Zobrazeno 1 - 10
of 56
pro vyhledávání: '"S. N. Rodin"'
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 86:817-819
Publikováno v:
Semiconductors. 55:812-815
Publikováno v:
Semiconductors. 55:395-398
Autor:
S. N. Rodin, A. V. Sakharov, G. V. Voznyuk, M. A. Kaliteevskii, A. F. Tsatsul’nikov, V. P. Evtikhiev, I. V. Levitskii, S. O. Usov, M. I. Mitrofanov, W. V. Lundin
Publikováno v:
Semiconductors. 53:2121-2124
The effect of annealing temperature and time on the luminescence intensity of the InGaN/GaN heterostructure subjected to ion beam etching was studied. We show that annealing at a temperature of 1100°C makes it possible to eliminate the radiation def
Autor:
S. N. Rodin, N. D. Gruzinov, M. P. Shcheglov, Vasily N. Bessolov, V. N. Panteleev, E. V. Konenkova, M. E. Kompan
Publikováno v:
Technical Physics Letters. 46:382-384
Epitaxial aluminum nitride (AlN) layers on Si(111) substrates have been grown by sequential application of several techniques including reactive magnetron sputter deposition to a thickness of 20 nm, metalorganic vapor-phase epitaxy (MOVPE) to a total
GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography
Autor:
S. O. Usov, A. F. Tsatsul’nikov, V. P. Evtikhiev, I. V. Levitskii, A. V. Sakharov, M. A. Kaliteevski, S. N. Rodin, M. I. Mitrofanov, W. V. Lundin
Publikováno v:
Physics of the Solid State. 61:2335-2337
A significant difference in the growth mechanism of spatially closed structures of gallium nitride during selective growth in submicron windows with and without penetration into the GaN sublayer was demonstrated. The mechanisms of generation and deve
Autor:
G. V. Voznyuk, M. I. Mitrofanov, W. V. Lundin, A. F. Tsatsul’nikov, V. P. Evtikhiev, S. N. Rodin
Publikováno v:
Semiconductors. 53:2100-2102
The work presents experimental data of Ga+ focused ion beam etching of disc and ring patterns in Si3N4/GaN structure. The reasons for the difference in etching depth between the discs and the rings are described.
Autor:
A. V. Sakharov, V. P. Evtikhiev, M. I. Mitrofanov, W. V. Lundin, G. V. Voznyuk, I. V. Levitskii, S. N. Rodin, A. F. Tsatsul’nikov
Publikováno v:
Semiconductors. 53:2118-2120
The effect of the growth temperature and the flow of trimethylgallium on the process of selective epitaxy of gallium nitride in windows of submicron size have been studied. The conditions under which homogeneous nucleation and coalescence of nuclei a
Autor:
N. V. Seredova, S. N. Rodin, A. V. Solomnikova, T. A. Orlova, E. Konenkova, V. K. Smirnov, D. S. Kibalov, V. N. Bessolov, M. P. Shcheglov
Publikováno v:
Semiconductors. 53:989-992
Semipolar GaN layers synthesized on a nanostructured Si(100) substrate are studied. It is shown that using a Si(100) nanoprofile combined with SixNy nanostrips on top of nanostructures can yield, via metal-organic chemical-vapor deposition, GaN(10 $$
Autor:
M. I. Mitrofanov, V. P. Evtikhiev, A. F. Tsatsul’nikov, A. V. Sakharov, W. V. Lundin, S. O. Usov, S. N. Rodin, I. V. Levitskii
Publikováno v:
Semiconductors. 52:1357-1362
The selective epitaxial growth of GaN by metalorganic vapor-phase epitaxy combined with ion-beam etching is investigated. To this end, partially masked GaN epitaxial layers are fabricated by depositing a thin Si3N4 layer onto the surface in a single