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pro vyhledávání: '"S. Lahlali"'
Akademický článek
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Autor:
S. Lahlali, M. Ibannain, K. Djessas, M. Belaqziz, Kahina Medjnoun, Lahcen Essaleh, S. Amhil, O. Abounachit, A. Bouloufa, H. Chehouani
Publikováno v:
Journal of Electronic Materials. 49:7518-7525
CuIn0.7Ga0.3Se2 (CIGS) ingots were prepared by reaction of high-purity elements in stoichiometric proportions. The direct melting of elements was carried out using an original and low-cost process. The structural and morphological properties of the o
Akademický článek
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Publikováno v:
Journal of Alloys and Compounds. 688:210-215
Both complex impedance and electric modulus formalisms are considered to study the contribution of dominant electrical conduction mechanisms in bulk p-type CuIn 3 Se 5 semiconductor. An equivalent electrical circuit has been proposed to explain the i
Publikováno v:
Optical Materials
Optical Materials, 2018, 86, pp.343-351. ⟨10.1016/j.optmat.2018.10.020⟩
Optical Materials, Elsevier, 2018, 86, pp.343-351. ⟨10.1016/j.optmat.2018.10.020⟩
Optical Materials, 2018, 86, pp.343-351. ⟨10.1016/j.optmat.2018.10.020⟩
Optical Materials, Elsevier, 2018, 86, pp.343-351. ⟨10.1016/j.optmat.2018.10.020⟩
JIF=2.687; International audience; The objective of this paper is to improve the sensitivity and the performance of nano-sensors by using the simulation, which was done by finite element method in 2D plasmonic nanostructures. Meanwhile, the effects o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a305c6bc31f32e73582642500e51d0bb
https://hal.science/hal-03185124/document
https://hal.science/hal-03185124/document
Publikováno v:
Physica B: Condensed Matter. 604:412689
Variable range hopping conduction process of Shklovskii-Efros type is identified, for the first time, in CuIn0.7Ga0.3Se2 bulk material in the temperature range [-190 °C, −10 °C]. Two different methods are considered to confirm this mechanism. The
Autor:
B. Viallet, S. Cayez, M. Belaqziz, K. Djessas, Lahcen Essaleh, A. Alimoussa, S. Lahlali, J.L. Gauffier, H. Chehouani
Publikováno v:
Physica B: Condensed Matter
Physica B: Condensed Matter, Elsevier, 2017, 526, pp.54-58
Physica B: Condensed Matter, 2017, 526, pp.54-58
Physica B: Condensed Matter, Elsevier, 2017, 526, pp.54-58
Physica B: Condensed Matter, 2017, 526, pp.54-58
Dielectric properties of the ternary semiconductor compound Cu 2 SnS 3 is studied for the first time in the high temperature range from 300 °C to 440 °C with the frequency range 1 kHz to 1 MHz. The dielectric constant e ′ and dielectric loss tan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b7cdc74a10f57899145d39eaa865969
https://hal.insa-toulouse.fr/hal-02049178
https://hal.insa-toulouse.fr/hal-02049178
Akademický článek
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Publikováno v:
2016 International Renewable and Sustainable Energy Conference (IRSEC).
Conduction mechanism was investigated from DC and AC conductivity measurements in the thin film ternary semiconductor Cu 2 SnS 3 compound. The electrical properties of this material were analyzed by impedance spectrometry (IS) in the frequency range
Publikováno v:
Physica B: Condensed Matter
Physica B: Condensed Matter, Elsevier, 2016, 500, pp.161-164
Physica B: Condensed Matter, 2016, 500, pp.161-164
Physica B: Condensed Matter, Elsevier, 2016, 500, pp.161-164
Physica B: Condensed Matter, 2016, 500, pp.161-164
The dynamic electrical conduction in the bulk ternary semiconductor compound Cu2SnS3 is studied for the first time in the high temperature range from 300 °C to 440 °C in the frequency range 1 kHz–1 MHz. New activation energy for conduction mechan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8144f1495dc8e6443c8a3d0166277950
https://hal.insa-toulouse.fr/hal-02049171
https://hal.insa-toulouse.fr/hal-02049171