Výsledky vyhledávání - "S. Koveshnikov"

Akademický článek

The Physical mechanisms of gettering properties of nickel clusters in silicon solar cells

Autor: Zoir Kenzhaev, Kh. Iliev, K. Ismailov, G. Mavlonov, S. Koveshnikov, B. Ismaylov, B. Isamov

Publikováno v: Physical Sciences and Technology, Vol 11, Iss 1-2 (2024)

This study demonstrates that the concentration of nickel atoms near the surface of solar cells is 2–3 orders of magnitude higher than in the bulk material, significantly enhancing the gettering rate at the surface. Using IR-microscopy, SEM, and SIM

Externí odkaz: https://doaj.org/article/e4c6876fda254e588995e0fb0d5f8f10

Zobrazit plný text záznamu

Akademický článek

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Large scalable graphene oxide films with resistive switching for non volatile memory applications

Autor: Olesya O. Kapitanova, Dmitry Roshchupkin, Maria Brzhezinskaya, Vitaly I. Korepanov, S. Koveshnikov, Oleg V. Kononenko

In the present work, it is demonstrated for the first time that a simple, specially developed method for graphene oxide (GO) deposition on large areas opens the prospects of GO’s wide application in planar-group technologies for creating different

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ae9fe37eb107fcf2f475dfcf18362f2
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=102006

Zobrazit plný text záznamu

Breeding Horse Auctions as an Important Link in the Horse-Breeding Business

Autor: V. S. Koveshnikov, A. N. Pobedinskiy, E. V. Slotina

Publikováno v: Complex Systems: Innovation and Sustainability in the Digital Age ISBN: 9783030447021

The main objective of the study is to study in the interval time aspects capturing the dynamics of the effective sale indicators of the young trotter breeds at fifteen auctions in the Moscow farm No. 1. The organizational forms of selling the breedin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::46da76ed0a796736050a480c7f8e06d3
https://doi.org/10.1007/978-3-030-44703-8_59

Zobrazit plný text záznamu

Status and Development Prospects of Horse Breeding in the Altai Region

Autor: A. M. Zaycev, V. S. Koveshnikov

Publikováno v: IOP Conference Series: Earth and Environmental Science. 670:012006

The transition to a market economy caused significant changes in the number of horses and their distribution by category of horse owners, regions, and economic use areas. This study aims to identify the natural and economic factors affecting the quan

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::258aec32ac1796dcb43cbb8d3af4fcb0
https://doi.org/10.1088/1755-1315/670/1/012006

Zobrazit plný text záznamu

Bipolar resistive switching in memristors based on Ge/Si(001) epitaxial layers

Autor: O. Soltanovich, A. V. Kruglov, D. O. Filatov, E. Yakimov, V. A. Vorontsov, D. A. Pavlov, M. E. Shenina, O. N. Gorshkov, Ivan Antonov, S. A. Denisov, S. Koveshnikov, V. Chalkov, V. G. Shengurov

Publikováno v: Journal of Physics: Conference Series. 1695:012158

The Ag/Ge/Si(001) stacks with threading dislocations in Ge layer demonstrating the I-V curves typical for the bipolar resistive switching were investigated. Cross-sectional transmission electron microscopy and electron beam induced current measuremen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::25ce3c5f42e13183737b6172dd1f4b98
https://doi.org/10.1088/1742-6596/1695/1/012158

Zobrazit plný text záznamu

ELECTRON SCATTERING IN BURIED InGaAs/HIGH-K MOS CHANNELS

Autor: Michael Yakimov, P. Nagaiah, Vadim Tokranov, Dmitry Veksler, S. Koveshnikov, Gennadi Bersuker, Rama Kambhampati, Serge Oktyabrsky, Niti Goel

Publikováno v: International Journal of High Speed Electronics and Systems. 20:95-103

Hall electron mobility in buried QW InGaAs channels, grown on InP substrates with HfO 2 gate oxide, is analyzed experimentally and theoretically as a function of top barrier thickness and composition, carrier density, and temperature. Temperature slo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4d5ae9c2bbf00f590a1c24ebb8b742f5
https://doi.org/10.1142/s012915641100643x

Zobrazit plný text záznamu

Small-Signal Response of Inversion Layers in High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs Made With Thin High- $\kappa$ Dielectrics

Autor: Darrell G. Schlom, S. Koveshnikov, Suman Datta, A. Ali, T. Heeg, H. Madan, Rama Kambhampati, Serge Oktyabrsky

Publikováno v: IEEE Transactions on Electron Devices. 57:742-748

Ultrahigh-mobility compound semiconductor-based MOSFETs and quantum-well field-effect transistors could enable the next generation of logic transistors operating at low supply voltages since these materials exhibit excellent electron transport proper

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::88f0b323306a8da3d2c877b54233e545
https://doi.org/10.1109/ted.2010.2041855

Zobrazit plný text záznamu

Akademický článek

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Small Signal Response of Inversion Layers in High Mobility In0.53Ga0.47As MOSFETs Made with Thin High-k Dielectrics

Autor: H. Madan, A. Ali, Suman Datta, S. Koveshnikov

Publikováno v: ECS Transactions. 25:271-284

Ultra-high mobility compound semiconductor-based MOSFETs and quantum-well FETs could enable the next generation of logic transistors operating at low supply voltages since these materials exhibit excellent electron transport properties. While the lon

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddb1538c2e9ff2a3a76bf30ac3e7a166
https://doi.org/10.1149/1.3206626

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání