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Publikováno v:
Applied Physics Letters. 61:1066-1068
Experiments are described in which ∼0.2‐s‐wide argon laser pulses are incident on a 6‐μm‐thick n− Si epitaxial layer. Local melting and refreezing of both the layer and a small volume of the underlying p+ boron‐doped Si substrate occur
Autor:
S.F. Chu, M. Smadi, Werner A. Rausch, S. Ratanaphanyarat, J. O. Chu, S. N. Mei, Paul Ronsheim, M.J. Saccamango
Publikováno v:
IEEE Electron Device Letters. 12:261-263
Ion-implant doped polysilicon, in situ doped polysilicon, and in situ doped ultrahigh vacuum chemical vapor deposition (UHV/CVD) low-temperature epitaxial silicon emitter contacts were used to fabricate shallow junction vertical p-n-p transistors. Th
Publikováno v:
Archives of physical medicine and rehabilitation. 73(1)
Somatosensory evoked potentials elicited by stimulation of the lateral femoral cutaneous nerve were investigated in 20 able-bodied persons and 22 patients diagnosed clinically to have meralgia paresthetica. There was no statistically significant diff
Publikováno v:
Gaoxiong yi xue ke xue za zhi = The Kaohsiung journal of medical sciences. 7(2)
Moyamoya disease is a rare disorder in Taiwan. From 1984 to 1990, we documented 9 cases of Moyamoya disease, 5 from Kaohsiung Medical College Hospital, and 4 from Mackay Memorial Hospital. The average age was 34.2 years old, which is higher than comp
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Akademický článek
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Publikováno v:
Journal of Crystal Growth. 87:357-364
An attempt has been made to measure Mg clusters formed by the supersonic jet expansion from a heated crucible using the retarding potential technique. The experiment was performed in a typical ionized cluster beam (ICB) deposition system. With Mg dep
Autor:
Toh-Ming Lu, S.‐N. Mei
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 6:9-12
The design and testing of a high ionization efficiency source for a partially ionized beam deposition (PIBD) system are described. The vaporized material from a crucible is partially ionized at the crucible exit, where the vapor has its highest densi
Publikováno v:
Applied Physics Letters. 50:679-681
High Schottky barrier height of φb=0.77 eV for Al/n‐Si was obtained by the nozzle jet beam deposition method in a conventional vacuum condition without post‐annealing. Previously, this high barrier height was only observable in the vacuum cleave