Výsledky vyhledávání - "S. N. Knyazev"

Methods of dislocation structure characterization in AIIIBV semiconductor single crystals

Autor: S. N. Knyazev, A. V. Kudrya, N. Yu. Komarovskiy, Yu. N. Parkhomenko, E. V. Molodtsova, V. V. Yushchuk

Publikováno v: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 25:323-336

The development pace of advanced electronics raises the demand for semiconductor single crystals and strengthens the requirements to their structural perfection. Dislocation density and distribution pattern are most important parameters of semiconduc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::64f9a2929448e64b0bcc978f74d1b9b9
https://doi.org/10.17073/1609-3577-2022-4-323-336

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Effect of a Travelling Magnetic Field on the Parameters of Tellurium-Doped Gallium Arsenide Single Crystals Grown by the Czochralski Method

Autor: T. G. Yugova, V. A. Chuprakov, N. A. Sanzharovsky, A. A. Yugov, I. D. Martynov, S. N. Knyazev

Publikováno v: Crystallography Reports. 67:1099-1104

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::566dd36b5f72c721013770527c06b78a
https://doi.org/10.1134/s1063774522070495

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Formation of Facets in GaAs Crystals Doped with Sn and Te during the Growth by the Czochralski Method

Autor: T. G. Yugova, S. N. Knyazev, O. S. Pavlova

Publikováno v: Crystallography Reports. 67:323-326

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1ca6479abdcfc35584d0506d4e18d01a
https://doi.org/10.1134/s1063774522030245

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Comparison of the results of optical and electrophysical measurements of free electron density in n-GaAs samples doped with tellurium

Autor: V. E. Kanevskii, E. I. Kladova, S. N. Knyazev, T. G. Yugova, A. G. Belov

Publikováno v: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 24:27-33

A theoretical model has been developed that allows one to determine free electron density in n-GaAs from the characteristic points on far-infrared reflection spectra. It was shown that, in this case, it is necessary to take into account the plasmon-p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::152b4298906a440a56976f06c27f7fa2
https://doi.org/10.17073/1609-3577-2021-1-27-33

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Polycrystallinity in Gallium Arsenide Crystals Grown by the Czochralski Method

Autor: O. S. Pavlova, T. G. Yugova, S. N. Knyazev

Publikováno v: Crystallography Reports. 66:931-933

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::25cf932c4548c2b364966914ace5e54f
https://doi.org/10.1134/s1063774521060250

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Structural Features Associated with Twinning in the Growth of Gallium Arsenide Single Crystals by the Czochralski Method

Autor: T. G. Yugova, A. A. Yugov, S. N. Knyazev, B. V. Pugachev

Publikováno v: Crystallography Reports. 65:832-835

The structural features induced by twinning in tin- and tellurium-doped gallium arsenide crystals during their growth by the Czochralski method with liquid melt sealing by boric anhydride have been considered. It is shown that growth twins and edge f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d391e6e594e4c3eda34e23238e620ac5
https://doi.org/10.1134/s1063774520060413

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Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy

Autor: M. P. Dukhnovsky, P. A. Averichkin, T. G. Yugova, Yu. P. Kozlova, S. N. Knyazev, I. A. Belogorokhov, A. A. Donskov

Publikováno v: Semiconductors. 50:555-558

The results of using carbidsiliconoxide (a-C:SiO1.5) films with a thickness of 30–60 nm, produced by the pyrolysis annealing of oligomethylsilseskvioksana (CH3–SiO1.5)n with cyclolinear (staircased) molecular structure, as intermediate films in t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cf1aa61d9325a267f8fbba184d49acfb
https://doi.org/10.1134/s1063782616040047

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Effect of the Ti-Nanolayer Thickness on the Self-Lift-off of Thick GaN Epitaxial Layers

Autor: A. A. Yugov, S. N. Knyazev, Yu. P. Kozlova, M. P. Duhnovskii, S. S. Malahov, T. G. Yugova, I. A. Belogorokhov, A. A. Donskov

Publikováno v: Semiconductors. 50:411-414

The effect of the type of substrate, sapphire substrate (c- and r-orientation) or GaN/Al2O3 template (c- and r-orientations), on the nitridation of an amorphous titanium nanolayer is shown. The effect of the titanium-nanolayer thickness on thick GaN

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6149ff8dd6d9a61eb94c163543b6d533
https://doi.org/10.1134/s1063782616030246

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Study of the structural quality of GaN epitaxial layers obtained by hydride vapor phase epitaxy using a low-temperature buffer layer

Autor: A. A. Donskov, V. F. Pavlov, Yu. P. Kozlova, T. G. Yugova, S. N. Knyazev, I. A. Belogorohov

Publikováno v: Crystallography Reports. 60:889-894

The structural quality and surface morphology of low-temperature (LT) buffer layers after deposition and high-temperature (HT) annealing and HT GaN layers grown on LT buffer layers by hydride vapor phase epitaxy have been investigated. The HCl flow r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::977e9f2540559805ad3b1e3735dd6584
https://doi.org/10.1134/s1063774515060036

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Cryogenic Hardening Technology for Efficiency of Processing Tools Made of Х12МФ Steel

Autor: N A Kokorin, S N Knyazev, I S Trifonov, Yu O Mikhailov, V V Tarasov

Publikováno v: Bulletin of Kalashnikov ISTU. 20:23

Проведено сравнительное исследование абразивной износостойкости стали Х12МФ после упрочнения с использованием термической обработки �

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::16a6ba1f6a78e5be3654c64ac00cbc55
https://doi.org/10.22213/2413-1172-2017-4-23-25

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