Zobrazeno 1 - 10 of 74 pro vyhledávání: '"S. N. Varnakov"'
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Akademický článek
Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure
Autor: N. V. Volkov, A. S. Tarasov, D. A. Smolyakov, A. O. Gustaitsev, M. V. Rautskii, A. V. Lukyanenko, M. N. Volochaev, S. N. Varnakov, I. A. Yakovlev, S. G. Ovchinnikov
Publikováno v: AIP Advances, Vol 7, Iss 1, Pp 015206-015206-13 (2017)
We report on abrupt changes in dc resistance and impedance of a diode with the Schottky barrier based on the Mn/SiO2/p-Si structure in a magnetic field. It was observed that at low temperatures the dc and ac resistances of the device change by a fact
Externí odkaz: https://doaj.org/article/1c43dab3db18497fba9d789bcbf15b41
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4
Role of Interfaces in the Permittivity Tensor of Thin Layers of a Ferromagnetic Metal
Autor: Sergey Ovchinnikov, I. A. Yakovlev, S. A. Lyaschenko, S. N. Varnakov, O. A. Maximova
Publikováno v: JETP Letters. 114:163-165
It is known from experimental studies that the components of the permittivity tensor e depend on layer thicknesses of multilayer thin films, and for nanometer layers, it is necessary to additionally consider the interlayer interfaces. This study prov
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f2aa809979eec62286d41e31f366e48b
https://doi.org/10.1134/s0021364021150066
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5
Spin Accumulation in the Fe3Si/n-Si Epitaxial Structure and Related Electric Bias Effect
Autor: I. A. Yakovlev, I. A. Bondarev, A. S. Tarasov, S. N. Varnakov, N. V. Volkov, Sergey Ovchinnikov, A. V. Lukyanenko
Publikováno v: Technical Physics Letters. 46:665-668
The electrical injection of the spin-polarized current into silicon in the Fe3Si/n-Si epitaxial structure is demonstrated. The spin accumulation effect is examined by measuring the local and nonlocal voltage in a special four-terminal device. The obs
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4c3fb391b4099a55acf843cb72014e63
https://doi.org/10.1134/s1063785020070135
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6
Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi2 and Si phases
Autor: Maxim A. Visotin, Alexander S. Fedorov, Sergey Ovchinnikov, S. N. Varnakov, I. A. Tarasov
Publikováno v: Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials. 76:469-482
A pure crystallogeometrical approach is proposed for predicting orientation relationships, habit planes and atomic structures of the interfaces between phases, which is applicable to systems of low-symmetry phases and epitaxial thin film growth. The
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9958734eadb27757d627ad4776811979
https://doi.org/10.1107/s2052520620005727
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7
Growth of Textured Au–Fe/Fe Hybrid Nanocrystals on Oxidized Silicon Surface
Autor: N. N. Kosyrev, Ivan V. Nemtsev, S. N. Varnakov, S. G. Patrin, I. A. Yakovlev, V. A. Komarov, T. E. Smolyarova, I. A. Tarasov, Sergey Ovchinnikov
Publikováno v: Semiconductors. 52:2073-2077
We present in this report the route to produce highly-textured Au3Fe(111)/Fe(110) hybrid nanocrystals on an amorphous surface of SiO2/Si by molecular beam epitaxy. By controlling the quantity of Au atoms deposited onto the SiO2/Si it is possible to t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::57bad10b9cfe163a2491aa59ddf8473e
https://doi.org/10.1134/s1063782618160364
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8
Fabrication and DC/AC Characterization of 3-Terminal Ferromagnet/Silicon Spintronics Devices
Autor: F. A. Baron, T. E. Smolyarova, A. S. Tarasov, M. V. Rautskii, I. A. Yakovlev, A. V. Lukyanenko, N. V. Volkov, Sergey Ovchinnikov, I. A. Bondarev, S. N. Varnakov
Publikováno v: Semiconductors. 52:1875-1878
CMOS and SOI technology compatible structures and devices are currently intensively investigated by many research groups, since various effects observed in such structures can be relatively easy implemented in electronic devices thereby expanding the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c6d7f2ec90678774e64fd41d8fb8b7c7
https://doi.org/10.1134/s1063782618140312
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9
Multilayered Ferromagnetic Nanostructures Study: Processing Data from Magneto-Ellipsometry Measurements
Autor: S. A. Lyaschenko, Sergey Ovchinnikov, S. N. Varnakov, O. A. Maximova
Publikováno v: Defect and Diffusion Forum. 386:131-136
Nowadays, the magneto-ellipsometry technique is considered as a promising tool for studying nanostructures. It leads to a great demand of both designing set-ups for conducting experiments and developing approaches to data processing. The later one is
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::33ca08e9f5506062a6c4d6e5092373a7
https://doi.org/10.4028/www.scientific.net/ddf.386.131
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10
Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi
Autor: Maxim A, Visotin, I A, Tarasov, A S, Fedorov, S N, Varnakov, S G, Ovchinnikov
Publikováno v: Acta crystallographica Section B, Structural science, crystal engineering and materials. 76(Pt 3)
A pure crystallogeometrical approach is proposed for predicting orientation relationships, habit planes and atomic structures of the interfaces between phases, which is applicable to systems of low-symmetry phases and epitaxial thin film growth. The
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::061677d7659d7500d2a971f6562e3ea3
https://pubmed.ncbi.nlm.nih.gov/32831264
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