Zobrazeno 1 - 10
of 17
pro vyhledávání: '"S. M. Sattari-Esfahlan"'
Publikováno v:
ACS Applied Electronic Materials. 3:3418-3427
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a2a2b91700db0d582a021a91c245179
https://doi.org/10.1021/acsaelm.1c00396
https://doi.org/10.1021/acsaelm.1c00396
Autor:
Chang-Hyun Kim, S. M. Sattari-Esfahlan
Publikováno v:
ACS Applied Nano Materials. 4:6542-6556
There is an increasing importance of memory technologies in our ever-digitalizing society, which is characterized by the generation and use of a tremendous amount of real-time data. Beyond traditional performance requirements, mechanical flexibility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d72223968da37d9967db8a0fd03d5252
https://doi.org/10.1021/acsanm.1c01523
https://doi.org/10.1021/acsanm.1c01523
Publikováno v:
ChemPhysChem. 22:1706-1711
Organic semiconductors are highly interface-sensitive, and therefore chemical functionalization using self-assembled monolayers (SAMs) is often adopted to tailor their properties. This study clarifies the synergistic effects of electrode and dielectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b18118e5fe9625e91111b1880e512a2b
https://doi.org/10.1002/cphc.202100261
https://doi.org/10.1002/cphc.202100261
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:1641-1649
Within the approach based on chemical modification of domain boundaries of polycrystalline graphene, a transistor channel is proposed for enhanced current modulation, Ion/Ioff ratio, in the 3 to 5 order of magnitude. We observed that two types of sam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c51f003bf0c432bb5f530f5e5f1a962f
https://doi.org/10.1007/s10854-020-04933-z
https://doi.org/10.1007/s10854-020-04933-z
Publikováno v:
Journal of Optical Communications. 40:379-384
In this paper, we proposed optical filter based on two-dimensional photonic crystal elliptical channel for wavelength division multiplexing. We employed ring resonator with ellipse shaped core in proposed structure. The resonance wavelength of the ri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c04281c36c340bccd5d3add1f7c877cf
https://doi.org/10.1515/joc-2017-0088
https://doi.org/10.1515/joc-2017-0088
Publikováno v:
Journal of Optical Communications. 40:21-25
In this paper, we propose a high-quality factor (QF) ultra-compact structure for designing all optical filter based on two dimensional (2D) photonic crystals that can operate in third communication window range (1550 nm). The simulation results calcu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d2d22d5c37ef35354938332e20871db
https://doi.org/10.1515/joc-2017-0035
https://doi.org/10.1515/joc-2017-0035
Autor:
S. M. Sattari-Esfahlan, Saeid Shojaei
Publikováno v:
Solid State Communications. 273:66-72
Transport properties of biased planar Gaussian graphene superlattice (PGGSL) with Fermi velocity barrier is investigated by transfer matrix method (TMM). It is observed that enlargement of bias voltage over miniband width breaks the miniband to WSLs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3c4c247574341eea1b30901967db149
https://doi.org/10.1016/j.ssc.2017.08.005
https://doi.org/10.1016/j.ssc.2017.08.005
Publikováno v:
Journal of Optical Communications. 41:37-43
We have proposed simple ring resonator 5-channel demultiplexer based on optical channel drop filter analysis that is applicable at third communication window (1550 nm) range. Our proposed base filter is the important part in designing the demultiplex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea3aa58ced18f1bec08241cdd1fef56e
https://doi.org/10.1515/joc-2017-0129
https://doi.org/10.1515/joc-2017-0129
Publikováno v:
Annalen der Physik. 533:2100121
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81eae3bbde6cc76b1fffafff627d6579
https://doi.org/10.1002/andp.202100121
https://doi.org/10.1002/andp.202100121
Autor:
Hyeon-Sik Jang, Jae-Hyun Lee, Sang-Hwa Hyun, Ji-Yun Moon, Seok-Kyun Son, Ho-Chan Jang, Hyun-Sik Hwang, S. M. Sattari-Esfahlan, Seungil Kim, Byeong-Seon An, Dongmok Whang, Min-Ki Hong, Sangyeob Lee
Publikováno v:
Applied Surface Science. 554:149655
In this study, we successfully demonstrate the growth of an in-plane graphene/h-BN (GBN) heterostructure on a single crystal Ge (1 1 0) substrate. A group IV semiconductor Ge is an appropriate catalyst for the epitaxial growth of both graphene and h-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a75ba9f94ebc25185708275c2b332f48
https://doi.org/10.1016/j.apsusc.2021.149655
https://doi.org/10.1016/j.apsusc.2021.149655