Zobrazeno 1 - 10
of 48
pro vyhledávání: '"S. Myhajlenko"'
Publikováno v:
Microscopy of Semiconducting Materials, 1983
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40962dcc0a2b4e64cc381f61930bacf6
https://doi.org/10.1201/9781003069614-49
https://doi.org/10.1201/9781003069614-49
Autor:
A. S. Myhajlenko, Ju. A. Harchenko
Publikováno v:
Economic scope. :195-206
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::887c3daeeb2884b07c357c0cd438f179
https://doi.org/10.30838/p.es.2224.290818.194.221
https://doi.org/10.30838/p.es.2224.290818.194.221
Publikováno v:
Scanning. 30:310-316
The current semiconductor technology road map for device scaling champions a 4.5 nm gate length in production by 2022. The scanning electron microscope (SEM) as applied to critical dimensions (CD) metrology and associated characterization modes such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c680940b8b80a2458811fdefa0285ae
https://doi.org/10.1002/sca.20115
https://doi.org/10.1002/sca.20115
Publikováno v:
Philosophical Magazine B. 69:553-575
We report on a surface related study of the cathodoluminescence (CL) properties of high purity epitaxial GaAs. The nature of the surface has been modified by chemical passivation with (NH4)2S and by low-voltage electron beam charging. We have investi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f8ec0dbff7eeca325c3e6659d502977
https://doi.org/10.1080/01418639408240129
https://doi.org/10.1080/01418639408240129
Publikováno v:
Journal of The Electrochemical Society. 138:3120-3125
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81fb32f397f7e1bc9ba9a6702c9700a3
https://doi.org/10.1149/1.2085379
https://doi.org/10.1149/1.2085379
Publikováno v:
Scanning. 12:81-85
Extension in wavelength detection of cathodoluminescence (CL) toward the infrared is an area attracting interest regarding its development potential. This article describes our progress in CL characterization of Hg1−xCdxTe epilayers intended for op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71978415a52c21f1ffafbb59e0d21a4a
https://doi.org/10.1002/sca.4950120206
https://doi.org/10.1002/sca.4950120206
Autor:
B. Bunday, S. Myhajlenko, M. Pratt, J. A. Allgair, P. Boland, G. M. Laws, A. Handugan, H. Wang, T. Eschrich, S. Milicic
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25:102
The authors report on the realization of an enhanced process protocol for producing sub-20nm wide lines with extremely narrow pitches in electron beam resist using a low temperature development process. Linewidths ranging from 10to50nm with a pitch r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81f0c3e4ea864d06f96e90a2e19fb15f
https://doi.org/10.1116/1.2426976
https://doi.org/10.1116/1.2426976
Autor:
P. Boland, T. Eschrich, Christian D. Poweleit, G. M. Laws, A. Handugan, S. Myhajlenko, C. Sinclair
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25:2059
The authors report on the top-down fabrication of silicon nanopillar arrays using electron beam lithography and enhanced plasma etch protocols for producing smoothed sidewalls. They have used cold development (2–4°C) to minimize line edge roughnes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6a3700985b405304a3530eaee7fd048
https://doi.org/10.1116/1.2781514
https://doi.org/10.1116/1.2781514
Autor:
S. Myhajlenko
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 49:840-841
Brillson and Vitturo have recently reviewed the application of low energy (300 - 3000 eV) cathodoluminescence (CL) to surface studies of various semiconductors. In principle, the resulting electron penetration (40 - 1500 Å) at these energies should
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::037343f67d6f878b1c30e3f29b27e7f4
https://doi.org/10.1017/s0424820100088518
https://doi.org/10.1017/s0424820100088518
Publikováno v:
Journal of Applied Physics. 54:862-867
A preliminary report is given of dramatic changes observed in the cathodoluminescence (CL) properties of silicon melted under vacuum by electron beam excitation. The band edge luminescence is found to be modified and enhanced in the recrystallized ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c1c6061b6580087195a1be431721bf5
https://doi.org/10.1063/1.332028
https://doi.org/10.1063/1.332028