Zobrazeno 1 - 10
of 476
pro vyhledávání: '"S. Mesters"'
Autor:
C. Schmidt, Andrey Legin, B.L. Seleznev, Peter Kordos, S Mesters, Hans Lüth, Michael J. Schöning, Willi Zander, Jürgen Schubert, Yu. G. Vlasov
Publikováno v:
Sensors and Actuators B: Chemical. 68:254-259
Potentiometric thin film sensors on the basis of the two different chalcogenide glass materials Ag-As-S and Cu-Ag-As-Se-Te have . been prepared by means of the pulsed laser deposition PLD technique onto SirSiO substrates with an additional contact la
Publikováno v:
Microelectronic Engineering. 50:243-248
Recent band structure calculations indicate, that ruthenium silicide (Ru2Si3) is semiconducting with a direct band gap. Electrical measurements lead to a band gap around 0.8 eV which is technologically important for fiber communications. This makes R
Publikováno v:
Solid-State Electronics. 43:1091-1094
Nanometer patterning of single crystalline CoSi2 layers on Si(100) by local oxidation was studied. Epitaxial CoSi2 layers with thicknesses around 20 nm were grown on Si(100) by molecular beam allotaxy. A nitride layer was deposited on the surface of
Autor:
H. Kibbel, Ralf Liedtke, H.-J. Herzog, Thomas Hackbarth, S. Mantl, S. Mesters, Bernhard Holländer
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 147:29-34
We propose a new method to fabricate strain relaxed high quality Si1−xGex layers on Si by hydrogen implantation and thermal annealing. Hydrogen implantation is used to form a narrow defect band slightly below the SiGe/Si interface. During subsequen
Autor:
H. Kibbel, Bernhard Holländer, S. Mesters, S. Mantl, H.-J. Herzog, Ralf Liedtke, Thomas Hackbarth
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 148:200-205
We studied strain relaxation of pseudomorphic Si 1− x Ge x layers on Si(1 0 0) after hydrogen implantation and thermal annealing. Hydrogen implantation induces a narrow defect band slightly below the SiGe/Si interface giving rise to strongly enhanc
Publikováno v:
Journal of Luminescence. 80:461-465
Recent band structure calculations indicate that ruthenium silicide (Ru 2 Si 3 ) is semiconducting with a direct band gap. Electrical measurements lead to a band gap around 0.8 eV which is technologically important for fiber communications. This make
Publikováno v:
Thin Solid Films. 321:251-255
In this paper we present recent investigations on the growth of buried single crystalline CoSi2 layers in Si(100) by molecular beam allotaxy. By this growth method the layer formation takes place during a rapid high temperature anneal of silicide pre
Publikováno v:
Thin Solid Films. 318:163-167
We have investigated the thermal oxidation of epitaxial CoSi 2 on Si(111). The epitaxial layers were grown by molecular beam allotaxy with thicknesses ranging from 30 to 40 nm. Similar to the well established technology for local oxidation of silicon
Autor:
S. Mesters, S. Mantl, W. Michelsen, Bernd Kabius, Bernhard Holländer, M. Hacke, D. Guggi, U. Tisch
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :324-327
Single crystalline metal/silicon heterostructures, such as CoSi 2 on Si (100), are promising materials for microelectronic and optoelectronic applications. The crystalline perfection of epitaxial CoSi 2 /Si (100) heterostructures is limited by the la
Publikováno v:
Thin Solid Films. 292:213-217
Strain and misfit dislocation density in small-area Si 1− x Ge x filmsgrown by selective low-pressure chemical vapour deposition on Si (100)have been investigated as a function of lateral size by Rutherford backscattering spectrometry, ion channeli