Zobrazeno 1 - 3
of 3
pro vyhledávání: '"S. L. Titcomb"'
Publikováno v:
IBM Journal of Research and Development. 34:243-249
A technique is introduced for measuring electron and hole mobilities as a function of temperature and normal field in inverted silicon surfaces. We also introduce a new definition of threshold voltage which allows the method to measure mobility indep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69670f34c21a280c054151ecf5e690ae
https://doi.org/10.1147/rd.342.0243
https://doi.org/10.1147/rd.342.0243
Publikováno v:
Journal of Electronic Materials. 14:343-366
We have investigated the effects of different annealing treatments on silicon dioxide films produced from the reaction of dichlorosilane and nitrous oxide at 700° C. The electrical quality of these LPCVD films was evaluated by measuring oxide charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::539e5b7545716dddb0cddb4de3e478ca
https://doi.org/10.1007/bf02661227
https://doi.org/10.1007/bf02661227
Publikováno v:
Surfaces and Interfaces in Ceramic and Ceramic — Metal Systems ISBN: 9781468439496
SiO2/Si samples prepared in 2% and 4% hcl/O2 mixtures at 1200°C have been annealed in H2O/N2 ambients at 1200°C. The anneals ranged up to 16 hrs in ambients with 4 or 40 ppm H2O in N2. Rutherford backscattering measurements have been made to determ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6584849e19c6e2195deb36b9ecec57ce
https://doi.org/10.1007/978-1-4684-3947-2_32
https://doi.org/10.1007/978-1-4684-3947-2_32
