Zobrazeno 1 - 10
of 296
pro vyhledávání: '"S. Luryi"'
Publikováno v:
Silicon-Molecular Beam Epitaxy ISBN: 9781351076616
Silicon-Molecular Beam Epitaxy
Silicon-Molecular Beam Epitaxy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1304bdd93c436802298413052f8d8a6
https://doi.org/10.1201/9781351076616-8
https://doi.org/10.1201/9781351076616-8
Publikováno v:
International Journal of High Speed Electronics and Systems. 10:75-81
Previously we demonstrated a new class of VLSI-compatible multiemitter Si/SiGe/Si npn HBTs with enhanced logic functionality. These devices have two (or more) emitter contacts and no base contact. Given a potential difference between any two emitter
Silicon technology has developed along virtually one single line: reducing the minimal size of lithographic features. But has this taken us to the point of diminishing returns? Are we now at a turning point in the logical evolution of microelectronic
Publikováno v:
Future Trends in Microelectronics
This chapter contains sections titled: Introduction Hysteretic semiconductor-metal phase transition in VO 2 - major and minor loops How hysteresis causes problems in bolometric readout - forward and backward excursions Nonhysteretic branches in resis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::552c5fcd546694c7cbf4ed29937f5dc0
https://doi.org/10.1002/9780470649343.ch33
https://doi.org/10.1002/9780470649343.ch33
Autor:
null MW Dashiell, null JF Beausang, null H Ehsani, null GJ Nichols, null DM Depoy, null LR Danielson, null P Talamo, null KD Rahner, null EJ Brown, null SR Burger, null PM Foruspring, null WF Topper, null PF Baldasaro, null CA Wang, null R Huang, null M Connors, null G Turner, null Z Shellenbarger, null G Taylor, null J Li, null R Martinelli, null D Donetski, null S Anikeev, null G Belenky, null S Luryi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bb02958288a54b04dee7d521d000e8c
https://doi.org/10.2172/881293
https://doi.org/10.2172/881293
Autor:
V.B. Gorfinkel, S. Luryi
Publikováno v:
Conference on Lasers and Electro-Optics Europe.
Autor:
null D Donetsky, null S Anikeev, null N Gu, null G Belenky, null S Luryi, null CA Wang, null DA Shiau, null M Dashiell, null J Beausang, null and G Nichols
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77862ba57a14bae27830d7494ecefe53
https://doi.org/10.2172/837455
https://doi.org/10.2172/837455
Autor:
K. D. Rahner, W.F. Topper, Jizhong Li, J. F. Beausang, G. Belenky, Michael K. Connors, L. R. Danielson, J. Azarkevich, S. Burger, G. Nichols, R. Marinelli, H. Ehsani, J. Hazel, P. Talamo, S. Luryi, George W. Turner, P. Fourspring, D. R. Taylor, G. Taylor, R. K. Huang, D. DePoy, E. Brown, S. Anikeev, P. F. Baldasaro, D. Donetski, Z. Shellenbarger, M. W. Dashiell, C. A. Wang
Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d00eecf067003cecfda9f58d841f18d5
https://doi.org/10.2172/837459
https://doi.org/10.2172/837459
Autor:
G. Nichols, G. Belenky, S. Luryi, D. Donetsky, M. W. Dashiell, C. A. Wang, S. Anikeev, G Ning, J Beausang, D. A. Shiau
This work summarizes recent data on minority carrier lifetime in n- and p-type double heterostructures (DHs) of 0.5-0.6 eV GaInAsSb confined with GaSb and AlGaAsSb cap layers. Recombination times were measured by time-resolved photoluminescence (TRPL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::133b174f059652e25196a0dbc890fc6b
https://doi.org/10.2172/836452
https://doi.org/10.2172/836452