Zobrazeno 1 - 10
of 20
pro vyhledávání: '"S. M. El-Ghanam"'
Publikováno v:
Applied Physics A. 128
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a60758a071746c0dab08fe7ad7c1595
https://doi.org/10.1007/s00339-022-05736-1
https://doi.org/10.1007/s00339-022-05736-1
Publikováno v:
Nuclear Engineering and Technology. 52:1764-1770
The present work was mainly concerned with studying the operation of RC-phase shift oscillator based on MOSFET type 2N6660 under the influence of different temperature levels ranging from room temperature (25 °C) up-to135 °C and gamma-irradiation u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e599fd5f98203d8a20152927980424a
https://doi.org/10.1016/j.net.2020.01.017
https://doi.org/10.1016/j.net.2020.01.017
Autor:
S. M. El-Ghanam
Publikováno v:
Australian Journal of Electrical and Electronics Engineering. 17:224-227
The present paper presents a deep study on the effects of inductor parameters, such as core material, mechanical construction, DC resistance, quality factor and series resistance on the design, imp...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68483d823653dfb92719122075208ea8
https://doi.org/10.1080/1448837x.2020.1817243
https://doi.org/10.1080/1448837x.2020.1817243
Autor:
S. M. El-Ghanam
Publikováno v:
Indian Journal of Physics. 94:833-839
The positive super-lift Luo-converter is the advanced converter which has a lot of advantages. Thus, the proposed work aims in enhancing positive super-lift Luo-converter performance by using the appropriate passive components and MOSFETs for energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b0122ab218500c228331ad6dc82ba22
https://doi.org/10.1007/s12648-019-01528-1
https://doi.org/10.1007/s12648-019-01528-1
Publikováno v:
Journal of Scientific Research in Science. 36:100-112
The aim of the present paper is to shed further light on studying the temperature effects on the static (I-V) and dynamic (C-V) characteristics of bipolar junction- and metal oxide field effect - transistors. In this concern, several parameters were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fae07c0bdea76ea2db1d8e1590714d52
https://doi.org/10.21608/jsrs.2019.30999
https://doi.org/10.21608/jsrs.2019.30999
Publikováno v:
Journal of Scientific Research in Science. 34:287-297
The paper presents a study on the effect of diode power losses on the operation of 5/24.4 VDC boost converter based on MOSFET switch type STP36NF06. In this concern, a comparative study between the system performances in the discontinuous conduction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc55a7519c6a02a8e9cb3dd97be5fbc6
https://doi.org/10.21608/jsrs.2018.14051
https://doi.org/10.21608/jsrs.2018.14051
Publikováno v:
Journal of Scientific Research in Science. 35:585-599
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d64671628284f5cf10692983513a619b
https://doi.org/10.21608/jsrs.2018.122636
https://doi.org/10.21608/jsrs.2018.122636
Autor:
Fouad Abd El-Moniem Saad Soliman, Wafaa Abd El-Basit, S. M. El-Ghanam, Ashraf Mosleh Abdel-Maksood, S. A. Kamh
Publikováno v:
Nuclear Engineering and Technology, Vol 48, Iss 5, Pp 1219-1229 (2016)
The present paper reports on a trial to shed further light on the characterization, applications, and operation of radar speed guns or Gunn diodes on different radiation environments of neutron or γ fields. To this end, theoretical and experimental
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cc5527d0c77a7f885571493e27dfc11
Publikováno v:
International Journal of Scientific and Engineering Research. 7:185-195
Detailed computer simulation based study of photovoltaic cells/ modules using circuit simulator PVEducation S/W package was presented in this paper and used to simulate a circuit based model or PV cells/ modules and then to conduct behavioral study u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::032ab06f55e74e92ee5af95dca8b1ff0
https://doi.org/10.14299/ijser.2016.02.007
https://doi.org/10.14299/ijser.2016.02.007
Autor:
S.M. Abd El-Azeem, S. M. El-Ghanam
Publikováno v:
Cryogenics. 107:103071
The operation of power switching systems based on Gallium Nitride (GaN) and Silicon Carbide (SiC) metal oxide field effect transistors (MOSFETs) were presented under the influence of very low temperatures ranging from (−173 °C) up-to (+25 °C). In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e28b8703767ee5ec1e90a4d4d1debdc
https://doi.org/10.1016/j.cryogenics.2020.103071
https://doi.org/10.1016/j.cryogenics.2020.103071