Zobrazeno 1 - 6
of 6
pro vyhledávání: '"S. Mahaboob Jilani"'
Autor:
S. Mahaboob Jilani, N. Ravi, T. Subba Rao, Cs. Dwaraka Viswanath, Venkata Krishnaiah Kummara, G. Neelima, M. Ravi Prakash
Publikováno v:
Optical Materials. 94:436-443
Holmium (Ho3+) -doped bismuth-germanate glasses with the chemical combination of (40-x) GeO2 + 20 Bi2O3 + 20 Na2O + 10 Gd2O3 + 10 BaO + x Ho2O3 (x = 0.1, 0.5, 1.0, 1.5 and 2.5) have been prepared by melt-quenching method. These glasses were character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6c1fb302e0e13729d70be7bdefa7c89
https://doi.org/10.1016/j.optmat.2019.05.003
https://doi.org/10.1016/j.optmat.2019.05.003
Publikováno v:
Carbon. 64:187-196
We report semiconductor-based resistive switching nonvolatile memory devices with graphene oxide (GO) as an active layer which is sandwiched between aluminum (Al) metal and semiconductors such as Si and Ge. Semiconductors (p-Si or p-Ge) are used as b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72885d60e49e7b5e016e85a315fed248
https://doi.org/10.1016/j.carbon.2013.07.051
https://doi.org/10.1016/j.carbon.2013.07.051
Publikováno v:
Langmuir. 28:16485-16489
Graphene oxide (GO) and graphene oxide-zinc oxide nanocomposites (GO-ZnO) were used as channel materials on SiO(2)/Si to fabricate thin-film transistors (TFT) with an aluminum source and drain. Pure GO-based TFT showed poor field-effect characteristi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e753257ba7435833040e14050249133
https://doi.org/10.1021/la303554z
https://doi.org/10.1021/la303554z
Autor:
Pallab Banerji, S. Mahaboob Jilani
Publikováno v:
ACS applied materialsinterfaces. 6(19)
The effects of ZnO on graphene oxide (GO)-ZnO nanocomposites are investigated to tune the conductivity in GO under field effect regime. Zinc oxides with different concentrations from 5 wt % to 25 wt % are used in a GO matrix to increase the conductiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1c618bea72b2810fccf77770891a2fa
https://pubmed.ncbi.nlm.nih.gov/25199448
https://pubmed.ncbi.nlm.nih.gov/25199448
Autor:
Pallab Banerji, S. Mahaboob Jilani
Publikováno v:
Physics of Semiconductor Devices ISBN: 9783319030012
Reduced graphene oxide based composites filled with metal oxide nanoparticles are emerging as active materials in transistor applications. Here we report fabrication of transistors on poly methyl methacrylate (PMMA) dielectric using graphene oxide-Zn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcbf5c8709b0c63c02a328d98b6bb409
https://doi.org/10.1007/978-3-319-03002-9_156
https://doi.org/10.1007/978-3-319-03002-9_156
Kniha
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.