Zobrazeno 1 - 10
of 73
pro vyhledávání: '"S. Manakli"'
Autor:
D. Galpin, Alexis Farcy, E. Richard, P. Brun, G. Imbert, Jonathan Pradelles, Vincent Jousseaume, M. Assous, B. Icard, Daniel Barbier, C. Jayet, C. Monget, Sonarith Chhun, Michel Haond, Sylvain Maitrejean, Vincent Arnal, J. Guillan, S. Manakli, K. Hamioud, Aziz Zenasni
Publikováno v:
Microelectronic Engineering. 87:316-320
A 32nm node BEOL integration scheme is presented with 100nm metal pitch at local and intermediate levels and 50nm via size through a M1-Via1-M2 via chain demonstrator. To meet the 32nm RC performance specifications, extreme low-k (ELK) porous SiOCH k
Autor:
J. Todeschini, B. Icard, S. Manakli, M. Jurdit, Laurent Pain, Blandine Minghetti, S. Leseuil, K. Docherty
Publikováno v:
Japanese Journal of Applied Physics. 45:6462-6467
Summary form only given. After the last successful results obtained these last years, EBDW (E-beam direct write) use for ASIC manufacturing is now demonstrated. However, throughput and resolution capabilities need to be improved to push its interest
Publikováno v:
Microelectronic Engineering. 83:749-753
The electron beam direct write (EBDW) lithography solution is already mature enough to be used for semiconductor manufacturing. This paper illustrates the potential of EBDW to support technology development as a patterning technique complementary to
Autor:
S. Manakli, J. Todeschini, Laurent Pain, Peter Hahmann, Yves Laplanche, M. Jurdit, Ulf Weidenmueller, Daniel Henry
Publikováno v:
Microelectronic Engineering. :16-21
Electron beam direct write (EBDW) promises a good solution in lithography applications, where standard optical lithography is not suitable. With shrinking dimensions in semiconductor technologies the overlay capability for the lithography has to be e
Autor:
Patrick Schiavone, Pierre-Jerome Goirand, S. Manakli, Yorick Trouiller, P. Spinelli, Yves Rody, O. Le-Borgne, J.-P. Chollet
Publikováno v:
Microelectronic Engineering. :123-132
In optical lithography, the use of multiple focal planes with different energy and focus improves the photolithography performances like the Depth of Focus (DOF) and the Energy Latitude (EL). We have chosen to use a symmetrical double exposure (symme
Publikováno v:
Lithography
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d91343b4a98eed3a19d8d5e0f47d42a0
https://doi.org/10.1002/9781118557662.ch3
https://doi.org/10.1002/9781118557662.ch3
Autor:
Jerome Belledent, Luc Martin, Sébastien Bayle, Pablo Wiedemann, Abdi Farah, Patrick Schiavone, S. Manakli, Sébastien Soulan
Publikováno v:
Alternative Lithographic Technologies IV.
Lithography faces today many challenges to meet the ITRS road-map. 193nm is still today the only existing industrial option to address high volume production for the 22nm node. Nevertheless to achieve such a resolution, double exposure is mandatory f
Autor:
Luc Martin, Manuela Gutsch, Patrick Schiavone, Sébastien Bayle, Kang-Hoon Choi, Martin Freitag, Christoph Hohle, S. Manakli
Publikováno v:
SPIE Proceedings.
A new correction approach was developed to improve the process window of electron beam lithography and push its resolution at least one generation further using the same exposure tool. An efficient combination of dose and geometry modulation is imple
Autor:
Sébastien Bayle, Jonathan Pradelles, S. Manakli, Luc Martin, J. Bustos, Kang-Hoon Choi, Manuela Gutsch
Publikováno v:
Alternative Lithographic Technologies III.
Electron Beam Direct Write (EBDW) lithography is used in the IC manufacturing industry to sustain optical lithography for prototyping applications and low volume manufacturing. It is also used in R&D to develop advanced technologies, ahead of mass pr
Autor:
S. Manakli, B. Icard, Regis Orobtchouk, Jonathan Pradelles, Luc Martin, Laurent Pain, A. Poncet
Publikováno v:
SPIE Proceedings.
Electron Beam Direct Write lithography is used in the IC manufacturing industry to sustain optical lithography for prototyping applications and low volume manufacturing. It is also used in R&D to develop the technological nodes ahead of mass producti