Zobrazeno 1 - 10
of 18
pro vyhledávání: '"S. M. Bilodeau"'
Autor:
M. W. Russell, Gregory T. Stauf, C. Ragaglia, S. M. Bilodeau, J. F. Roeder, P. C. Van Buskirk, Thomas H. Baum
Publikováno v:
Advanced Materials for Optics and Electronics. 10:145-154
MOCVD processes for (Ba,Sr)TiO3 (BST) and Pb(Zr,Ti)O3 (PZT) are described based on different metal – organic precursors. In the case of BST, processes using polyamine and tetraglyme adducts of group II metals were compared. Similar incorporation ef
Autor:
P. Chen, Francis G. Celii, Theodore S. Moise, L. Archer, Scott R. Summerfelt, M. W. Russell, S. M. Bilodeau, P. C. Van Buskirk, Daniel J. Vestyck, R. Beavers, Stephen T. Johnston, Stephen R. Gilbert
Publikováno v:
Integrated Ferroelectrics. 27:227-241
We report the effect of top electrode structure on the electrical properties of ferroelectric Pb(ZrxTi1-x)O3 (PZT) capacitors. Samples with Ir/PZT/Ir or Ir/IrO2/PZT/Ir stacks were prepared using reactively sputtered Ir/IrO2 (top) and Ir (bottom) elec
Publikováno v:
Integrated Ferroelectrics. 18:109-118
An MOCVD technique has been developed for (Ba,Sr)TiO3 (BST) films based on flash vaporization of metalorganic precursors with exceptional composition control and no process drift for the equivalent of ∼1300 wafers of 30 nm thickness. Charge storage
Publikováno v:
Integrated Ferroelectrics. 10:9-22
There are numerous ternary and quaternary oxides that are attractive for use in advanced IC's. These include Ba1-xSrxTiO3 (BST), Pb1-xLax(Zr1-yTiy)1-x/4O3 (PLZT) and SrBi2Ta2O9. Although each application has unique material requirements, in most case
Publikováno v:
Integrated Ferroelectrics. 7:307-318
The CVD of high permittivity materials such as BaSrTiO3 presents new challenges to the semiconductor equipment and materials industries. The electrical properties of the material are a strong function of composition, microstructure and dopant concent
Publikováno v:
Integrated Ferroelectrics. 6:141-153
We report chemical vapor deposition (CVD) of PbLaTiO3 films for integrated pyroelectric devices. Pb(thd)2, La(thd)3 and Ti(O-Pr)2(thd)2 were introduced to the reactor via a single liquid precursor solution that is vaporized. Substrate temperatures we
Autor:
T. Hsu, L. A. Wills, G. Xing, Scott R. Summerfelt, M. W. Russell, D. J. Vestcyk, Rahim Kavari, Theodore S. Moise, S. T. Johnson, Tomoyuki Sakoda, Stephen R. Gilbert, S. Ma, Alvin Leng Sun Loke, Jun Amano, S. M. Bilodeau, Luigi Colombo, P. C. van Buskirk
Publikováno v:
Applied Physics Letters. 79:4004-4006
The measured switched polarization properties of integrated Pb(Zr,Ti)O3 (PZT) capacitors arrays have been found to show a small dependence on individual capacitor size in the range from 0.17 and 100 μm2. These thin (90 nm) PZT capacitors have low vo
Publikováno v:
Applied Physics Letters. 75:1299-1301
The microstructure and chemistry of a Ti-rich (Ba, Sr)TiO3 film with 53.4% Ti deposited on a Pt/SiO2/Si substrate by metallorganic chemical-vapor deposition was studied using high-resolution transmission electron microscopy and elemental mapping in e
Autor:
Chongying Xu, S. M. Bilodeau, A.S. Borovik, J. F. Roeder, D.J Vestyck, Thomas H. Baum, A.A. Ebbing
Publikováno v:
MRS Proceedings. 812
Increasing the elastic modulus and hardness of low K films is one of the key challenges towards integration of these materials into future integrated circuits. Several approaches are explored for increasing the hardness of carbon doped oxide (CDO) di
Autor:
Stephen T. Johnston, Daniel J. Vestyck, Jun Amano, Stephen R. Gilbert, Luigi Colombo, Rahim Kavari, G. Xing, S. R. Summerfelt, M. W. Russell, Alvin Leng Sun Loke, Tomoyuki Sakoda, S. M. Bilodeau, Theodore S. Moise, T. Hsu, L. A. Wills, S. Ma
Publikováno v:
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
Summary form only given. High-density, embedded ferroelectric memory (FeRAM) has the potential to replace embedded flash, embedded DRAM, and non-cache SRAM and could be a key enabler for future system-on-a-chip applications. Despite this appeal, the