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pro vyhledávání: '"S. Moinian"'
Akademický článek
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Akademický článek
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Autor:
C.A. King, D.A. Rich, K. Ng, M.R. Frei, S. Moinian, A.S. Chen, V.D. Archer, J. De Blauwe, Hong-Ha Vuong, Marco Mastrapasqua, Tony Ivanov, M.S. Carroll, Edward B. Harris
Publikováno v:
IEEE Microwave Magazine. 3:44-55
As process technology advances, we will see SoC systems with millions of digital gates combined with RF circuits operating in the tens of GHz.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9ccb845b21a544d7adbbc1d2b2a1da4
https://doi.org/10.1109/mmw.2002.1004051
https://doi.org/10.1109/mmw.2002.1004051
Publikováno v:
IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing. 47:274-286
The design of the radio frequency (RF) section in a communication integrated circuit (IC) is a challenging problem. Although several computer-aided analysis tools are available for RFIC design, they are not effectively used, because there is a lack o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29656d28c42792d4ac7216d379b0c980
https://doi.org/10.1109/82.839663
https://doi.org/10.1109/82.839663
Autor:
Xiaochong Cao, K. Stiles, S. Moinian, Paul Arthur Layman, Juin J. Liou, J. McMacken, A. Oritz-Conde
Publikováno v:
IEEE Transactions on Electron Devices. 47:427-433
A new bipolar transistor model called VBIC has recently been developed and is likely to replace the Gummel-Poon model as the new industry standard bipolar transistor model. This paper focuses on the comparison of the VBIC and Gummel-Poon models under
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::553b14c903722f84a54d0eb4ee9c7add
https://doi.org/10.1109/16.822290
https://doi.org/10.1109/16.822290
Autor:
L.F. Wagner, D.F. Bowers, Colin C. McAndrew, S. Moinian, J. Parker, I. Getreu, M. Dunn, M. Foisy, M. McSwain, P.J. van Wijnen, J.A. Seitchik, D.J. Roulston, Michael Schroter
Publikováno v:
IEEE Journal of Solid-State Circuits. 31:1476-1483
This paper details the VBIC95 bipolar junction transistor (BJT) model. The model was developed as an industry standard replacement for the SPICE Gummel-Poon (SGP) model, to improve deficiencies of the SGP model that have become apparent over time bec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1907458351df3ae9bb533dbbe2b518e
https://doi.org/10.1109/4.540058
https://doi.org/10.1109/4.540058
Publikováno v:
IEEE Journal of Solid-State Circuits. 31:4-9
Rectangular spiral inductors with Q's as high as 12 have been built in a high-speed complementary bipolar process and characterized for use in wireless applications. An accurate broadband model has been developed for the inductors, and a test filter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e40eb558463e4d055b19052e12cc768
https://doi.org/10.1109/4.485838
https://doi.org/10.1109/4.485838
Akademický článek
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Autor:
D. Farrell, S. Moinian, K. Goverdhanam, E.W. Lau, M. Frei, J. Lott, S. Perelli, D.A. Bell, R. Li, W. Dai, J. Zell
Publikováno v:
2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).
This paper focuses on the package model extraction methodology and large signal model verification of high power RF LDMOS amplifiers. Results validating the extracted package models are presented. Accurate models of the power amplifier that also allo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23113098dcf12ecc082428632a517745
https://doi.org/10.1109/mwsym.2004.1339169
https://doi.org/10.1109/mwsym.2004.1339169
Autor:
Michel Ranjit Frei, M.R. Pinto, N.R. Belk, Tony Ivanov, W. Lin, V.D. Archer, D.C. Dennis, S. Moinian, J. Chu, K.K. Ng, M.S. Carroll
Publikováno v:
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
Inductors fabricated using CMOS technologies based on epi/p/sup +/ substrates are severely degraded because of eddy current losses in the substrate. We propose and demonstrate a modified substrate structure, which addresses the conflicting goals of h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e10d44b8490d62aa5bfbd3d3365f27c3
https://doi.org/10.1109/iedm.1999.824261
https://doi.org/10.1109/iedm.1999.824261