Zobrazeno 1 - 10
of 65
pro vyhledávání: '"S. N. Rodin"'
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 86:817-819
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4c977f39730a20c40b80bcd981cc787
https://doi.org/10.3103/s1062873822070103
https://doi.org/10.3103/s1062873822070103
Publikováno v:
Semiconductors. 55:812-815
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec35fae1953033ba60010f1095ff336c
https://doi.org/10.1134/s1063782621100043
https://doi.org/10.1134/s1063782621100043
Publikováno v:
Semiconductors. 55:395-398
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bddc1e4744a9b53c8c3f4b72d032a6e2
https://doi.org/10.1134/s1063782621040035
https://doi.org/10.1134/s1063782621040035
Autor:
K. M. Morozov, I. V. Levitskii, M. A. Kaliteevski, A. V. Belonovskii, S. N. Rodin, V. P. Evtikhiev, Elizaveta I. Girshova, Konstantin A. Ivanov, Galia Pozina, M. I. Mitrofanov
Publikováno v:
Semiconductors. 54:127-130
The GaN planar hexagonal microcavities are grown by the selective vapor-phase epitaxy technique. The spectra are measured by the low-temperature cathodoluminescence method using a scanning electron microscope. The obtained spectra show a huge Rabi sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d33f49132869d0ab1146dacdaee50fb
https://doi.org/10.1134/s1063782620010042
https://doi.org/10.1134/s1063782620010042
Autor:
S. N. Rodin, A. V. Sakharov, G. V. Voznyuk, M. A. Kaliteevskii, A. F. Tsatsul’nikov, V. P. Evtikhiev, I. V. Levitskii, S. O. Usov, M. I. Mitrofanov, W. V. Lundin
Publikováno v:
Semiconductors. 53:2121-2124
The effect of annealing temperature and time on the luminescence intensity of the InGaN/GaN heterostructure subjected to ion beam etching was studied. We show that annealing at a temperature of 1100°C makes it possible to eliminate the radiation def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a50b1c58de65f4e6dbae1c7342d1ef2
https://doi.org/10.1134/s106378261912025x
https://doi.org/10.1134/s106378261912025x
Autor:
V. P. Evtikhiev, M. I. Mitrofanov, A. F. Tsatsul’nikov, W. V. Lundin, G. V. Voznyuk, M. A. Kaliteevski, S. N. Rodin
Publikováno v:
Semiconductors. 54:1682-1684
A new approach for calculating the ion dose spatial distribution of the focused ion beam is proposed. The approach is based on the analysis of the secondary electron microscopy image of the area irradiated by the focused ion beam.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fae3f811030fc2e6ccf8c1d9f597dab
https://doi.org/10.1134/s1063782620120246
https://doi.org/10.1134/s1063782620120246
Autor:
S. N. Rodin, N. D. Gruzinov, M. P. Shcheglov, Vasily N. Bessolov, V. N. Panteleev, E. V. Konenkova, M. E. Kompan
Publikováno v:
Technical Physics Letters. 46:382-384
Epitaxial aluminum nitride (AlN) layers on Si(111) substrates have been grown by sequential application of several techniques including reactive magnetron sputter deposition to a thickness of 20 nm, metalorganic vapor-phase epitaxy (MOVPE) to a total
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b76161dd1b1f6101705c80d997bc1c27
https://doi.org/10.1134/s1063785020040185
https://doi.org/10.1134/s1063785020040185
GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography
Autor:
S. O. Usov, A. F. Tsatsul’nikov, V. P. Evtikhiev, I. V. Levitskii, A. V. Sakharov, M. A. Kaliteevski, S. N. Rodin, M. I. Mitrofanov, W. V. Lundin
Publikováno v:
Physics of the Solid State. 61:2335-2337
A significant difference in the growth mechanism of spatially closed structures of gallium nitride during selective growth in submicron windows with and without penetration into the GaN sublayer was demonstrated. The mechanisms of generation and deve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61a1fa7f626864db5ac09c9a227cee54
https://doi.org/10.1134/s106378341912045x
https://doi.org/10.1134/s106378341912045x
Autor:
G. V. Voznyuk, M. I. Mitrofanov, W. V. Lundin, A. F. Tsatsul’nikov, V. P. Evtikhiev, S. N. Rodin
Publikováno v:
Semiconductors. 53:2100-2102
The work presents experimental data of Ga+ focused ion beam etching of disc and ring patterns in Si3N4/GaN structure. The reasons for the difference in etching depth between the discs and the rings are described.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f2a22f6ebd132a9d867ca3c5e8bd30a
https://doi.org/10.1134/s1063782619120170
https://doi.org/10.1134/s1063782619120170
Autor:
A. V. Sakharov, V. P. Evtikhiev, M. I. Mitrofanov, W. V. Lundin, G. V. Voznyuk, I. V. Levitskii, S. N. Rodin, A. F. Tsatsul’nikov
Publikováno v:
Semiconductors. 53:2118-2120
The effect of the growth temperature and the flow of trimethylgallium on the process of selective epitaxy of gallium nitride in windows of submicron size have been studied. The conditions under which homogeneous nucleation and coalescence of nuclei a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45cab5f9400a93d6f9334357584c3318
https://doi.org/10.1134/s1063782619120157
https://doi.org/10.1134/s1063782619120157