Zobrazeno 1 - 10
of 17
pro vyhledávání: '"S. M. Faris"'
Publikováno v:
SID Symposium Digest of Technical Papers. 30:1058
The angular polarization behavior, polarization efficiency, and brightness enhancement capabilities of reflective CLC-based broadband polarizers have been studied. New methods for compensating the angular dependence of spectral characteristics for in
Autor:
T. K. Gustafson, S. M. Faris
Publikováno v:
Applied Physics Letters. 25:544-547
The bias dependence of the nonlinear mixing characteristics of metal‐barrier‐metal junction currents is deduced assuming an electron tunneling model. The difference‐frequency beat voltage at frequency ω1−nω2, where n is an integer and ω1 a
Publikováno v:
IBM Journal of Research and Development. 24:143-154
Design work on components for Josephson computer technology nondestructive read out cache memories has been published previously. In this paper, presenting a design for a 2.5-µm technology, 4 × 1K-bit cache chip with a nominal access time of about
Autor:
S. M. Faris
Publikováno v:
IEEE Circuits & Systems Magazine. 3:2-8
Josephson devices combine high speed and low power dissipation which are desirable assets necessary but not sufficient to guarantee the realization of high performance computers. Adequate gain, margins and other engineering considerations also must b
Publikováno v:
Physical Review Letters. 50:1611-1614
Superconducting sampling circuits have been used to investigate the transient response of long indium microbridges to current pulses in excess of their critical currents. For the first time, the rising-edge kinetic inductance spike and the nonzero mi
Publikováno v:
IEEE Transactions on Magnetics. 23:899-902
Using a novel chip architecture and cooling method, a superconducting Josephson Junction time domain reflectometer subsystem has been developed which provides wide bandwidth access to the room temperature environment. Presented is an overview of the
Autor:
S. M. Faris, E. A. Valsamakis
Publikováno v:
Journal of Applied Physics. 52:915-920
Resonances in asymmetric two junction SQUID’s are analyzed. The distinction between current‐controlled and voltage‐controlled cases is found to be crucial to the full understanding of the device dynamics. In the current‐controlled case, three
Publikováno v:
IEEE Journal of Quantum Electronics. 9:737-745
The voltage obtained from metal-barrier-metal (MBM) diodes by phase-sensitive detection when illuminated with optical and near-infrared radiation, modulated at 880 Hz, has been studied as a function of an applied dc bias. The detected voltage is a no
Publikováno v:
Applied Physics Letters. 27:629-631
Rectification characteristics of nonsuperconducting metal-barrier-metal junctions as deduced from electronic tunneling theory have been observed experimentally for optical frequency irradiation of the junction.
Publikováno v:
Applied Physics Letters. 25:493-495
Enhanced optically induced voltages have been observed across the junction of metal‐barrier‐metal point‐contact diodes which exhibit a current‐controlled negative differential resistance. Responsivities in excess of 5 V/W have been demonstrat