Zobrazeno 1 - 10
of 10
pro vyhledávání: '"S. N. Schauer"'
Publikováno v:
Journal of Electronic Materials. 23:991-996
The results of electrical and structural characterization of a GeMoW ohmic contact to n-type GaAs with a 100A thick, In0.5Ga0.5As cap layer are presented. Electrical characterization demonstrates ohmic behavior over a wide annealing temperature range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ad7a3fe20b719f0099113a8d8cbeb3c
https://doi.org/10.1007/bf02655375
https://doi.org/10.1007/bf02655375
Publikováno v:
Materials Science and Engineering: B. 25:175-178
This paper demonstrates WTiAu as a thermally stable, low resistance, non-alloyed, emitter ohmic contact for GaAsAlGaAs heterojunction bipolar transistor applications. The minimum W layer thickness required for low contact resistance and long-term
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2530165eb05c2862d8258c5009178975
https://doi.org/10.1016/0921-5107(94)90221-6
https://doi.org/10.1016/0921-5107(94)90221-6
Publikováno v:
Diamond and Related Materials. 3:672-676
Phosphorus-doped diamond films were grown from CH 4 and H 2 using d.c. and microwave plasmas with PH 3 as the dopant source. The P incorporation which was quantified using secondary ion mass spectrometry varies by more than two orders of magnitude fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bba07b7c1f0879f33030d52822edcb33
https://doi.org/10.1016/0925-9635(94)90246-1
https://doi.org/10.1016/0925-9635(94)90246-1
Autor:
Sezai Elagoz, Melanie W. Cole, H. S. Lee, W. H. Chang, R. P. Moerkirk, D. W. Eckart, S. N. Schauer, R. T. Lareau, Kenneth A. Jones, Roy Clarke, D. C. Fox, W. Vavra
Publikováno v:
Journal of Applied Physics. 72:4773-4780
The microstructure and electrical properties of nonalloyed epitaxial Au‐Ge contacts were studied. Ohmic behavior was obtained after a 3 h anneal at 320 °C with the lowest average contact resistance and specific contact resistivity found to be ∼0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c66e98dabfa8e8f4560971acd3664a3
https://doi.org/10.1063/1.352089
https://doi.org/10.1063/1.352089
Publikováno v:
Applied Physics Letters. 64:1094-1096
Phosphorus‐doped polycrystalline and homoepitaxial diamond films were grown using both microwave and dc plasma assisted chemical vapor deposition. P incorporation was quantified using secondary ion mass spectrometry, and was approximately ten times
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1de67aaf19e6f0bbe77d2ba310233d7b
https://doi.org/10.1063/1.110943
https://doi.org/10.1063/1.110943
Autor:
L. Calderon, H. S. Lee, L. W. Yang, R. P. Moerkirk, W. Y. Han, J. R. Flemish, Kenneth A. Jones, Yicheng Lu, S. N. Schauer
Publikováno v:
Applied Physics Letters. 62:2578-2580
Two heavily carbon doped InGaAs samples (2.20×1019 and 1.92×1019 cm−3) with low In mol fractions (1% and 8%) were annealed with or without silicon nitride caps in H2 containing 0.3% AsH3 over the temperature range 5000–800 °C. Hall effect, sec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c90ca0cb6a6fb74c9f91d1b3ad81a5e2
https://doi.org/10.1063/1.109302
https://doi.org/10.1063/1.109302
Autor:
R. P. Moerkirk, Melanie W. Cole, Yicheng Lu, S. N. Schauer, W. Y. Han, H. S. Lee, L. W. Yang, Kenneth A. Jones
Publikováno v:
Applied Physics Letters. 61:87-89
The hole concentrations and lattice mismatch with the GaAs substrate of heavily carbon‐doped epilayers (4.7×1019 and 9.8×1019 cm−3) were increased and the mobilities were decreased as compared with the as‐grown samples by rapid thermal anneal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c90b8b68c8f18cc4bcc8a987e001616a
https://doi.org/10.1063/1.107622
https://doi.org/10.1063/1.107622
Autor:
Li-Wu Yang, Yu Cun Lu, S. N. Schauer, Weiyu Han, Kenneth A. Jones, Robert P. Moerkirk, L. Calderon, H. S. Lee
Publikováno v:
SPIE Proceedings.
The hole carrier concentration of heavily carbon doped GaAs epilayers (4.7 X 1019 and 9.8 X 1019 cm-3) was increased and the mobility and lattice parameter were decreased by rapid thermal annealing silicon nitride capped samples at temperatures from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a9c06dfa0082b98c87f9cd62af24fa3
https://doi.org/10.1117/12.142933
https://doi.org/10.1117/12.142933
Autor:
Guillermo M. Loubriel, Wayne H. Chang, Charles D. Mulford, S. N. Schauer, Fred J. Zutavern, Robert J. Zeto, A. M. Balekdjian, R. T. Lareau
Publikováno v:
SPIE Proceedings.
A process was developed for the fabrication of high power GaAs photoconductive switches with ohmic Ni/Ge/Au contact metallization in a lateral NIN switch configuration. The main features of the process were ion implanted silicon in the contact region
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c525f32909e9e700d93ecb27ba23f443
https://doi.org/10.1117/12.59065
https://doi.org/10.1117/12.59065
Autor:
Sezai Elagoz, H. S. Lee, R. T. Lareau, Roy Clarke, S. N. Schauer, W. Va Vra, R. P. Moerkirk, Kenneth A. Jones
Publikováno v:
MRS Proceedings. 240
A SIMS backside sputter depth-profile technique using marker layers is employed to characterize the diffusion profiles of the Ge, As, and Au in the Au-Ge contacts after annealing at 320 C for various times. This technique overcomes difficulties such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6571c4e571ea21b83b91e4f01cc1da5e
https://doi.org/10.1557/proc-240-473
https://doi.org/10.1557/proc-240-473