Zobrazeno 1 - 10
of 35
pro vyhledávání: '"S. L. Rumyantsev"'
Publikováno v:
Kazan medical journal. 81:309-312
The computer tomographic, angiographic and scintigraphic examination of patients with renal and adrenal tumprs is performed and their semiotics is covered comprehensively. The computer tomographic densitometry makes it possible to perform the differe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f528d78951de92461750731d24cda620
https://doi.org/10.17816/kazmj99942
https://doi.org/10.17816/kazmj99942
Autor:
S. L. RUMYANTSEV, N. PALA, M. S. SHUR, M. E. LEVINSHTEIN, P. A. IVANOV, M. ASIF KHAN, G. SIMIN, J. YANG, X. HU, A. TARAKJI, R. GASKA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74006583d402dacd103881a25b79163c
https://doi.org/10.1142/9789811252143_0039
https://doi.org/10.1142/9789811252143_0039
Autor:
Vitalii V. Kozlovski, M.E. Levinshtein, S. L. Rumyantsev, Alexander A. Lebedev, John W. Palmour
Publikováno v:
Materials Science Forum. 924:605-608
Electron irradiation of high voltage Ni/4H-SiC Schottky diodes with the dose Φ=(0.2-7)×1016cm-2 led to increase in the base resistance, appearance of slow relaxation processes at extremely small currents, and increase of the low frequency noise. On
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e12789b62748fd54c5effd52afaed298
https://doi.org/10.4028/www.scientific.net/msf.924.605
https://doi.org/10.4028/www.scientific.net/msf.924.605
Publikováno v:
Sensor Letters. 14:588-591
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba29cbe4919d8925621be2d3a55a1d54
https://doi.org/10.1166/sl.2016.3657
https://doi.org/10.1166/sl.2016.3657
Autor:
Dmytro B. But, K. Szkudlarek, Czeslaw Skierbiszewski, Wojciech Knap, Grzegorz Muziol, Grzegorz Cywiński, A. Khachapuridze, P. Kruszewski, S. L. Rumyantsev, I. Yahniuk
Publikováno v:
2017 International Conference on Noise and Fluctuations (ICNF).
Schottky diodes are key elements of RF and terahertz electronics. The design of the lateral Schottky with the contact directly to the side of the electron 2D channel in GaN/AlGaN system provides an advantage of extremely small capacitance and series
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acab522134e96ab6522ef4627fca162b
https://doi.org/10.1109/icnf.2017.7985994
https://doi.org/10.1109/icnf.2017.7985994
Autor:
S. L. Rumyantsev, M E Levinshtein, Alexander A. Lebedev, John W. Palmour, Vitali V. Kozlovski
Publikováno v:
Journal of Applied Physics. 123:024502
The current voltage characteristics and the low-frequency noise in high voltage 4H-SiC junction barrier Schottky diodes irradiated with high energy (15 MeV) protons were studied at different temperatures and irradiation doses Φ from 3 × 1012 cm−2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b93a48d41a2217046277ebc15e2c0005
https://doi.org/10.1063/1.5018043
https://doi.org/10.1063/1.5018043
Autor:
D. M. Yermolayev, E. A. Polushkin, S. Yu. Shapoval, V. V. Popov, K. V. Marem'yanin, V. I. Gavrilenko, N. A. Maleev, V. M. Ustinov, V. E. Zemlyakov, V. I. Yegorkin, V. A. Bespalov, A. V. Muravjov, S. L. Rumyantsev, M. S. Shur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6aec66d6c788f838acd0809b99cd9a22
https://doi.org/10.1142/9789814725200_0002
https://doi.org/10.1142/9789814725200_0002
Publikováno v:
International Journal of High Speed Electronics and Systems. 15:931-996
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b2ade5f7496b5846e2a726e503a0b5a
https://doi.org/10.1142/s0129156405003466
https://doi.org/10.1142/s0129156405003466
Autor:
S. L. Rumyantsev, John W. Palmour, M E Levinshtein, Alexander A. Lebedev, Vitali V. Kozlovski
Publikováno v:
Applied Physics Letters. 110:133501
The low-frequency noise in high voltage Ni/4H-SiC Schottky diodes irradiated with high energy (0.9 MeV) electrons was studied in the frequency range from 1 Hz to 50 kHz, temperature interval 295–410 K, and irradiation dose Φ from 0.2 × 1016 cm−
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29d919bcaed1b4607cd0bfa99afbdfcd
https://doi.org/10.1063/1.4979411
https://doi.org/10.1063/1.4979411
Autor:
S. L. Rumyantsev, M E Levinshtein, Alexander A. Lebedev, Vitalii V. Kozlovski, John W. Palmour
Publikováno v:
Applied Physics Letters. 110:083503
We report the results of the high energy (0.9 MeV) electron irradiation impact on the electrical properties of high voltage Ni/4H-SiC Schottky diodes. Within the range of the irradiation dose from 0.2 × 1016 cm−2 to 7 × 1016 cm−2, electron irra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::264b699dc3420432d884b4c1acc844ba
https://doi.org/10.1063/1.4977095
https://doi.org/10.1063/1.4977095