Zobrazeno 1 - 2
of 2
pro vyhledávání: '"S. Novosiadly"'
Publikováno v:
Фізика і хімія твердого тіла, Vol 20, Iss 3, Pp 311-317 (2019)
In this paper, the structure of GaAs FET on a silicon substrate, suitable for local integration in the local SOItechnologyand the method of its electrophysical diagnostics based on changes in the thermal resistance (RT), isanalyzed. It is known [3,4]
Externí odkaz:
https://doaj.org/article/b52e1eb84f464bfe8decc0de638ed432
Publikováno v:
Фізика і хімія твердого тіла, Vol 20, Iss 3, Pp 311-317 (2019)
In this paper, the structure of GaAs FET on a silicon substrate, suitable for local integration in the local SOI technology and the method of its electrophysical diagnostics based on changes in the thermal resistance (RT), is analyzed. It is known th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ff5a9e3b1f7890965d8d854e0f78cc4
http://journals.pu.if.ua/index.php/pcss/article/view/3969
http://journals.pu.if.ua/index.php/pcss/article/view/3969