Zobrazeno 1 - 8
of 8
pro vyhledávání: '"S. M. Chupyra"'
Publikováno v:
Фізика і хімія твердого тіла, Vol 23, Iss 3, Pp 450-453 (2022)
The results of the study of the electrical characteristics of the n-SnS2/n-CdIn2Te4, obtained by a method of deposition over optical contact, have been presented. It is shown that the current-voltage characteristics and the capacitance-voltage (C-V)
Externí odkaz:
https://doaj.org/article/52213f57d6a946fba39de91e438cb309
Publikováno v:
Semiconductors. 51:1041-1043
The parameters of impurity levels in Hg3In2Te6 samples are studied using the temperature dependences of the electron concentration n(T) and the Fermi-level energy E F(T). The dependences n(T) and E F(T) are obtained from data on the Hall coefficient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7136b8dc5be5d1fc2336612db1fa125
https://doi.org/10.1134/s1063782617080061
https://doi.org/10.1134/s1063782617080061
Publikováno v:
Sensor Electronics and Microsystem Technologies; Том 3, № 1 (2006); 23-28
Сенсорная электроника и микросистемные технологии; Том 3, № 1 (2006); 23-28
Сенсорна електроніка і мікросистемні технології; Том 3, № 1 (2006); 23-28
Сенсорная электроника и микросистемные технологии; Том 3, № 1 (2006); 23-28
Сенсорна електроніка і мікросистемні технології; Том 3, № 1 (2006); 23-28
For the semiconductor subjected to the action of carrier-warming electric field and two quasi-monocromatic waves under impurity absorption the authors determined the differential equation set describing the trigonometric series coefficients for the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99dbd1c4b73d0f7f29fd401eb4435ffb
http://semst.onu.edu.ua/article/view/116890
http://semst.onu.edu.ua/article/view/116890
Autor:
S. M. Chupyra, S. V. Bilichuk, O. G. Grushka, O. M. Mysliuk, A. I. Savchuk, V. V. Shlemkevych
Publikováno v:
Semiconductors. 48:1271-1274
The results of studying the electrical and photoelectric properties of Hg3In2Te6 bulk crystals with stoichiometric composition and of Hg3(1 + δ)In2(1 − δ)Te6 crystals with a deviation from the stoichiometric composition of δ = ±0.06 are reporte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12ed5b92cec1f42920803e58390c9ad3
https://doi.org/10.1134/s1063782614100091
https://doi.org/10.1134/s1063782614100091
Publikováno v:
Semiconductors. 47:1141-1144
The effect of Mn impurities on the properties of Hg3In2Te6 crystals is studied by electrical and optical measurements. It is shown that, despite the high dopant concentration (1 × 1019 cm−3), the electron concentration remains the same as that in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97a52206ee28478ad2dcdfcb9a175ff0
https://doi.org/10.1134/s1063782613090078
https://doi.org/10.1134/s1063782613090078
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 9:93-96
In the framework of the one-dimension field model of semiconductor simultaneosly subjected to the action of carrier-warming electric field and two quasi- monochromatic light waves the authors have numerically calculated the spatial-temporal distribut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aab7d9979d97aa7da5a3d2d262469857
https://doi.org/10.15407/spqeo9.01.093
https://doi.org/10.15407/spqeo9.01.093
Autor:
V. T. Maslyuk, S. M. Chupyra, I. I. Zabolotskiy, O. M. Mysliuk, O. G. Grushka, S. V. Bilichuk
Publikováno v:
Semiconductors. 46:312-314
The results of studying the electrical properties of Hg3In2Te6 crystals irradiated with electrons with the energy E e = 18 MeV and the dose D = 4 × 1016 cm−2 are reported. It is shown that, irrespective of the charge-carrier concentration in the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::059f08c5bf007c980b98e56d6ecb125e
https://doi.org/10.1134/s1063782612030128
https://doi.org/10.1134/s1063782612030128
Publikováno v:
Semiconductors. 45:49-51
The effect of electric field and temperature on the conductivity of bulk Hg3In2Te6 crystals is investigated. It is shown that the I–V characteristics in high electric fields are of the S type with the effect of switching into a low-resistance state
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fadb2ef5d21049f2cbb6b480c4af17dd
https://doi.org/10.1134/s106378261101009x
https://doi.org/10.1134/s106378261101009x