Zobrazeno 1 - 7
of 7
pro vyhledávání: '"S. M. Plankina"'
Autor:
M. V. Dorokhin, A. V. Zdoroveyshchev, Yu. A. Danilov, M. P. Temiryazeva, S. M. Plankina, P. B. Demina, O. V. Vikhrova, Ivan Antonov, B. N. Zvonkov, Aleksey Nezhdanov, M. N. Drozdov, R. N. Kriukov
Publikováno v:
Semiconductors. 54:956-960
A new method for depositing carbon films by the thermal decomposition of carbon tetrachloride (CCl4) in a hydrogen flux in a reactor for metal-organic chemical vapor deposition (MOCVD) at atmospheric pressure is developed. From the results obtained b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9cfd1e937a1d6d87ad1c8e496383727
https://doi.org/10.1134/s106378262008028x
https://doi.org/10.1134/s106378262008028x
Autor:
B. N. Zvonkov, O. V. Vikhrova, Aleksey Nezhdanov, S. M. Plankina, I. Yu. Pashen’kin, S. Yu. Zubkov, R. N. Kriukov, A. A. Sushkov, D. A. Pavlov
Publikováno v:
Semiconductors. 53:1207-1210
The results of studying GaInAs/GaInP/GaAs photodiode structures grown by metal–organic vapor-phase epitaxy are reported. A procedure for the diagnostics of such multilayer structures is developed. The procedure is based on the application of Raman
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bc71e5a2ca00a97dd9f1ae369125f65
https://doi.org/10.1134/s1063782619090148
https://doi.org/10.1134/s1063782619090148
Publikováno v:
Semiconductors. 51:1456-1459
The capabilities of a technique based on combined photoluminescence and Raman-spectroscopy measurements upon lateral scanning across the cleaved edge of heterostructures for monitoring the strain profile and the thickness of epitaxial layers are demo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97d016119498f3a85b0ef005cde1f6af
https://doi.org/10.1134/s1063782617110239
https://doi.org/10.1134/s1063782617110239
Autor:
A. V. Zdoroveishchev, I. Yu. Pashenkin, S. M. Plankina, Aleksey Nezhdanov, A. E. Paraffin, B. N. Zvonkov, S. A. Pavlov, V. P. Lesnikov, O. V. Vikhrova, Yu. A. Danilov, A. V. Kudrin
Publikováno v:
Physics of the Solid State. 59:2150-2154
Laser annealing experiments were performed in order to increase the concentration of electrically active manganese in the layers of A3B5: Mn semiconductors. An LPX-200 KrF excimer laser with a wavelength of 248 nm and a pulse duration of ~30 ns was u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a31706153eacc0c739f89df6a4a606f8
https://doi.org/10.1134/s1063783417110324
https://doi.org/10.1134/s1063783417110324
Autor:
Yu. A. Danilov, I. Yu. Pashenkin, N. Yu. Konnova, O. V. Vikhrova, Aleksey Nezhdanov, S. M. Plankina, B. N. Zvonkov
Publikováno v:
Semiconductors. 50:1539-1542
Scanning confocal Raman spectroscopy is used to study the crystal structure of GaAs irradiated with Mn+ ions with subsequent pulse laser annealing. The scanning of cleaved cross sections of samples shows that the structure completely recovers over th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c47bde61e8ce7da2809050a79c29e136
https://doi.org/10.1134/s106378261611021x
https://doi.org/10.1134/s106378261611021x
Autor:
I. I. Chunin, Yu. A. Danilov, O. V. Vikhrova, Aleksey Nezhdanov, Pavel A. Yunin, B. N. Zvonkov, S. M. Plankina, I. L. Kalentyeva
Publikováno v:
Semiconductors. 49:99-103
The results of complex studies of InGaAs/GaAs nanoheterostructures δ-doped with Mn are reported. The structures are grown by metal-organic vapor-phase epitaxy in combination with laser deposition. By confocal Raman spectroscopy, it is shown that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2713f60b648dfce66be40d34d76cfad3
https://doi.org/10.1134/s1063782615010200
https://doi.org/10.1134/s1063782615010200
Autor:
David Tetelbaum, Selcuk Yerci, Alexey Belov, E. A. Pitirimova, V. N. Smirnov, S. M. Plankina, S. Foss, Anatoly Kovalev, Alexey Mikhaylov, Rasit Turan, A. V. Ershov, Terje G. Finstad
Publikováno v:
Physics of the Solid State. 51:409-416
Photoluminescence, infrared Fourier spectroscopy, Raman scattering, transmission electron microscopy, and electron diffraction were used to study the luminescent, optical, and structural properties of aluminum oxide layers (sapphire and films of Al2O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd2bff608ab7944d7742d28b39a55ee8
https://doi.org/10.1134/s1063783409020334
https://doi.org/10.1134/s1063783409020334