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pro vyhledávání: '"S. M. Merah"'
Publikováno v:
Microelectronics Reliability. 55:1460-1463
This article presents the effect of low magnetic field (B < 10 mT) on both Negative Bias Temperature Instability (NBTI) stress and recovery. This effect is a study on commercial power double diffused MOS transistors (VDMOSFET). We show that the degra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::496c924af111e063974e6848870421b3
https://doi.org/10.1016/j.microrel.2015.06.137
https://doi.org/10.1016/j.microrel.2015.06.137
