Zobrazeno 1 - 10
of 17
pro vyhledávání: '"S. Kraeusel"'
Autor:
F. Mehnke, A. Alasmari, T. Wernicke, Aimo Winkelmann, Elena Pascal, L. Jiu, S. Hagedorn, Philip A. Shields, B.M. Jablon, W. Avis, Paul R. Edwards, Peter J. Parbrook, M. Nouf-Allehiani, Y. Gong, C. Kuhn, Yonghao Zhang, Gunnar Kusch, Robert W. Martin, Michael Kneissl, Jochen Bruckbauer, Benjamin Hourahine, S. Vespucci, Tao Wang, S. Kraeusel, J. Enslin, R. McDermott, P. M. Coulon, G. Naresh-Kumar, Carol Trager-Cowan, M. D. Smith, Sebastian Walde, R. M. Smith, Markus Weyers, Roy L. Johnston, Arne Knauer, Ken Mingard, David M. Thomson
In this article we describe the scanning electron microscopy (SEM) techniques of electron channelling contrast imaging and electron backscatter diffraction. These techniques provide information on crystal structure, crystal misorientation, grain boun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec5daaf27a3bb173a9ce0f9885b89bc6
https://strathprints.strath.ac.uk/74728/7/Trager_Cowan_etal_IOPCS_MSE_2020_Advances_in_electron_channelling_contrast_imaging_and_electron_backscatter_diffraction.pdf
https://strathprints.strath.ac.uk/74728/7/Trager_Cowan_etal_IOPCS_MSE_2020_Advances_in_electron_channelling_contrast_imaging_and_electron_backscatter_diffraction.pdf
Autor:
Arne Knauer, Christian Kuhn, Marcus Weyers, M. D. Smith, Benjamin Hourahine, S. Hagedorn, M. Nouf-Allehiani, G. Naresh-Kumar, Elena Pascal, David M. Thomson, Peter J. Parbrook, Y. Gong, Sebastian Walde, A Kotzai, S. Kraeusel, R. M. Smith, W. Avis, Tim Wernicke, Gunnar Kusch, Robert W. Martin, Tao Wang, L. Jiu, Aimo Winkelmann, Johannes Enslin, R. McDermott, A. Alasmari, Yonghao Zhang, Frank Mehnke, Michael Kneissl, Jochen Bruckbauer, Jie Bai, Paul R. Edwards, Philip A. Shields, Gergely Ferenczi, S. Vespucci, P. M. Coulon, Carol Trager-Cowan
Publikováno v:
Semiconductor Science and Technology. 35:054001
The scanning electron microscopy techniques of electron backscatter diffraction (EBSD), electron channelling contrast imaging (ECCI) and cathodoluminescence (CL) hyperspectral imaging provide complementary information on the structural and luminescen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::badc5c4ecafcbc98c0299df4e120403a
https://doi.org/10.1088/1361-6641/ab75a5
https://doi.org/10.1088/1361-6641/ab75a5
Autor:
M. Nouf-Allehiani, S. Vespucci, R. M. Smith, A. Alasmari, Y. Gong, Yonghao Zhang, W. Avis, Carol Trager-Cowan, Frank Mehnke, Tim Wernicke, Tao Wang, David M. Thomson, Aimo Winkelmann, L. Jiu, Philip A. Shields, M. D. Smith, Benjamin Hourahine, Gunnar Kusch, V. Kueller, Christian Kuhn, Robert W. Martin, Lucia Spasevski, Johannes Enslin, S. Hagedorn, G. Naresh-Kumar, Paul R. Edwards, Sebastian Walde, S. Kraeusel, Michael Kneissl, Marcus Weyers, Roy L. Johnston, Peter J. Parbrook, Jochen Bruckbauer, Pierre-Marie Coulon, Elena Pascal, Arne Knauer
Publikováno v:
Photonics Research
In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2de63e87decea2c17bba84400892fe5d
https://doi.org/10.1364/prj.7.000b73
https://doi.org/10.1364/prj.7.000b73
Autor:
Menno J. Kappers, Colin J. Humphreys, Jochen Bruckbauer, Rachel A. Oliver, Stephen Lovelock, Paul R. Edwards, Robert W. Martin, Carol Trager-Cowan, Michelle A. Moram, S. Kraeusel, G. Naresh-Kumar, Ben Hourahine
Publikováno v:
Microscopy and Microanalysis
We combine two scanning electron microscopy techniques to investigate the influence of dislocations on the light emission from nitride semiconductors. Combining electron channeling contrast imaging and cathodoluminescence imaging enables both the str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac2d713e13552d197c368c7808aee8f8
https://doi.org/10.1017/s1431927613013755
https://doi.org/10.1017/s1431927613013755
Autor:
S. Kraeusel, Benjamin Hourahine
Publikováno v:
physica status solidi (a). 209:71-74
The promise of the broad range of direct band gaps of the {Al,Ga,In}N system is limited by the crystal quality of current material. As grown defect densities of InN, when compared with the more mature GaN, are extremely high and InN is strongly influ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6eaa3dbaae22e3d6643037a19eb926f
https://doi.org/10.1002/pssa.201100097
https://doi.org/10.1002/pssa.201100097
Autor:
E. D. Le Boulbar, Arantxa Vilalta-Clemente, Benjamin Hourahine, Ken Mingard, Angus J. Wilkinson, Val O'Shea, Colin J. Humphreys, Jochen Bruckbauer, Peter J. Parbrook, Rachel A. Oliver, N. Allehiani, A. P. Day, G. Naresh-Kumar, Gunnar Kusch, Robert W. Martin, David M. Thomson, Paul R. Edwards, S. Kraeusel, Dzmitry Maneuski, Menno J. Kappers, Aimo Winkelmann, Michelle A. Moram, S. Vespucci, Carol Trager-Cowan, Philip A. Shields, C. Mauder
Publikováno v:
Trager-Cowan, C, Naresh-Kumar, G, Allehiani, N, Kraeusel, S, Hourahine, B, Vespucci, S, Thomson, D, Bruckbauer, J, Kusch, G, Edwards, P R, Martin, R W, Mauder, C, Day, A P, Winkelmann, A, Vilalta-Clemente, A, Wilkinson, A J, Parbrook, P J, Kappers, M J, Moram, M A, Oliver, R A, Humphreys, C J, Shields, P, Le Boulbar, E D, Maneuski, D, O'Shea, V & Mingard, K P 2014, ' Electron channeling contrast imaging of defects in III-nitride semiconductors ', Microscopy and Microanalysis, vol. 20, no. 3, pp. 1024-1025 . https://doi.org/10.1017/S1431927614006849
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7da986e35c316f866e3db658824353d7
https://purehost.bath.ac.uk/ws/files/126389979/ECCI_Nitride_defects_M_M2014.pdf
https://purehost.bath.ac.uk/ws/files/126389979/ECCI_Nitride_defects_M_M2014.pdf
Autor:
Carol Trager-Cowan, A. P. Day, Jochen Bruckbauer, Michael Heuken, Holger Kalisch, Benjamin Hourahine, S. Kraeusel, C. Giesen, G. Naresh-Kumar, Achim Trampert, Paul R. Edwards, C. Mauder, Andrei Vescan, K. Wang
Publikováno v:
Applied Physics Letters. 102:142103
Threading dislocations, stacking faults, and associated partial dislocations significantly degrade the optical and electrical properties of materials such as non-polar III-nitride semiconductor thin films. Stacking faults are generally difficult to d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72744ee122e1cb6d045f1f13d24e1473
https://doi.org/10.1063/1.4801469
https://doi.org/10.1063/1.4801469
Autor:
Filip Tuomisto, Arantxa Vilalta-Clemente, William J. Schaff, S. Kraeusel, Pierre Ruterana, Christian Rauch, Ben Hourahine, Bertrand Lacroix
Publikováno v:
Applied Physics Letters. 100:091907
The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6x10E20cm-3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::377292cc86d4b5d2eb577024d2695ade
https://doi.org/10.1063/1.3688038
https://doi.org/10.1063/1.3688038
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