Zobrazeno 1 - 10
of 107
pro vyhledávání: '"S. Lankes"'
Akademický článek
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Autor:
A Laha, L Fendrich, H Hempe, Wendelin Schramm, J Suleder, B Baumann, S Lankes, J Rickmann, Fabian Sailer, M Westers, B Christophidis, H Reimchen, P Seitz
Publikováno v:
Diabetologie und Stoffwechsel. 12:S1-S84
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::385219e9db624f0b191b9a3b70933852
https://doi.org/10.1055/s-0037-1601719
https://doi.org/10.1055/s-0037-1601719
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
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Publikováno v:
Journal of Crystal Growth. 159:480-484
MBE-grown ZnCdSe ZnSe and MOVPE-grown ZnSe ZnSSe single quantum wells (SQW) were investigated by photoreflectance (PR) and photoluminescence excitation (PLE) spectroscopy. For various compositions a set of quantum well structures with different well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e800bb3b8c2e5736db2d73f7f3730f3
https://doi.org/10.1016/0022-0248(95)00637-0
https://doi.org/10.1016/0022-0248(95)00637-0
Autor:
Wolfgang Gebhardt, T. Reisinger, M. Kastner, M. Meier, Andreas Rosenauer, F. Franzen, S. Lankes
Publikováno v:
Journal of Crystal Growth. 159:510-513
ZnCdSe ZnSe quantum wells (QW) were grown with molecular beam epitaxy (MBE) on GaAs(001) substrates cleaned with hydrogen plasma. Reflection high-energy electron diffraction (RHEED) was used for in-situ growth control of the QW structures. A quantita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd1838dcd6312c940599ae66c1bc9398
https://doi.org/10.1016/0022-0248(95)00808-x
https://doi.org/10.1016/0022-0248(95)00808-x
Publikováno v:
Scopus-Elsevier
A series of ZnSe/ZnS 0.25 Se 0.75 single quantum wells (SQW) of various well thicknesses are grown on (001) GaAs with low pressure metalorganic vapour phase epitaxy (MOVPE). Photoreflectance measurements (PR) show pronounced structures which are assi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab17c6214ed9003c302aace2ae34638d
https://doi.org/10.1002/pssa.2211520113
https://doi.org/10.1002/pssa.2211520113
Autor:
Pasquale Pavone, Ulrich Rössler, Wolfgang Gebhardt, G. Schötz, A. Naumov, H. Stanzl, K. Wolf, B. Freytag, S. Jilka, S. Lankes
Publikováno v:
Solid State Communications. 94:103-106
We present the results of experimental investigations on bandgap bowing and spontaneous ordering in MOVPE grown ZnSexTe1−x. The bowing parameter of b = 1.40 ± 0.05eV found from different optical measurements on our epilayers is slightly larger tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9514becc921ba6890a54dbdeefe00e1b
https://doi.org/10.1016/0038-1098(95)00035-6
https://doi.org/10.1016/0038-1098(95)00035-6
Publikováno v:
Journal of Crystal Growth. 138:595-600
We present the optical characterization of MOVPE grown ZnSe x Te 1-x epilayers with 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc6d5b0b1e100c815fed816aa07f5e63
https://doi.org/10.1016/0022-0248(94)90875-3
https://doi.org/10.1016/0022-0248(94)90875-3
Publikováno v:
Journal of Applied Physics. 74:6178-6185
ZnSexTe1−x epilayers were investigated by means of luminescence, reflectivity, and temperature dependence in the concentration range 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0f6a3cd4bb51c4e5dc298739e80fdbb
https://doi.org/10.1063/1.355186
https://doi.org/10.1063/1.355186
Autor:
W. Kuhn, A. Naumov, M. Wörz, Wolfgang Gebhardt, K. Wolf, T. Reisinger, S. Lankes, H. Stanzl, Hans Peter Wagner
Publikováno v:
Physica B: Condensed Matter. 185:169-173
The near-gap photoluminescence (PL) of MOVPE ZnTe epilayers grown on (0 0 1) GaAs substrates has been extensively studied using resonant-excitation methods. Heteroepitaxial ZnTe layers show a small biaxial strain which splits excitonic transitions. W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4221f734285a01180e551fc29222c8bf
https://doi.org/10.1016/0921-4526(93)90233-v
https://doi.org/10.1016/0921-4526(93)90233-v