Zobrazeno 1 - 10
of 29
pro vyhledávání: '"S. Leibenzeder"'
Autor:
W. Suttrop, S. Leibenzeder, Gerhard Pensl, Wolfgang J. Choyke, Adolf Schöner, R. Steiner, W. Götz
Publikováno v:
Materials Science Forum. :69-74
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a30ae010d8e2cc9df86273f5fc2e722
https://doi.org/10.4028/www.scientific.net/msf.143-147.69
https://doi.org/10.4028/www.scientific.net/msf.143-147.69
Autor:
Adolf Schöner, W. Suttrop, Wolfgang J. Choyke, R. A. Stein, S. Leibenzeder, W. Götz, Gerhard Pensl
Publikováno v:
Journal of Applied Physics. 73:3332-3338
Hall‐effect and infrared‐absorption measurements are performed on n‐type 4H‐SiC samples to investigate the energy positions of the ground state and the excited states of the nitrogen donor in the 4H polytype of silicon carbide. Two electrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1027a74e68de47569b384c4e43bd8cbe
https://doi.org/10.1063/1.352983
https://doi.org/10.1063/1.352983
Autor:
W. Suttrop, Gerhard Pensl, S. Karmann, C. Haberstroh, S. Leibenzeder, Reinhard Helbig, A. Schöner, M. Schadt, R. A. Stein, F. Engelbrecht
Publikováno v:
Physica B: Condensed Matter. 185:75-78
Homoepitaxial growth of 6H-SiC layers is performed at 1600°C using propane and silane as source gases. The influence of the growth parameters, temperature and gas concentrations on the growth rate is discussed. The films are examined by structural,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b8708d8f2ab02a1efbdb00921b217f0
https://doi.org/10.1016/0921-4526(93)90216-s
https://doi.org/10.1016/0921-4526(93)90216-s
Autor:
W. Suttrop, Wolfgang J. Choyke, W. Götz, Gerhard Pensl, S. Leibenzeder, Adolf Schöner, René A. Stein
Publikováno v:
Materials Science Forum. :495-500
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02f936f56e0f00a68a42534aee6bec99
https://doi.org/10.4028/www.scientific.net/msf.117-118.495
https://doi.org/10.4028/www.scientific.net/msf.117-118.495
Autor:
W. Suttrop, S. Karmann, C. Haberstroh, R. A. Stein, F. Engelbrecht, Gerhard Pensl, Reinhard Helbig, S. Leibenzeder, Adolf Schöner, M. Schadt
Publikováno v:
Journal of Applied Physics. 72:5437-5442
Homoepitaxial growth of single crystalline 6H‐SiC layers is performed by chemical vapor deposition (CVD). 6H‐SiC substrates are grown by a sublimation technique. They have vicinal surfaces inclined 1.5° to 2° from the (0001) plane towards the [
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::362771d1b91111d58d111dc2639b868f
https://doi.org/10.1063/1.351985
https://doi.org/10.1063/1.351985
Publikováno v:
Journal of Applied Physics. 72:3708-3713
Hall effect and infrared absorption measurements of n‐type silicon carbide of the 6H polytype are employed to investigate the energy position of the ground state and excited states of the nitrogen donor. A donor model is proposed that assigns four
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fadc02429d60cbbd0f5a849cd6d1c791
https://doi.org/10.1063/1.352318
https://doi.org/10.1063/1.352318
Publikováno v:
Materials Science and Engineering: B. 11:27-30
By electron spin resonance (ESR) and photo-ESR, vanadium has been identified as an electrically amphoteric deep level impurity introducing both donor, D 0 /D + , and acceptor, A 0 /A − , states in the band gap of 4H- and 6H-SiC. The vanadium donor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e76d420c8410056ed16cc8b3bbed411
https://doi.org/10.1016/0921-5107(92)90183-a
https://doi.org/10.1016/0921-5107(92)90183-a
Publikováno v:
Materials Science Forum. :1213-1218
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5253719a1766e069d6d8313616a7c6ab
https://doi.org/10.4028/www.scientific.net/msf.83-87.1213
https://doi.org/10.4028/www.scientific.net/msf.83-87.1213
Publikováno v:
Advances in Space Research. 11:297-304
The experimental conception of the floating zone (FZ) technique for the growth of GaAs crystals with larger diameters under microgravity, including the use of a stoichiometry control by a controlled As-vapor source, is explained in this paper. Also f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c7477828271d56b046954bb01404ce0
https://doi.org/10.1016/0273-1177(91)90299-y
https://doi.org/10.1016/0273-1177(91)90299-y
Publikováno v:
Materials Science and Engineering: B. 11:69-71
Large SiC crystals can be grown by a sublimation process. For electronic application the control of the growth of a definite polytype is important. We have shown that sublimation growth on the Si[0001] side, under given conditions, always crystallize
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88bf76891ad61f7dec2575a024d5a6b3
https://doi.org/10.1016/0921-5107(92)90193-d
https://doi.org/10.1016/0921-5107(92)90193-d