Zobrazeno 1 - 10
of 135
pro vyhledávání: '"S. Lepilliet"'
Publikováno v:
2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)
2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Aug 2022, Delft, Netherlands. pp.1-2, ⟨10.1109/IRMMW-THz50927.2022.9895722⟩
2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Aug 2022, Delft, Netherlands. pp.1-2, ⟨10.1109/IRMMW-THz50927.2022.9895722⟩
International audience; We investigate the development of on-wafer multiline Thru-Reflect-Line calibration kits to enable transistor characterization beyond 110 GHz. The final objective is to measure the S parameters of a HEMT having a very high cut-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4303fed1f186f6761135ddf94b5cd981
https://hal.science/hal-03794291
https://hal.science/hal-03794291
Publikováno v:
99th ARFTG Microwave Measurement Conference 2022, colocated with IEEE/MTT-S International Microwave Symposium, IMS 2022
99th ARFTG Microwave Measurement Conference 2022, colocated with IEEE/MTT-S International Microwave Symposium, IMS 2022, Jun 2022, Denver, United States. ⟨10.1109/ARFTG54656.2022.9896490⟩
99th ARFTG Microwave Measurement Conference 2022, colocated with IEEE/MTT-S International Microwave Symposium, IMS 2022, Jun 2022, Denver, United States. ⟨10.1109/ARFTG54656.2022.9896490⟩
International audience; This paper presents an innovative impedance tuner architecture aiming at on-wafer characterization. The proposed impedance tuner is composed of an integrated attenuator, which can be tuned in an analog manner, and a transmissi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e24bb15d12f5d2e078c2b9b8c310228
https://hal.science/hal-03698168
https://hal.science/hal-03698168
Autor:
C. Maye, S. Lepilliet, E. Okada, E. Brezza, A. Gauthier, M. Margalef-Rovira, D. Gloria, G. Ducournau, C. Gaquiere
Publikováno v:
16th European Microwave Integrated Circuits Conference, EuMIC 2021
16th European Microwave Integrated Circuits Conference, EuMIC 2021, Apr 2022, London, United Kingdom. ⟨10.23919/EuMIC50153.2022.9783811⟩
16th European Microwave Integrated Circuits Conference, EuMIC 2021, Apr 2022, London, United Kingdom. ⟨10.23919/EuMIC50153.2022.9783811⟩
Session EuMIC01 - Large Signal and Non-linear Charaterization Techniques; International audience; In this paper, we report high power performances at 185 GHz on single ended heterojunction bipolar transistors in the BiCMOS055 technology. Three device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2da1b7531c136098432016a5c5674035
https://hal.science/hal-03637263
https://hal.science/hal-03637263
Autor:
A Bucamp, C Coinon, S Lepilliet, D Troadec, G Patriarche, M H Diallo, V Avramovic, K Haddadi, X Wallart, L Desplanque
Publikováno v:
Nanotechnology
Nanotechnology, 2022, 33 (14), pp.145201. ⟨10.1088/1361-6528/ac45c5⟩
Nanotechnology, 2022, 33 (14), pp.145201. ⟨10.1088/1361-6528/ac45c5⟩
In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core/Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former cas
Akademický článek
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Publikováno v:
2019 Compound Semiconductor Week (CSW).
We report a high maximum frequency of oscillation ( $f_{\max}$ ) and a current-gain cutoff frequency $(\boldsymbol{f}_{\mathbf{T}}).\boldsymbol{f}_{\mathbf{\max}}/\boldsymbol{f}_{\mathbf{T}} =1.2\ \mathbf{THz}/220 \mathbf{GHz}$ ; at $\boldsymbol{V}_{
Akademický článek
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Publikováno v:
Microwave and Optical Technology Letters
Microwave and Optical Technology Letters, Wiley, 2002, 33, pp.352-355
Microwave and Optical Technology Letters, 2002, 33, pp.352-355
Microwave and Optical Technology Letters, Wiley, 2002, 33, pp.352-355
Microwave and Optical Technology Letters, 2002, 33, pp.352-355
A very high broadband method for determining the electromagnetic properties of isotropic film-shaped materials, which uses coplanar lines as cells, is presented. The material tested is the coplanar line substrate. The complex properties are computed
Akademický článek
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Autor:
A. Minko, V. Hoel, S. Lepilliet, G. Dambrine, J.C. DeJaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
Publikováno v:
IEEE Electron Device Letters. 25:167-169
AlGaN-GaN high-electron mobility transistors (HEMTs) based on high-resistivity silicon substrate with a 0.17-/spl mu/m T-shape gate length are fabricated. The device exhibits a high drain current density of 550 mA/mm at V/sub GS/=1 V and V/sub DS/=10