Zobrazeno 1 - 10
of 79
pro vyhledávání: '"S. Kozhukhov"'
Autor:
A. S. Tarasov, V. A. Golyashov, I. O. Akhundov, D. V. Ishchenko, A. S. Kozhukhov, K. A. Kokh, O. E. Tereshchenko
Publikováno v:
Russian Journal of Physical Chemistry B. 16:479-482
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5be031ad8e71680d7613e1ff0c30e3b
https://doi.org/10.1134/s1990793122030241
https://doi.org/10.1134/s1990793122030241
Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers
Publikováno v:
Semiconductors. 56:352-359
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::131bb65571aff0c8e2d157fb6bdb244d
https://doi.org/10.1134/s1063782622070077
https://doi.org/10.1134/s1063782622070077
Autor:
A. S. Tarasov, N. N. Mikhailov, S. A. Dvoretsky, R. V. Menshchikov, I. N. Uzhakov, A. S. Kozhukhov, E. V. Fedosenko, O. E. Tereshchenko
Publikováno v:
Semiconductors. 55:S62-S66
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::283484fec07e0c81435531df8316a187
https://doi.org/10.1134/s1063782621090220
https://doi.org/10.1134/s1063782621090220
Autor:
K V Feklistov, A G Lemzyakov, I P Prosvirin, A A Gismatulin, A A Shklyaev, Y A Zhivodkov, G К Krivyakin, A I Komonov, А S Kozhukhov, E V Spesivsev, D V Gulyaev, D S Abramkin, A M Pugachev, D G Esaev, G Yu Sidorov
Publikováno v:
Materials Research Express, Vol 7, Iss 12, p 125903 (2020)
RF magnetron-deposited Si\In _2 O _3 :Er films have the structure of the single-crystalline bixbyite bcc In _2 O _3 nanowires bunched into the columns extended across the films. The obtained films have a typical In _2 O _3 optical band gap of 3.55 eV
Externí odkaz:
https://doaj.org/article/fb6f878faf224a02bcb567b91d396ae6
Publikováno v:
AIP Advances, Vol 8, Iss 2, Pp 025113-025113-6 (2018)
In this paper, the initial stages of local anodic oxidation (LAO) process initiated by AFM probe are studied on the wide (∼100μm) terraces of the atomic-smooth Si (111) surface when creating dense array of local oxidation points. The dependence of
Externí odkaz:
https://doaj.org/article/b57ab3c194304da1baa62729bd9fe903
Autor:
Dmitriy D. Bashkatov, Denis S. Milakhin, Timur V. Malin, Vladimir I. Vdovin, Anton S. Kozhukhov, Konstantin S. Zhuravlev
Publikováno v:
2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55dc5866fd6765060a31b0e1e4bde96c
https://doi.org/10.1109/edm55285.2022.9855155
https://doi.org/10.1109/edm55285.2022.9855155
Autor:
Timur V. Malin, K. S. Zhuravlev, A. S. Kozhukhov, I. D. Loshkarev, D. S. Milakhin, Vladimir G. Mansurov, D. Yu. Protasov
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 56:485-491
It is demonstrated that it is possible to use the ammonia molecular beam epitaxy for growing structurally perfect high-ohmic GaN layers which allow generating SiN/Al(Ga)N/GaN heterostructures for transistors with a high mobility of electrons. The gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db954545cfde49717e03aac5040d43b8
https://doi.org/10.3103/s8756699020050064
https://doi.org/10.3103/s8756699020050064
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 56:533-544
The article presents how the understanding of the fundamental processes of self-organization and morphological transformations of the atomically clean Si(111) surface as a result of the study using in situ ultrahigh vacuum reflection electron microsc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8546b0a2732a30de5724506a77b2ac77
https://doi.org/10.3103/s8756699020050118
https://doi.org/10.3103/s8756699020050118
Autor:
O. V. Bachynskyi, S Kozhukhov, D. O. Bilyi, O.I. Irkin, Ye. B. Yershova, O. M. Parkhomenko, Ya. M. Lutay, A. O. Stepura
Publikováno v:
Ukrainian Journal of Cardiology. 27:13-26
The aim – to determine the prevalence and major risk factors of intramyocardial hemorrhage (IMH) in timely revascularized patients with ST elevation myocardial infarction (STEMI), and to evaluate its importance for the development of postinfarction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::853c356634fe78f1ac0fbcf1fdd463d7
https://doi.org/10.31928/1608-635x-2020.1.1326
https://doi.org/10.31928/1608-635x-2020.1.1326
Background Cardio-vascular death (CVD) in patients with acute myocardial infarction (AMI) significantly decreased due to reperfusion and advances in pharmacotherapy. Acute heart failure (AHF) remains a common and unfavorable AMI-related complication.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::606f9f56460ca128a7b61f37392460be
