Zobrazeno 1 - 10
of 130
pro vyhledávání: '"S. Lazanu"'
Autor:
C, Palade, A, Slav, A M, Lepadatu, I, Stavarache, I, Dascalescu, A V, Maraloiu, C, Negrila, C, Logofatu, T, Stoica, V S, Teodorescu, M L, Ciurea, S, Lazanu
Publikováno v:
Nanotechnology. 30(44)
Trilayer memory capacitors of control HfO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::cd3c16345c7e287fce80558b9af0ace1
https://pubmed.ncbi.nlm.nih.gov/31342930
https://pubmed.ncbi.nlm.nih.gov/31342930
Autor:
A-M, Lepadatu, A, Slav, C, Palade, I, Dascalescu, M, Enculescu, S, Iftimie, S, Lazanu, V S, Teodorescu, M L, Ciurea, T, Stoica
Publikováno v:
Scientific Reports
Si and Ge nanocrystals in oxides are of a large interest for photo-effect applications due to the fine-tuning of the optical bandgap by quantum confinement in nanocrystals. In this work, dense Ge nanocrystals suitable for enhanced photoconduction wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::3c785ec3b0dd16ab86bd908d2911ddfa
https://pubmed.ncbi.nlm.nih.gov/29559710
https://pubmed.ncbi.nlm.nih.gov/29559710
Autor:
A M, Lepadatu, C, Palade, A, Slav, A V, Maraloiu, S, Lazanu, T, Stoica, C, Logofatu, V S, Teodorescu, M L, Ciurea
Publikováno v:
Nanotechnology. 28(17)
High performance trilayer memory capacitors with a floating gate of a single layer of Ge quantum dots (QDs) in HfO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::2c204295cfb7a58b532533cb6050feec
https://pubmed.ncbi.nlm.nih.gov/28291015
https://pubmed.ncbi.nlm.nih.gov/28291015
Autor:
Ionel Lazanu, S Lazanu
Publikováno v:
Physica Scripta. 67:388-394
In the present paper, the phenomenological model developed by the authors in previous papers has been used to evaluate the degradation induced by hadron irradiation at the future accelerator facilities or by cosmic protons in high resistivity silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85245e37c799632d905a3ab603dafb8b
https://doi.org/10.1238/physica.regular.067a00388
https://doi.org/10.1238/physica.regular.067a00388
Autor:
Ionel Lazanu, S. Lazanu
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 419:570-576
The concentration of primary radiation defects induced by charged pions, in the energy range 20 MeV–50 GeV, in the bulk of silicon, GaAs and diamond has been calculated in order to characterise the radiation resistance of these materials. The mecha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fffded32608190c3d0f48878868dae52
https://doi.org/10.1016/s0168-9002(98)00834-1
https://doi.org/10.1016/s0168-9002(98)00834-1
Autor:
V. Labau, I. Lazanu, V. M. Ghete, C. Girlea, I. Girlea, S. Lazanu, P. G. Rancoita, A. Vasilescu, M. Rattaggi, T. Angelescu, A. Mihul
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 345:303-307
An intermediate energy standard neutron field provided by the ITN-ΣΣ facility of IAP Bucharest Magurele has been calibrated for hardness studies. The facility is well standardized in neutron fluence and the neutron spectrum is close to the albedo n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f3d44dc60e071873cfc4461c07fa416
https://doi.org/10.1016/0168-9002(94)91006-5
https://doi.org/10.1016/0168-9002(94)91006-5
Autor:
S. Lazanu, Ionel Lazanu
The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from available
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fce34fcaea6ab0e8048cb61f821009b7
http://cds.cern.ch/record/1000323
http://cds.cern.ch/record/1000323
Autor:
Ionel Lazanu, S Lazanu
For the new hadron collider LHC and some of its updates in luminosity and energy, as SLHC and VLHC, the silicon detectors could represent an important option, especially for the tracking system and calorimetry. The main goal of this paper is to analy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::728b3f3d8b00710ea1f248c0f92c1112
Publikováno v:
ROMOPTO 2000: Sixth Conference on Optics.
Anodic film oxide was deposited in a alcohol-glycol-water (AGW) solution on n-GaAs for passivation purpose in stripe technology for laser diodes. The characteristics of anodic oxide were measured by scanning electron microscopy (SEM), Rutherford back
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f724b17e007c953294ef4fd092be04fa
https://doi.org/10.1117/12.432918
https://doi.org/10.1117/12.432918
Autor:
Ionel Lazanu, S. Lazanu
A comparative theoretical study of the damages produced by protons and pions, in the energy range 50 MeV - 50 GeV, in diamond, is presented. The concentration of primary defects (CPD) induced by hadron irradiation is used to describe material degrada
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d356d49d14ed7a1afcaf7a5ccf573ed