Zobrazeno 1 - 10
of 72
pro vyhledávání: '"S. L. Titcomb"'
Publikováno v:
IBM Journal of Research and Development. 34:243-249
A technique is introduced for measuring electron and hole mobilities as a function of temperature and normal field in inverted silicon surfaces. We also introduce a new definition of threshold voltage which allows the method to measure mobility indep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69670f34c21a280c054151ecf5e690ae
https://doi.org/10.1147/rd.342.0243
https://doi.org/10.1147/rd.342.0243
Publikováno v:
Journal of Electronic Materials. 14:343-366
We have investigated the effects of different annealing treatments on silicon dioxide films produced from the reaction of dichlorosilane and nitrous oxide at 700° C. The electrical quality of these LPCVD films was evaluated by measuring oxide charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::539e5b7545716dddb0cddb4de3e478ca
https://doi.org/10.1007/bf02661227
https://doi.org/10.1007/bf02661227
Publikováno v:
Journal of Applied Physics; 2/21/2023, Vol. 133 Issue 7, p1-18, 18p
Publikováno v:
Surfaces and Interfaces in Ceramic and Ceramic — Metal Systems ISBN: 9781468439496
SiO2/Si samples prepared in 2% and 4% hcl/O2 mixtures at 1200°C have been annealed in H2O/N2 ambients at 1200°C. The anneals ranged up to 16 hrs in ambients with 4 or 40 ppm H2O in N2. Rutherford backscattering measurements have been made to determ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6584849e19c6e2195deb36b9ecec57ce
https://doi.org/10.1007/978-1-4684-3947-2_32
https://doi.org/10.1007/978-1-4684-3947-2_32
Publikováno v:
Journal of Applied Physics; 10/21/2021, Vol. 130 Issue 15, p1-9, 9p
Publikováno v:
Physica Status Solidi (B); Nov2023, Vol. 260 Issue 11, p1-12, 12p
Autor:
SZCZYRBAK, MAGDALENA
Publikováno v:
Studia Linguistica Universitatis Iagellonicae Cracoviensis; 2023, Vol. 140 Issue 1, p67-93, 27p
Autor:
Talukder, A. B. M. Hasan, Smith, Brittany, Akbulut, Mustafa, Dirisaglik, Faruk, Silva, Helena, Gokirmak, Ali
Publikováno v:
IEEE Transactions on Electron Devices; Aug2022, Vol. 69 Issue 8, p4138-4143, 6p
Publikováno v:
IEEE Transactions on Components, Packaging & Manufacturing Technology; Aug2021, Vol. 11 Issue 8, p1267-1281, 15p
Autor:
Wen, Feng, Yuan, Joseph, Wickramasinghe, Kaushini S., Mayer, William, Shabani, Javad, Tutuc, Emanuel
Publikováno v:
IEEE Transactions on Electron Devices; Apr2021, Vol. 68 Issue 4, p1524-1529, 6p