Zobrazeno 1 - 10
of 71
pro vyhledávání: '"S. Lavanga"'
Autor:
Helmut Brech, Matteo Meneghini, S. Lavanga, Gaudenzio Meneghesso, Isabella Rossetto, Enrico Zanoni, A. Barbato, Andrea Favaron, Haifeng Sun, Marco Silvestri
Publikováno v:
IEEE Transactions on Electron Devices. 64:1032-1037
This paper demonstrates that—for high-electric fields and drain current levels—the electroluminescence (EL) versus VGS curves of GaN-on-Si radio frequency HEMTs significantly deviate from the well-known bell-shape, due to the turn-on of a seconda
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22f569b3d167290ce1b8909bd7403229
https://doi.org/10.1109/ted.2017.2654859
https://doi.org/10.1109/ted.2017.2654859
Autor:
Thomas Detzel, Giovanni Verzellesi, Gianmauro Pozzovivo, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Gilberto Curatola, L. Morassi, S. Lavanga, Oliver Häberlen
Publikováno v:
IEEE Electron Device Letters. 35:443-445
Pulse behavior of insulated-gate double-field-plate power AlGaN/GaN HEMTs with C-doped buffers showing small current-collapse effects and dynamic RDS,on increase can accurately be reproduced by numerical device simulations that assume the CN-CGa auto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::947722ddb4ae6c8fe93d0100aefd3b0a
https://doi.org/10.1109/led.2014.2304680
https://doi.org/10.1109/led.2014.2304680
Autor:
S. Carta, S. Lavanga, Ernesto Limiti, P. Calvani, Maria Cristina Rossi, F. Sinisi, E. Giovine, A. Corsaro, Gennaro Conte, Marco Girolami, V. G. Ralchenko, Daniele M. Trucchi
Publikováno v:
Diamond and related materials 18 (2009): 786–788. doi:10.1016/j.diamond.2009.01.014
info:cnr-pdr/source/autori:Calvani P. 1; Corsaro A. 1; Girolami M. 1; Sinisi F. 1; Trucchi D.M. 1-6; Rossi M.C. 1; Conte G. 1; Carta S. 2; Giovine E. 2; Lavanga S. 3; Limiti E. 4; Ralchenko V. 5/titolo:DC and RF performance of surface channel MESFETs on H-terminated polycrystalline diamond/doi:10.1016%2Fj.diamond.2009.01.014/rivista:Diamond and related materials/anno:2009/pagina_da:786/pagina_a:788/intervallo_pagine:786–788/volume:18
info:cnr-pdr/source/autori:Calvani P. 1; Corsaro A. 1; Girolami M. 1; Sinisi F. 1; Trucchi D.M. 1-6; Rossi M.C. 1; Conte G. 1; Carta S. 2; Giovine E. 2; Lavanga S. 3; Limiti E. 4; Ralchenko V. 5/titolo:DC and RF performance of surface channel MESFETs on H-terminated polycrystalline diamond/doi:10.1016%2Fj.diamond.2009.01.014/rivista:Diamond and related materials/anno:2009/pagina_da:786/pagina_a:788/intervallo_pagine:786–788/volume:18
DC and RF performance of submicron gate-length metal–semiconductor field effect transistors (MESFETs) fabricated on hydrogen-terminated polycrystalline diamond is investigated in detail for different material electronic quality (grain size in the r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0bae8e14d360228a789d9711670bf69
https://hdl.handle.net/11590/142476
https://hdl.handle.net/11590/142476
Autor:
Gerhard Prechtl, Oliver Haeberlen, S. Lavanga, Jörg Franke, A. Kassmanhuber, Gianmauro Pozzovivo, Gilberto Curatola, S. Yuferev, Thomas Detzel
Publikováno v:
ESSDERC
The present paper focuses on the system-level optimization of GaN technology for high voltage applications. We will show that a key requirement for the future success of the GaN technology is the full system-optimization achieved by a simultaneous op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c09eef02ce2909b7ad4e869c0061109f
https://doi.org/10.1109/essderc.2014.6948829
https://doi.org/10.1109/essderc.2014.6948829
Autor:
Oliver Häberlen, Gaudenzio Meneghesso, Gilberto Curatola, S. Lavanga, Andrea Cester, Giovanni Verzellesi, Matteo Meneghini, Riccardo Silvestri, Thomas Detzel, Gianmauro Pozzovivo, Enrico Zanoni
Threshold voltage instabilities observed in GaN HEMTs designed for power switching applications when submitted to either DC or pulsed testing are here presented and interpreted. Main results can be summarized as follows: i) two acceptor trap levels,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac1fbe4fa10a4bdbe54833467cd9e01b
https://hdl.handle.net/11380/1033715
https://hdl.handle.net/11380/1033715
Autor:
Antonello Tebano, G. Pasquini, G. Petrocelli, Giuseppe Balestrino, S. Lavanga, Pier Gianni Medaglia
Publikováno v:
International Journal of Modern Physics B. 14:2719-2724
The structural disorder in ( Ba 2 Cu 2 O 4+x )/( CaCuO 2) n superlattices with ultrathin individual layers was investigated. Numerical simulations of x-ray spectra were carried out following a kinematical approach in a simplified model structure. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::275e392e1b340a1e119fa9819ff8e8e8
https://doi.org/10.1142/s021797920000282x
https://doi.org/10.1142/s021797920000282x
Autor:
Antonello Tebano, Giuseppe Balestrino, G. Petrocelli, Andrey Varlamov, A. Paoletti, S. Lavanga, Matteo Salvato, G. Pasquini, Luigi Maritato, Pier Gianni Medaglia, Sergio Martellucci
Publikováno v:
Physical Review B. 62:9835-9839
The electrical transport properties of $[{\mathrm{BaCuO}}_{x}{]}_{2}/[{\mathrm{CaCuO}}_{2}{]}_{n}(\mathrm{C}\mathrm{B}\mathrm{C}\mathrm{C}\mathrm{O}\ensuremath{-}2\ifmmode\times\else\texttimes\fi{}n)$ underdoped high-temperature superconducting super
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb7a08942716cca3fedbbc0770cc1864
https://doi.org/10.1103/physrevb.62.9835
https://doi.org/10.1103/physrevb.62.9835
Autor:
Maria Cristina Rossi, F. Sicignano, Claudio Lanzieri, S. Lavanga, V. G. Ralchenko, Gennaro Conte, Antonio Cetronio, A. Vellei
Cr- and Al-gate MESFETs have been fabricated on deuterium-implanted polycrystalline diamond and characterized both in DC and RF regime. Their performances are compared with those of similar devices fabricated on plasma hydrogenated polycrystalline di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::832711130ec29574c1e8a9f133734c6a
https://hdl.handle.net/11590/140619
https://hdl.handle.net/11590/140619
Autor:
Andrey Varlamov, Giuseppe Balestrino, G. Petrocelli, S. Lavanga, A. Crisan, Pier Gianni Medaglia
Publikováno v:
Physical Review B. 60:10504-10507
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3f3305fb5fb5ac9edb36c75dc9d23ab
https://doi.org/10.1103/physrevb.60.10504
https://doi.org/10.1103/physrevb.60.10504
Publikováno v:
Physica C: Superconductivity. 313:70-78
In this paper, we present some transport measurements on artificially layered (BaCuO 2 ) 2 /(CaCuO 2 ) 2 superlattices, engineered by the pulsed laser deposition (PLD) technique, and having critical temperatures (zero resistance) of about 80 K. The e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f95e52789a0735eb48e4872e48be98a
https://doi.org/10.1016/s0921-4534(99)00006-4
https://doi.org/10.1016/s0921-4534(99)00006-4