Zobrazeno 1 - 10
of 50
pro vyhledávání: '"S. Kreutzmann"'
Autor:
Jörg Fricke, Md. Jarez Miah, S. Kreutzmann, Paul Crump, M. Wilkens, Andrea Knigge, Hans Wenzel
Publikováno v:
2021 27th International Semiconductor Laser Conference (ISLC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acd949ee46320673ef9ca34b958443af
https://doi.org/10.1109/islc51662.2021.9615726
https://doi.org/10.1109/islc51662.2021.9615726
Publikováno v:
2021 IEEE Photonics Conference (IPC).
Epitaxial design development in 780 nm diode lasers for lower loss and lower bias-driven leakage enables increases in power (to 210 W) and conversion efficiency (to 57% at 60 W) in high repetition-rate (10 ms, 10 Hz), wide-aperture (1200 μm) devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9b482c28e5c0752d0afcf4c680880db
https://doi.org/10.1109/ipc48725.2021.9593003
https://doi.org/10.1109/ipc48725.2021.9593003
Autor:
S. Kreutzmann, Markus Weyers, Jens Rass, Sven Einfeldt, Michael Kneissl, Tim Kolbe, Johannes Glaab, Hyun Kyong Cho, N. Lobo Ploch, Jan Ruschel, Arne Knauer
Publikováno v:
IEEE Photonics Technology Letters. 31:529-532
We report on the degradation of the electro-optical parameters of (In)AlGaN-based ultraviolet-B light-emitting diodes (LEDs) stressed at a constant dc current of 100 mA and the simultaneous change in the depth profile of the hydrogen (H) concentratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::715b4261423b30ac4d040d6986d83fed
https://doi.org/10.1109/lpt.2019.2900156
https://doi.org/10.1109/lpt.2019.2900156
Autor:
Andreas Wicht, Hans Wenzel, P. Della Casa, S. Wenzel, Olaf Brox, S. Nechayev, S. Kreutzmann, Bassem Arar, Andrea Knigge
Publikováno v:
Conference on Lasers and Electro-Optics.
We present a novel approach for GaAs-based DBR diode lasers with an extended cavity. The developed chips exhibit a record small 3 dB linewidth of 25 kHz @ 1 ms at the wavelength of 1064 nm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2603ded73aa7eaf6b1c01cd5aa736605
https://doi.org/10.1364/cleo_at.2021.ath4g.3
https://doi.org/10.1364/cleo_at.2021.ath4g.3
Background: Microalbuminuria is an early sign of kidney disease in people with diabetes and indicates increased risk of cardiovascular disease. We tested whether a urinary proteomic risk classifier (CKD273) score was associated with development of mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::eeb27409505a02b950c484786fe72848
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3077412
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3077412
Autor:
J. Rieprich, S. Knigge, G. Erbert, Arnim Ginolas, Paul Crump, Bernd Eppich, S. Kreutzmann, C. Frevert, R. Platz
Publikováno v:
Components and Packaging for Laser Systems IV.
Diode lasers pump sources for future high-energy-class laser systems based on Yb-doped solid state amplifiers must deliver high optical intensities, high conversion efficiency (ηE = > 50%) at high repetition rates (f = 100 Hz) and long pulse widths
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1a22a089de3c19095cd43651749ac64
https://doi.org/10.1117/12.2293512
https://doi.org/10.1117/12.2293512
Autor:
Patrick Leisching, Gunnar Blume, J. Pohl, S. Kreutzmann, Christian Kürbis, Christian Nölleke, Arnim Ginolas, Katrin Paschke, Julian Hofmann, G. Erbert, Bernd Eppich, Peter Ressel, Alexander Sahm, David Feise
Publikováno v:
2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).
Gas lasers such as the HeNe-laser at 633 nm or the Kr-laser at 647 nm are still widespread in use for applications that require visible, highly coherent radiation. Replacing the gas lasers with semiconductor lasers that provide a beam with similar ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbb0cfe8a34bcd310534ec85c8b84ed4
https://doi.org/10.1109/cleoe-eqec.2017.8086387
https://doi.org/10.1109/cleoe-eqec.2017.8086387
Autor:
Olaf Krüger, Martin Wienold, Deepak Prasai, Klaus Biermann, W. Pittroff, Rajesh Sharma, Leonhard Dr. Weixelbaum, Götz Erbert, Frank Schnieder, Holger T. Grahn, S. Kreutzmann, Günther Tränkle, Wilfred John, Lutz Schrottke
Publikováno v:
IEEE Photonics Technology Letters. 25:1570-1573
First results on epitaxial-side (epi-down) mounting of terahertz quantum-cascade lasers (QCLs) on sapphire submounts using indium solder are presented. The single-plasmon ridge waveguide lasers emit in the range 3.1–3.3 THz. An epi-down mounting sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65628efe835d396eb4407939fec58b0c
https://doi.org/10.1109/lpt.2013.2271323
https://doi.org/10.1109/lpt.2013.2271323
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Akademický článek
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