Zobrazeno 1 - 10
of 13
pro vyhledávání: '"S. M. Kahar"'
Publikováno v:
Materials Today: Proceedings. 37:119-121
Silicon carbide (SiC) is an attractive material for its excellent properties such as wide band gap, high chemical stability and thermal conductivity. The conventional methods for the preparation of SiC are time and energy consuming. In this paper, Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0190d0762feb250f5b145638cdc45521
https://doi.org/10.1016/j.matpr.2020.04.571
https://doi.org/10.1016/j.matpr.2020.04.571
Autor:
K. L. Foo, Chun Hong Voon, S. M. Kahar, Bee Ying Lim, S. T. Ten, Yarub Al-Douri, N. A. Parmin, Subash C. B. Gopinath, M. K. Md Arshad
Publikováno v:
Applied Physics A. 126
SiC nanomaterial (SiCNM) is known for its excellent properties and has great potential for a wide range of applications. In this article, preparation of SiCNMs from different types of graphite was performed by microwave-assisted synthesis. Different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25e340526f95037272d5d7e0d9cbaeb3
https://doi.org/10.1007/s00339-020-03916-5
https://doi.org/10.1007/s00339-020-03916-5
Autor:
Cheng Seong Khe, Abdul Rahman Mohamed, H. Cheun Lee, Uda Hashim, P. Y. P. Adelyn, Chun Hong Voon, Chin Wei Lai, A. R. N. Huda, S. M. Kahar, Siang-Piao Chai, N. M. S. Hidayah, Wei-Wen Liu, M. K. Md Arshad
Publikováno v:
Procedia Engineering. 184:460-468
The remarkable properties of graphene have directly accelerated the graphene research. Due to its unique and remarkable characteristics, graphene can be potentially used in various applications. Chemical Vapour Deposition (CVD) has been identified as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b2f4141c08f2a7d342d430d93f82f08
https://doi.org/10.1016/j.proeng.2017.04.117
https://doi.org/10.1016/j.proeng.2017.04.117
Autor:
C.C. Lee, S. M. Kahar, M. K. Md Arshad, Uda Hashim, W. Rahman, Chun Hong Voon, Bee Ying Lim, Subash C. B. Gopinath
Publikováno v:
Materials Science-Poland, Vol 34, Iss 4, Pp 770-779 (2016)
Silicon carbide (SiC) is an important ceramics for engineering and industrial applications due to its advantage to withstand in high temperatures. In this article, a demonstration of SiC nanowhiskers synthesis by using microwave heating has been show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f27078066931cb687bd0687fee9a8e5
https://doaj.org/article/6a56094508e644cbb11844be3a63d87b
https://doaj.org/article/6a56094508e644cbb11844be3a63d87b
Autor:
P. Y. P. Adelyn, Uda Hashim, Wei-Wen Liu, C.C. Lee, K.L. Foo, A. Rahim Ruslinda, Chun Hong Voon, M. K. Md Arshad, A. R. N. Huda, H. Cheun Lee, S. M. Kahar, W. Rahman, Bee Ying Lim
Publikováno v:
Materials Science Forum. 857:116-120
Silicon carbide is an attractive material for engineering and industrial applications in harsh conditions. In manufacturing process, conventional heating process is commonly used to synthesis the silicon carbide. In this study, SiC nanowhiskers were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bd50a7760c8a448ae0478444c82a472
https://doi.org/10.4028/www.scientific.net/msf.857.116
https://doi.org/10.4028/www.scientific.net/msf.857.116
Autor:
M. K. Md Arshad, Chun Hong Voon, N. A. Parmin, K. L. Foo, A. Rahim Ruslinda, Bee Ying Lim, S. M. Kahar, Subash C. B. Gopinath
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 701:012036
Silicon carbide is a promising material for various applications, especially for applications in high frequency, high power and high temperature and harsh conditions such as highly oxidative and corrosive environment. Currently, silicon carbide is pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62c055139ad2374def3fb6c80462c2ff
https://doi.org/10.1088/1757-899x/701/1/012036
https://doi.org/10.1088/1757-899x/701/1/012036
Autor:
M. K. Md Arshad, Wei-Wen Liu, Uda Hashim, Chun Hong Voon, H. Cheun Lee, A. R. N. Huda, S. M. Kahar, P. Y. P. Adelyn
Publikováno v:
AIP Conference Proceedings.
This work introduces the non-invasive glucose monitoring technique by using the Complementary Metal Oxide Semiconductor (CMOS) technologically fabricated spiral Interdigitated Electrodes (IDE) based biosensor. Scanning Electron Microscopy (SEM) image
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1d976a7ccbc90b4be1a118ba8ab72a2
https://doi.org/10.1063/1.4975271
https://doi.org/10.1063/1.4975271
Autor:
S. M. Kahar, Chun Hong Voon, A. R. N. Huda, Ramzan Mat Ayub, A. R. Ruslinda, Wei-Wen Liu, H. Cheun Lee, Subash C. B. Gopinath, M. K. Md Arshad, Uda Hashim, P. Y. P. Adelyn
Publikováno v:
AIP Conference Proceedings.
Simple and inexpensive mask layout design on a transparency film were demonstrated using the conventional complementary metal oxide semiconductor (CMOS) technique to produce interdigitated electrodes (IDEs) for biomedical biosensors applications. Lif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26a4164785560420105175a3623f1772
https://doi.org/10.1063/1.4975272
https://doi.org/10.1063/1.4975272
Autor:
Uda Hashim, H. Cheun Lee, P. Y. P. Adelyn, Chun Hong Voon, M. K. Md Arshad, S. M. Kahar, Noraini Othman, A. R. N. Huda, Wei-Wen Liu
Publikováno v:
AIP Conference Proceedings.
In this paper, the effect of gate workfunction variation on DC characteristics in 100 nm gate length silicon-on-insulator (SOI) junctionless (JL) and junction transistors has been investigated by using numerical simulations. The digital figure-of-mer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32a43ceadb47edaec3438273dc665da3
https://doi.org/10.1063/1.4948901
https://doi.org/10.1063/1.4948901
Autor:
M. K. Md Arshad, Chun Hong Voon, S. M. Kahar, A. R. N. Huda, H. Cheun Lee, A. R Ruslinda, Uda Hashim, Ramzan Mat Ayub, Noraini Othman, K.L. Foo, P. Y. P. Adelyn, Subash C. B. Gopinath
Publikováno v:
2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM).
In this paper, the effect of silicon body thickness (TSi) and silicon body width (WSi) variation on DC characteristics in 100 nm gate length silicon-on-insulator (SOI) junctionless (JL) and junction transistors has been investigated by using numerica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a2720d3469ca918cfe11d2aa7461844
https://doi.org/10.1109/rsm.2015.7354983
https://doi.org/10.1109/rsm.2015.7354983