Zobrazeno 1 - 6
of 6
pro vyhledávání: '"S. M. Ramey"'
Autor:
S M Ramey, David K. Ferry
Publikováno v:
Semiconductor Science and Technology. 19:S238-S240
A method is presented for treating particle–particle interactions that can be used within Monte Carlo simulations that include quantum potential corrections to the classical potential profile. We use the effective potential method to treat the quan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::489f97f38c168fc06a3c3006d5122fe8
https://doi.org/10.1088/0268-1242/19/4/080
https://doi.org/10.1088/0268-1242/19/4/080
Publikováno v:
Progress in Nonequilibrium Green's Functions II.
Soon, semiconductor devices will utilize very short gate lengths, of order 10-30 nm. These devices are expected to be dominated by quasi-ballistic, quantum transport in the active region. Simulation has developed as a major tool for predictive behavi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61e897bdb7c3f888be7ec4585d80d829
https://doi.org/10.1142/9789812705129_0012
https://doi.org/10.1142/9789812705129_0012
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
Developing doping technologies for the channel region of CMOS devices for 180 nm technology and beyond requires accurate profiles of electrically active dopants. We have recently improved the accuracy of spreading resistance profiles on sub-80 nm sou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c2962251c40fa8ca0063faf6b12babb
https://doi.org/10.1109/iit.1998.813811
https://doi.org/10.1109/iit.1998.813811
Publikováno v:
The 1998 international conference on characterization and metrology for ULSI technology.
In the past, resistivity and carrier density profiles derived from spreading resistance measurements have been satisfactorily verified by comparing a doped layer’s measured sheet resistance, ρs, with a sheet resistance value calculated from the on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cff2a4f88c5bf25cf161591fde6cd783
https://doi.org/10.1063/1.56799
https://doi.org/10.1063/1.56799
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:401
Over the years, several methods have emerged for determining the probe contact radius in spreading resistance measurements. The methods vary from attempting to determine the physical area of the probe contact to the use of the contact radius as a var
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bacf71ec5550e7e3b6cca9286fe16a0
https://doi.org/10.1116/1.591203
https://doi.org/10.1116/1.591203
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:389
Accurate determination of resistivity and carrier density from spreading resistance (SR) data depends heavily on the quality of the SR probes. This quality can be assessed by the shape of the calibration curve, which primarily depends on the properti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::314bfaa650863de01f61e7addeaf6764
https://doi.org/10.1116/1.591201
https://doi.org/10.1116/1.591201