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pro vyhledávání: '"S. L. Rommel"'
Autor:
R. Krom, D. J. Pawlik, S. Muhkerjee, S. Pandharpure, S. K. Kurinec, S-Y. Park, R. Yu, R. Anisha, P. R. Berger, P. E. Thompson, S. L. Rommel
Publikováno v:
2007 International Semiconductor Device Research Symposium.
This study reports a Si RITD whose characteristics improve with increasing anneal time, resulting in a peak current density (JP) and PVCR up to 2.97 kA/cm2 and 3.08, respectively.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16ae19b91e6660ff0d07f8335cf122a5
https://doi.org/10.1109/isdrs.2007.4422468
https://doi.org/10.1109/isdrs.2007.4422468
