Zobrazeno 1 - 10
of 72
pro vyhledávání: '"S. Lardenois"'
Autor:
Xavier Rottenberg, Tangla David Kongnyuy, Peter De Heyn, S. Lardenois, Roelof Jansen, Jeong Hwan Song
Publikováno v:
Journal of Lightwave Technology. 38:3273-3279
We report the design and experiment of advanced bends which are composed of widening width and varying radius. Advanced bends are based on silicon nitride waveguide for the wavelength of 850 nm and silicon waveguide for the wavelength of 1550 nm. The
Autor:
S. A. Srinivasan, Marianna Pantouvaki, Peter De Heyn, S. Lardenois, Joris Van Campenhout, Mathias Berciano
Publikováno v:
Journal of Lightwave Technology. 38:3044-3050
We report a silicon-contacted Ge/Si avalanche photodiode with RF gain of 11 and a bandwidth of 27 GHz at -12 V operating at 1310 nm. The device is fabricated in an established Si photonics platform without additional process complexity and contacts o
Autor:
Tangla David Kongnyuy, Xavier Rottenberg, S. Lardenois, Roelof Jansen, Jeong Hwan Song, Peter De Heyn
Publikováno v:
Scopus-Elsevier
A compact micro-ring resonator composed using low-loss advanced bends is reported. The effective radius of the ring is 2.5µm. The Q of 6200, finesse of 140, FSR of 35nm and ER of 15dB have been measured.
Autor:
Philippe Absil, S. Lardenois, Xin Yin, Johan Bauwelinck, Joris Lambrecht, J. Van Campenhout, S. A. Srinivasan, Mathias Berciano, M. Pantouvaki
Publikováno v:
2020 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC)
OFC
OFC
A hybrid BiCMOS-Silicon Photonics receiver with a waveguide-coupled Ge/Si avalanche photodiode is demonstrated with OMA sensitivities of −14.4dBm for error-free operation at 50 Gbps and -18.6 dBm under the KP4-FEC limit at 56 Gbps NRZ-OOK.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eee432a625dc176e665fc253ef6d42b4
https://biblio.ugent.be/publication/8675414/file/8675416
https://biblio.ugent.be/publication/8675414/file/8675416
Autor:
Younghyun Kim, Yoojin Ban, Marianna Pantouvaki, S. Lardenois, Didit Yudistira, Sanghyeon Kim, Joris Van Campenhout
Publikováno v:
2019 IEEE 16th International Conference on Group IV Photonics (GFP).
Carrier-depletion monolithic III-V/Si optical phase modulators are proposed and numerically investigated. Thanks to the larger carrier-induced refractive index change of the III-Vs compared to Si, the III-V/Si phase modulator is predicted to achieve
Autor:
Davide Guermandi, S. Van Huylenbroeck, Peter Verheyen, P. De Heyn, Ashwyn Srinivasan, Caroline Demeurisse, Julien Bertheau, Andy Miller, M. Pantouvaki, S. Lardenois, P. Nolmans, Michal Rakowski, Kenneth June Rebibis, S. Balakrishnan, Y. Ban, Xiao Sun, Philippe Absil, Nicolas Pantano, Junwen He, Pieter Bex, Alain Phommahaxay, J. De Coster, J. Van Campenhout, L. Bogaerts, Dimitrios Velenis
Publikováno v:
45th European Conference on Optical Communication (ECOC 2019).
Autor:
M. Pantouvaki, J. Van Campenhout, Gaspard Hiblot, S. Lardenois, Hongtao Chen, P. De Heyn, S. A. Srinivasan
Publikováno v:
45th European Conference on Optical Communication (ECOC 2019).
Autor:
Peter Verheyen, M. Pantouvaki, S. Lardenois, Michael Vanhoecke, Johan Bauwelinck, Y. Ban, J. Van Campenhout, Jochem Verbist
Publikováno v:
2019 IEEE Optical Interconnects Conference (OI)
BASE-Bielefeld Academic Search Engine
BASE-Bielefeld Academic Search Engine
We demonstrate 60Gb/s NRZ and 100Gb/s PAM4 data modulation with an O-band silicon ring modulator with only 1.6V pp and 2.5V pp drive swing respectively, leveraging the large modulation efficiency (55pm/V) and electro-optical bandwidth (35GHz) realize
Autor:
Yoojin Ban, Xiao Sun, Kenneth June Rebibis, L. Bogaerts, Michal Rakowski, Nicolas Pantano, Philippe Absil, Dimitrios Velenis, J. Van Campenhout, S. Lardenois, S. Balakrishnan, J. De Coster, S. Van Huylenbroeck, Caroline Demeurisse, Pieter Bex, Andy Miller, Bradley Snyder, M. Pantouvaki, P. Nolmans, P. De Heyn, Fumihiro Inoue, Ashwyn Srinivasan, Peter Verheyen
Publikováno v:
2018 IEEE Symposium on VLSI Technology.
We demonstrate a microbump flip-chip integrated 14nm-FinFET CMOS-Silicon Photonics (SiPh) technology platform enabling ultra-low power Optical I/O transceivers with 1.6Tb/s/mm2 bandwidth density. The transmitter combines a differential FinFET driver
Autor:
Andy Miller, S. Balakrishnan, Sofie Janssen, S. Lardenois, A. Lesniewska, Guy Lepage, Kristof Croes, Joris Van Campenhout, Brad Snyder, Philippe Absil, Ashwyn Srinivasan, Yoojin Ban, Peter Verheyen, Marianna Pantouvaki, Peter De Heyn, Negin Golshani, Jeroen De Coster
Publikováno v:
OFC
Scopus-Elsevier
Optical Fiber Communication Conference
Scopus-Elsevier
Optical Fiber Communication Conference
We discuss recent progress in the performance of modulators and photodetectors co-integrated in a silicon photonics platform, and capable of operation in the O-band or C-band at 56Gb/s single-lane NRZ data rates and beyond.