Zobrazeno 1 - 10
of 53
pro vyhledávání: '"S. N. Vdovichev"'
Autor:
G. M. Bubnov, Vyacheslav Vdovin, Artem Chekushkin, Valery P. Koshelets, V. K. Dubrovich, Lyudmila V. Filippenko, S. A. Lemzyakov, Andrey M. Baryshev, K. I. Rudakov, V. S. Edelman, D. V. Nagirnaya, Andrey Smirnov, S. N. Vdovichev, Yu. Yu. Balega, A. A. Gunbina, G. V. Yakopov, M. A. Tarasov, I. I. Zinchenko, P. N. Dmitriev, Andrey Khudchenko, R. A. Yusupov, V. B. Haikin
Publikováno v:
Radiophysics and quantum electronics, 63(7), 479-500. SPRINGER
We give a review of both our own original scientific results of the development of superconducting receivers for sub-terahertz astronomy and the main leading concepts of the global instrumentation. The analysis of current astronomical problems, the r
Autor:
S. N. Vdovichev, A. V. Petrenko, E. Kh. Mukhamedzhanov, M. M. Borisov, E. I. Litvinenko, Attila Csik, V. D. Zhaketov, O. V. Skryabina, A. V. Churakov, Yu. N. Khaidukov, Yu. V. Nikitenko
Publikováno v:
Journal of Experimental and Theoretical Physics. 129:258-276
The heterogeneous ferromagnetic–superconducting layered heterostructures V/Fe0.7V0.3/V/Fe0.7V0.3/Nb and Nb/Ni0.65(0.81)Cu0.35(0.19), which contain magnetic clusters and ferromagnetic domains, are studied. The magnetic and superconducting properties
Autor:
V. D. Zhaketov, V. L. Aksenov, N. A. Gundorin, Yu. V. Nikitenko, Yu. N. Kopatch, A. V. Petrenko, E. Sansarbayar, Attila Csik, Yu. M. Gledenov, S. N. Vdovichev, V. V. Travkin
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 13:478-487
An ionization chamber is installed to the REMUR neutron spectrometer, situated at channel no. 8 of the IBR-2. A layered structure containing a layer of the isotope under study with a thickness of several nanometers is placed into the chamber. A neutr
Publikováno v:
Technical Physics. 64:116-120
Novel field emitters made of contacting hafnium and platinum layers have been studied. Calculations aimed at optimizing the characteristics of the multilayer emitters have been conducted. Field emission currents up to 2.0–2.5 mA at a (tentative) cu
Autor:
A. V. Petrenko, Attila Csik, A. V. Churakov, S. N. Vdovichev, V. D. Zhaketov, Yu. V. Nikitenko
Publikováno v:
Journal of Experimental and Theoretical Physics. 127:508-515
We have studied the Nb(70 nm)/Ni0.65Cu0.35(6.5 nm)/Si layered structure in the temperature range T = 1.5–10 K using polarized neutron reflectometry. The correlation of the states of magnetic structures is observed at temperature T = 9 K, which is s
Publikováno v:
Ultramicroscopy. 179:41-46
We present the use of custom-made multilayer (ML) magnetic probes in magnetic force microscopy (MFM) for imaging soft magnetic structures, i.e. nickel submicron disks of different dimensions. One of the main advantages of a custom-made ML probe is th
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 11:501-504
The problem of determining the center and radius of a substrate in the shape of a circular disc is considered. We propose an original functional having a clear geometric interpretation. Determination of the extremum of this functional reduces to a li
Publikováno v:
Journal of Experimental and Theoretical Physics. 124:617-622
The peculiarities of absorption of rf electromagnetic radiation (ferromagnetic resonance) in multilayer NiFe/Ni0.65Cu0.35(d)/CoFe structures in a wide temperature range are analyzed. It is shown that the type of interaction of the NiFe and CoFe ferro
Autor:
A. S. Mukhin, O. G. Udalov, A. Yu. Klimov, V. F. Vdovin, V. V. Rogov, S. N. Vdovichev, Yu. N. Nozdrin
Publikováno v:
Radiophysics and Quantum Electronics. 59:727-733
We present the results of creating a cooled microbolometer based on the cermet films of the silicon and chromium mixture. This material is used for manufacturing the freely hanging high-resistive microbolometers for the first time. The details of fab
Autor:
E. E. Morozova, Mikhail Shaleev, V. B. Shmagin, Z. F. Krasilnik, D. V. Shengurov, S. N. Vdovichev, A. V. Novikov
Publikováno v:
Semiconductors. 50:1475-1478
We report on the electroluminescence from silicon-based metal–insulator–semiconductor (MIS) diodes with arrays of self-assembled Ge(Si) nanoislands. Aluminum oxide (Al2O3) is used as an insulator material in the MIS contact. Variations in the ele