Výsledky vyhledávání

Akademický článek

Design and Analysis of Printed Square Loop Antenna and Solenoidal Loop Antenna for Pill Shaped Bio-implants Object

Autor: S. Mutashar

Publikováno v: Engineering and Technology Journal, Vol 35, Iss 1A, Pp 9-15 (2017)

This paper deals to design and investigated two proposed loop antenna for pill shaped bio-implants objects such as wireless capsule endoscopy. In additional it’s help in developing an understanding of how the fields decay with distance. The first p

Externí odkaz: https://doaj.org/article/38f6d3a8503847fa8a2c07111ddacd83

Zobrazit plný text záznamu

Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration

Autor: Klaus Hempel, S. Mutas, Kornelia Dittmar, J. K. Schaeffer, V. Jaschke, Dina H. Triyoso, Markus Lenski, Susanne Ohsiek, J. Shu, Dirk Utess

Publikováno v: ECS Journal of Solid State Science and Technology. 2:N222-N227

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b7ba90586c3efd67f8ffff7699ca61a4
https://doi.org/10.1149/2.022311jss

Zobrazit plný text záznamu

Investigation of the analysis parameters and background subtraction for high-k materials with atom probe tomography

Autor: S.S.A. Gerstl, S. Mutas, C. Klein

Publikováno v: Ultramicroscopy. 111:546-551

In this paper we present depth profiles of a high-k layer consisting of HfO(2) with an embedded sub-nm thick ZrO(2) layer obtained with atom probe tomography (APT). In order to determine suitable measurement parameters for reliable, reproducible, and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc9647aa1e74f6bed16ffdba34a4c8ef
https://doi.org/10.1016/j.ultramic.2010.12.028

Zobrazit plný text záznamu

Physical and Electrical Properties of MOCVD and ALD Deposited HfZrO4 Gate Dielectrics for 32nm CMOS High Performance Logic SOI Technologies

Autor: Rolf Stephan, Lutz Wilde, M. Weisheit, Lutz Herrmann, Alexander Wuerfel, Walter Hansch, Torben Kelwing, Hartmut Prinz, Bernhard Trui, Christoph Klein, Inka Richter, Rick Carter, Peter Kücher, S. Mutas, Falk Graetsch, Martin Trentzsch, Susanne Ohsiek, Anita Peeva, Andreas Naumann

Publikováno v: ECS Transactions. 33:3-14

Future scaling of complementary metal oxide semiconductor (CMOS) technology requires high-k (HK) dielectrics with metal gate (MG) electrodes to realize higher gate capacitances and low gate leakage currents [1]. During the last decade the semiconduct

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f183ab8e314b3efbdf19c02cd2021381
https://doi.org/10.1149/1.3481586

Zobrazit plný text záznamu

Comparison of MOCVD- and ALD-Deposited $ \hbox{HfZrO}_{4}$ Gate Dielectrics for 32-nm High-Performance Logic SOI CMOS Technologies

Autor: Martin Trentzsch, Bernhard Trui, Rolf Stephan, Walter Hansch, Lutz Herrmann, Torben Kelwing, Andreas Naumann, Falk Graetsch, S. Mutas, Rick Carter, Peter Kücher

Publikováno v: IEEE Electron Device Letters. 31:1149-1151

For the first time, HfZrO4 dielectrics deposited with metal-organic chemical vapor deposition (MOCVD) as well as atomic layer deposition (ALD) have been investigated as high-k gate dielectric for 32-nm high-performance logic SOI complementary metal-o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::73c985450aaae8f418252fd76e5ba623
https://doi.org/10.1109/led.2010.2059693

Zobrazit plný text záznamu

Robust PEALD SiN spacer for gate first high-k metal gate integration

Autor: S. Mutas, J. K. Schaeffer, Dina H. Triyoso, Klaus Hempel, Markus Lenski, J. Shu, V. Jaschke

Publikováno v: ICICDT

As we packed more and more transistors into one chip and as the size of transistor continues to shrink, the need for conformal sidewall protection layer becomes critical. In this work improved device properties is demonstrated using PEALD SiN spacer

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5da1c734b69608b8c907acb027756875
https://doi.org/10.1109/icicdt.2012.6232870

Zobrazit plný text záznamu

Investigations of field-evaporated end forms in voltage- and laser-pulsed atom probe tomography

Autor: K. Wedderhoff, S. Teichert, S.S.A. Gerstl, A. Shariq, C. Klein, S. Mutas, P. Kücher, H. Hortenbach

Publikováno v: Ultramicroscopy. 109(5)

Atom Probe Tomography (APT) consists of analyzing a needle-shaped specimen on an atom-by-atom basis. In recent years, instruments have become commercially available, enabling the sequential analysis of the same specimen in both laser- and voltage-pul

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::022b771bfc232591d63cb03660f905c7
https://pubmed.ncbi.nlm.nih.gov/19062187

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání