. Usov, A. F. Tsatsul’nikov, V. P. Evtikhiev, I. V. Levitskii, A. V. Sakharov, M. A. Kaliteevski, S. N. Rodin, M. I. Mitrofanov, W. V. Lundin
Publikováno v:
Physics of the Solid State. 61:2335-2337
A significant difference in the growth mechanism of spatially closed structures of gallium nitride during selective growth in submicron windows with and without penetration into the GaN sublayer was demonstrated. The mechanisms of generation and deve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61a1fa7f626864db5ac09c9a227cee54
https://doi.org/10.1134/s106378341912045x
https://doi.org/10.1134/s106378341912045x
Autor:
M. I. Mitrofanov, V. P. Evtikhiev, A. F. Tsatsul’nikov, A. V. Sakharov, W. V. Lundin, S. O. Usov, S. N. Rodin, I. V. Levitskii
Publikováno v:
Semiconductors. 52:1357-1362
The selective epitaxial growth of GaN by metalorganic vapor-phase epitaxy combined with ion-beam etching is investigated. To this end, partially masked GaN epitaxial layers are fabricated by depositing a thin Si3N4 layer onto the surface in a single
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1efb0d0d1212506688e2e7dd0806808
https://doi.org/10.1134/s106378261810007x
https://doi.org/10.1134/s106378261810007x
Autor:
S. O. Usov, D. A. Zakheim, W. V. Lundin, P. E. Sim, L. E. Velikovskiy, N. Y. Kurbanova, A. F. Tsatsul’nikov, M. A. Yagovkina, E. E. Zavarin, A. V. Sakharov, O. I. Demchenko
Publikováno v:
Semiconductors. 52:1843-1845
InAlN/AlN/GaN semiconductor heterostructures with a barrier thickness of 5–13 nm have been grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire and SiC substrates. Optimization of GaN buffer and InAlN layers allows fabricating structures w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d14652e700aa26ae4bfae14657d86868
https://doi.org/10.1134/s1063782618140257
https://doi.org/10.1134/s1063782618140257
Autor:
M. A. Yagovkina, V. M. Ustinov, V. I. Egorkin, V. W. Lundin, K. A. Bulashevich, A. V. Sakharov, A. F. Tsatsul’nikov, V. E. Zemlyakov, S. Yu. Karpov, S. O. Usov, E. E. Zavarin
Publikováno v:
Semiconductors. 50:1383-1389
The effect of the layer thickness and composition in AlGaN/AlN/GaN and InAlN/AlN/GaN transistor heterostructures with a two-dimensional electron gas on their electrical and the static parameters of test transistors fabricated from such heterostructur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc6cef6500af57b5c6087b6ff36f8213
https://doi.org/10.1134/s1063782616100237
https://doi.org/10.1134/s1063782616100237
Autor:
D. S. Arteev, S. O. Usov, Sergey Yu. Karpov, W. V. Lundin, Andrey E. Nikolaev, A. V. Sakharov, A. F. Tsatsul’nikov
Publikováno v:
Semiconductor Science and Technology. 35:045017
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2249ad4d0c48214a5cf0caee4b2b3235
https://doi.org/10.1088/1361-6641/ab74ef
https://doi.org/10.1088/1361-6641/ab74ef
Autor:
W. V. Lundin, Andrey E. Nikolaev, A. V. Sakharov, S. O. Usov, D. S. Arteev, A.F. Tsatsulnikov
Publikováno v:
2018 International Conference Laser Optics (ICLO).
Dependence of electroluminescence spectrum shape of blue-cyan InGaN-based dichromatic double quantum well light emitting diodes on the thickness and doping level of the barrier between quantum wells was investigated numerically and experimentally.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0565d24b2ffd9d8c8e8217c0e53b0ebe
https://doi.org/10.1109/lo.2018.8435734
https://doi.org/10.1109/lo.2018.8435734
Autor:
A. V. Sakharov, W. V. Lundin, S. Yu. Karpov, Andrey E. Nikolaev, A. F. Tsatsulnikov, M. A. Sinitsin, E. E. Zavarin, S. O. Usov, Nikolay Cherkashin
Publikováno v:
physica status solidi (a). 213:19-29
InGaN-based monolithic multi-color light emitting diodes (LEDs) are studied both experimentally and theoretically with the focus on factors controlling their emission spectra and efficiency. A number of LEDs with different designs of spacers separati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5866b0909d4b009ec754ecd492500a0
https://doi.org/10.1002/pssa.201532491
https://doi.org/10.1002/pssa.201532491
Autor:
W. V. Lundin, M. A. Yagovkina, Andrey E. Nikolaev, Nikolay Cherkashin, E. E. Zavarin, A. V. Sakharov, A. F. Tsatsul’nikov, Pavel N. Brunkov, S. O. Usov
Publikováno v:
Semiconductors
Semiconductors, 2014, 48 (1), pp.53-57. ⟨10.1134/S1063782614010199⟩
Semiconductors, 2014, 48 (1), pp.53-57. ⟨10.1134/S1063782614010199⟩
cited By 2; International audience; III-N blue LED structures with active regions based on InGaN nanoislands are studied. The structures are grown by metalorganic vapor-phase epitaxy (MOVPE) on GaN layers deposited by various methods for the initial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa1ea82e3fe96454cd03f305b16fbb9a
https://doi.org/10.1134/s1063782614010199
https://doi.org/10.1134/s1063782614010199