Zobrazeno 1 - 10
of 26
pro vyhledávání: '"S. M. Asadov"'
Publikováno v:
Russian Microelectronics. 51:117-125
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5623bdbe8ff0e6a2eaa63d44a56213f6
https://doi.org/10.1134/s1063739722030027
https://doi.org/10.1134/s1063739722030027
Publikováno v:
Colloid Journal. 84:1-12
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baea9b0bf7b941b9f0c6ead30243d92e
https://doi.org/10.1134/s1061933x22010021
https://doi.org/10.1134/s1061933x22010021
Publikováno v:
Inorganic Materials. 58:111-116
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26567f567669208513df4253c3ed9e3e
https://doi.org/10.1134/s0020168522020029
https://doi.org/10.1134/s0020168522020029
Autor:
S. M. Asadov
Publikováno v:
Russian Journal of Physical Chemistry A. 96:259-266
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebdee29f45ec406e84bf758a7485752a
https://doi.org/10.1134/s0036024422020029
https://doi.org/10.1134/s0036024422020029
Autor:
S. M. Asadov
Publikováno v:
Russian Microelectronics. 50:264-277
Nucleation and crystallization processes of multicomponent particles are simulated using the example of the formation of two-dimensional (2D) GaSxSe1 – x (0 ≤ x ≤ 1) solid solutions in thermodynamically closed systems. A nonlinear physicochemic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bd7a3d37dd5c489fe3345122caf4c81
https://doi.org/10.1134/s1063739721030021
https://doi.org/10.1134/s1063739721030021
Publikováno v:
Russian Microelectronics. 49:452-465
The paper presents the results of modeling, theoretical and experimental investigations on the physicochemical conditions of the synthesis, calculation of the Т–х phase diagram, thermodynamics and kinetics of crystallization, and correlation of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f90510c02519936ac6bbd5ef6876cdb3
https://doi.org/10.1134/s1063739721010042
https://doi.org/10.1134/s1063739721010042
Publikováno v:
Russian Microelectronics. 49:263-268
The dielectric properties and ac conductivity of an electronically irradiated layered TlGaS2 single crystal are studied in the frequency range of 5 × 104–3.5 × 107 Hz. It is established that electron irradiation of TlGaS2 single crystal samples w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32a8ccb02467f5290c3ca8e657adb521
https://doi.org/10.1134/s1063739720040022
https://doi.org/10.1134/s1063739720040022
Publikováno v:
Inorganic Materials. 56:333-337
The low-temperature (80–190 K) thermoelectric power of TlCrS2 has been shown to follow the relation α(T) = (0.2T – 13) μV/K, characteristic of charge transport through localized states in the band gap. As the temperature is raised from 338 to 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::593841f24a4d3993449cbeef54c42af9
https://doi.org/10.1134/s0020168520040093
https://doi.org/10.1134/s0020168520040093
Publikováno v:
Russian Microelectronics. 48:422-427
It was established that the variable-range-hopping mechanism of dc-conductivity takes place in the GaS single crystal at low temperatures. The parameters of localized states in the forbidden gap of studieGaS samples have been evaluated. Dielectric pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5f532a9e799054c45696c8d91600108
https://doi.org/10.1134/s1063739719660016
https://doi.org/10.1134/s1063739719660016
Autor:
S. M. Asadov, S. N. Mustafaeva
Publikováno v:
Inorganic Materials. 55:1087-1091
We have studied the effect of doping with silver on the dielectric properties and ac conductivity of TlInSe2 (2 mol % Ag) single crystals grown by the Bridgman–Stockbarger method using a growth charge synthesized from high-purity chemical elements.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d640202fc9b4f6b90e4ed1c2a08b02a
https://doi.org/10.1134/s0020168519100017
https://doi.org/10.1134/s0020168519100017