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Microwave-radiation-induced structural transformations in homo- and heterogeneous GaAs-based systems
Publikováno v:
Technical Physics. 60:432-436
The effect of microwave irradiation (f = 2.45 GHz, 1.5 W/cm2, t = 1 or 2 min) on the reflectance and photoluminescence spectra of the epitaxial n-n+-GaAs and Au-n-n+-GaAs structures is studied. Short-term microwave irradiation is shown to cause long-