Výsledky vyhledávání

Above 16% efficient sequentially grown Cu(In,Ga)(Se,S)2 -based solar cells with atomic layer deposited Zn(O,S) buffers

Autor: Iver Lauermann, Thomas Walter, Frank Hergert, Max Klingsporn, Rutger Schlatmann, S. Merdes, Sebastian S. Schmidt, Florian Ziem, Tetiana Lavrenko

Publikováno v: Progress in Photovoltaics: Research and Applications. 23:1493-1500

We report the development of Cd-free buffers by atomic layer deposition for chalcopyrite-based solar cells. Zn(O,S) buffer layers were prepared by atomic layer deposition on sequentially grown Cu(In,Ga)(Se,S)2 absorbers from Bosch Solar CISTech GmbH.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c56f810d0d1cb3b55c7ca77fbaf9a19b
https://doi.org/10.1002/pip.2579

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Influence of Cu(In,Ga)(Se,S)2 surface treatments on the properties of 30×30cm2 large area modules with atomic layer deposited Zn(O,S) buffers

Autor: Frank Hergert, Alexander Steigert, Florian Ziem, Rutger Schlatmann, Christian A. Kaufmann, S. Merdes, Reiner Klenk, Iver Lauermann

Publikováno v: Thin Solid Films. 574:28-31

We report the effect of Cu(In,Ga)(Se,S) 2 absorber surface treatments on the properties of atomic layer deposited-Zn(O,S) buffered 30 × 30 cm 2 large area modules. The absorber is prepared by the sequential process. H 2 O and KCN solution treatments

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8be2180cd9d395348419d0d38473589b
https://doi.org/10.1016/j.tsf.2014.11.049

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Zn(O,S) buffer prepared by atomic layer deposition for sequentially grown Cu(In,Ga)(Se,S)2 solar cells and modules

Autor: S. Merdes, Rutger Schlatmann, Frank Hergert, M. Schüle, N. Papathanasiou, Iver Lauermann, V. Malinen, Florian Ziem, Frederick C. Stober

Publikováno v: Solar Energy Materials and Solar Cells. 126:120-124

A sustainable development of the chalcopyrite thin film technology requires the replacement of CdS buffer layer by environment friendly materials. Alternative buffers such as Zn(O,S) and In 2 S 3 have already been successfully developed and led to ef

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::82fca9854e10e8e8d54f813fd5f6e9a0
https://doi.org/10.1016/j.solmat.2014.03.044

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CdS/Cu(In,Ga)S2based solar cells with efficiencies reaching 12.9% prepared by a rapid thermal process

Autor: Martha Ch. Lux-Steiner, S. Merdes, H.-W. Schock, A. Meeder, Roland Mainz, Joachim Klaer, Reiner Klenk, Daniel Abou-Ras

Publikováno v: Progress in Photovoltaics: Research and Applications. 21:88-93

In this letter, we report externally confirmed total area efficiencies reaching up to 12.9% for CdS/Cu(In,Ga)S2 based solar cells. These are the highest externally confirmed efficiencies for such cells. The absorbers were prepared from sputtered meta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::76a6e165def85b4802c6549d6e8fb602
https://doi.org/10.1002/pip.2165

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Influence of precursor stacking on the absorber growth in Cu(In,Ga)S2 based solar cells prepared by a rapid thermal process

Autor: H. Rodriguez-Alvarez, H.-W. Schock, M. Ch. Lux-Steiner, Roland Mainz, Reiner Klenk, Joachim Klaer, S. Merdes, A. Meeder

Publikováno v: Thin Solid Films. 519:7189-7192

Rapid thermal sulfurization of metallic precursors has proven to be a successful method for the preparation of Cu(In,Ga)S 2 based solar cells. However, during the sulfurization, several problems can be encountered. Due to the difference in reaction r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9163c14dc02b48a3eea727a9e23a5248
https://doi.org/10.1016/j.tsf.2011.01.397

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Development of CuInS2-based solar cells and modules

Autor: H. Rodriguez-Alvarez, H.-W. Schock, Roland Scheer, Roland Mainz, Reiner Klenk, S. Merdes, Joachim Klaer, Ch. Köble

Publikováno v: Solar Energy Materials and Solar Cells. 95:1441-1445

Starting from a small area cell published in 1993, CuInS2 technology has been continuously improved with respect to performance and manufacturability. Major milestones include successful preparation by rapid thermal processing, a monolithically integ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::96fc34a8cea696afe2757803bd437d60
https://doi.org/10.1016/j.solmat.2010.11.001

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Effects of Na on the properties of Cu(In,Ga)S2 solar cells

Autor: Yasuhiro Satake, S. Merdes, K. Ban, Ryuji Kaigawa, Reiner Klenk

Publikováno v: Thin Solid Films. 519:5535-5538

We have prepared Cu(In,Ga)S 2 solar cells with changing Na concentration using several preparation methods. We have investigated the hole density and solar cell properties. The hole density increases with increasing Na concentration up to 10 17 cm �

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::da3412c4d50dc8afcaaffe75673bfce1
https://doi.org/10.1016/j.tsf.2011.02.044

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12.6% efficient CdS/Cu(In,Ga)S2-based solar cell with an open circuit voltage of 879mV prepared by a rapid thermal process

Autor: H.-W. Schock, M. Ch. Lux-Steiner, Roland Mainz, S. Merdes, H. Rodriguez-Alvarez, Reiner Klenk, Joachim Klaer, A. Meeder

Publikováno v: Solar Energy Materials and Solar Cells. 95:864-869

A Cu(In,Ga)S 2 -based solar cell with a confirmed efficiency of 12.6% together with an open circuit voltage of 879 mV, prepared from sputtered metals subsequently sulfurized using rapid thermal processing in sulfur vapor, is reported. The performance

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::68a4186c22cfd15185bb94567502db05
https://doi.org/10.1016/j.solmat.2010.11.003

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Photoelectric characterization of Cu(In,Ga)S2 solar cells obtained from rapid thermal processing at different temperatures

Autor: J. Ohland, Jan Keller, Juergen Parisi, Ingo Riedel, Martin Knipper, Julia Riediger, Roland Mainz, S. Merdes

Publikováno v: Solar Energy Materials and Solar Cells. 95:270-273

CuInS2-based solar cells have a strong potential of achieving high efficiencies due to their ideal band gap of 1.5 eV. A further increase in the efficiency is expected from doping the absorber film with gallium due to enlargement of the band gap (Eg)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a0e727efc5d6cdc695916dc020c9a120
https://doi.org/10.1016/j.solmat.2010.05.013

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