Zobrazeno 1 - 10
of 52
pro vyhledávání: '"S. Marthon"'
Publikováno v:
Applied Surface Science. 253:21-27
X-ray reflectivity (XRR), X-ray fluorescence (XRF) and small angle X-ray scattering (SAXS) techniques are used to the monitoring of Cu/porous low κ processes, which are developed for the next generation (≤65 nm) integrated circuits. Sensitivity of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a043134e01dab382edb761f8f4527fce
https://doi.org/10.1016/j.apsusc.2006.05.123
https://doi.org/10.1016/j.apsusc.2006.05.123
Autor:
L. Perino-Gallice, I. Mazor, J.‐P. Gonchond, C. Wyon, L. Kwakman, D. Delille, D. Muyard, S. Marthon, A. Michallet, A. Tokar, F. Heider, J.C. Royer
Publikováno v:
Thin Solid Films. 450:84-89
Accurate and reliable in-line monitoring of the different films thickness that occur throughout the integrated circuit manufacturing process is mandatory to develop and produce advanced microelectronic devices. X-ray reflectivity (XRR) is a fundament
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0dd60ac9ff165538f6868b8df595cf7
https://doi.org/10.1016/j.tsf.2003.10.159
https://doi.org/10.1016/j.tsf.2003.10.159
Autor:
J.-F. Damlencourt, D. Samour, O. Renault, C. Leroux, M. N. Séméria, S. Marthon, A.M. Papon, François Martin, X. Garros
Publikováno v:
Solid-State Electronics. 47:1613-1616
In this paper, we have correlated electrical measurements of thin HfO2 layers deposited on SiO2 by atomic layer deposition with angle-resolved X-ray photoelectron spectroscopy experiments. Results show that the HfO2/Si interface layer (IL) is made of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0162115a715465a2f31960d3c5ee8fd9
https://doi.org/10.1016/s0038-1101(03)00170-9
https://doi.org/10.1016/s0038-1101(03)00170-9
Publikováno v:
Solid State Phenomena. 92:105-108
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::684574528f66f483a8bfaee2c84b52e6
https://doi.org/10.4028/www.scientific.net/ssp.92.105
https://doi.org/10.4028/www.scientific.net/ssp.92.105
Publikováno v:
Thin Solid Films. 428:190-194
Ultra-thin (1–8 nm) HfO2 films, grown on both chemical and thermal SiO2/Si surfaces by atomic layer deposition, were characterized in terms of interface properties by angle-resolved X-ray photoelectron spectroscopy (ARXPS), high-resolution transmis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fd9de8685dc859f5ac5d4f3b3bf5d05
https://doi.org/10.1016/s0040-6090(02)01198-7
https://doi.org/10.1016/s0040-6090(02)01198-7
Publikováno v:
Surface and Interface Analysis. 33:433-436
Knowledge of silicon oxide layer thickness and stoichiometry is essential for the integration of new dielectric materials. Among the various ways of obtaining ultrathin silicon oxides, chemically grown oxides are a promising choice. Different cleanin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20c3f66340efa2f2e6d98a9cb0e17c9f
https://doi.org/10.1002/sia.1230
https://doi.org/10.1002/sia.1230
Autor:
Marc Juhel, Névine Rochat, Agnes Roche, Michel Olivier, S. Marthon, F. Tardif, J. F. Ple, Adrien Danel
Publikováno v:
Solid State Phenomena. :111-114
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e77d2b113370223960f8e3d371d1dbec
https://doi.org/10.4028/www.scientific.net/ssp.76-77.111
https://doi.org/10.4028/www.scientific.net/ssp.76-77.111
Publikováno v:
Surface and Interface Analysis. 23:137-147
The surface charge spectroscopy (SCS) method investigated by x-ray photoelectron spectroscopy is used with structures such as semiconductors covered with a thin dielectric layer to estimate the electrical quality of the dielectric film and to determi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ee121a81dd08f144701597868e3c9f7
https://doi.org/10.1002/sia.740230304
https://doi.org/10.1002/sia.740230304
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 67:409-416
Surface charge spectroscopy (SCS) is investigated by X-ray photoelectron spectroscopy (XPS) and the results are compared with C(V) and G(V) low frequency density of states data obtained on MOS capacitors, performed using a SILO/RTN (sealed interface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a191e76ec0fe2b7d6b631d34e56b5654
https://doi.org/10.1016/0368-2048(93)02042-k
https://doi.org/10.1016/0368-2048(93)02042-k
Publikováno v:
Thin Solid Films. 239:220-224
In order to determine the best chemical surface state of a polyimide (PI) sample to obtain good metal polymer adhesion, the chemical changes occuring on the PI surface following different treatments were studied by X-ray photoelectron spectroscopy. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7be58147e23b6523df800b624507d0af
https://doi.org/10.1016/0040-6090(94)90855-9
https://doi.org/10.1016/0040-6090(94)90855-9