Zobrazeno 1 - 10
of 89
pro vyhledávání: '"S. Koumetz"'
Autor:
C. Dubois, S. Koumetz
Publikováno v:
Journal of Crystal Growth. 252:14-18
Results on Be diffusion during post-growth rapid thermal annealing at 750°C and 850°C in InGaAs, InGaAsP homostructures and InGaAs/InGaAsP heterostructures, grown by gas source molecular beam epitaxy, are reported. Profiles calculated with the kick
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0140fd890e3707afa5fe8a52dee8b67c
https://doi.org/10.1016/s0022-0248(02)02483-1
https://doi.org/10.1016/s0022-0248(02)02483-1
Publikováno v:
Journal of Physics: Condensed Matter. 13:L483-L486
A systematic study of Be diffusion from a Be-doped (3×1019 cm-3) In0.53Ga0.47As epilayer sandwiched between undoped InP epilayers was carried out. Using the boundary conditions and the segregation phenomena at InGaAs/InP interfaces, and taking into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f0ce61b821daacf1faa2711d32a2bc2
https://doi.org/10.1088/0953-8984/13/22/106
https://doi.org/10.1088/0953-8984/13/22/106
Publikováno v:
Journal of Crystal Growth. 220:46-50
We report results of an investigation of Be diffusion from an In0.53Ga0.47As layer with Be doping level of 3×1019 cm−3, sandwiched between undoped InP layers. The InP/In0.53Ga0.47As/InP heterostructures, grown by gas source molecular beam epitaxy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fd65605d6f9292d1a5271fcbf38b348
https://doi.org/10.1016/s0022-0248(00)00766-1
https://doi.org/10.1016/s0022-0248(00)00766-1
Publikováno v:
Materials Science and Engineering: B. 71:171-174
A systematic study of Be post-growth diffusion from buried Be-doped InGaAs layers in undoped InGaAsP layers grown by gas source molecular beam epitaxy was carried out. The experimental structures consisted of a 2000 A Be-doped (3×1019 cm−3) In0.53
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00edd2cdccdc343a8f4ef19d07facf5c
https://doi.org/10.1016/s0921-5107(99)00369-4
https://doi.org/10.1016/s0921-5107(99)00369-4
Publikováno v:
Physica B: Condensed Matter. :823-826
Be diffusion from 0.2 μm Be doped (3×1019 cm−3) In0.53Ga0.47As layer sandwiched between 0.5 μm undoped In0.73Ga0.27As0.58P0.42 layers, grown by GSMBE has been studied. The samples were subjected to RTA in temperature range from 700°C to 900°C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7b415f5a5daff78bada8be6a9373e59
https://doi.org/10.1016/s0921-4526(99)00513-x
https://doi.org/10.1016/s0921-4526(99)00513-x
Publikováno v:
The European Physical Journal Applied Physics. 8:7-18
Be diffusion during post-growth annealing has been investigated in InGaAs epitaxial layers. Kick-out mechanisms considering species charges, built-in electric field and Fermi-level effect have been studied. Several forms of kick-out mechanism have be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1c62a2f49b5e3988c645e1b50facaa1
https://doi.org/10.1051/epjap:1999223
https://doi.org/10.1051/epjap:1999223
The modeling of beryllium diffusion in InGaAsP layers grown by GSMBE under nonequilibrium conditions
Publikováno v:
The European Physical Journal Applied Physics. 8:19-24
This study reports on Be diffusion in InGaAsP layers grown by gas source molecular beam epitaxy. The experimental structures consisted of a 2000 A Be-doped (3 × 10 9 cm −3 ) In 0.73 Ga 0.27 As 0.58 P 0.42 layer sandwiched between two 5000 A undope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c80766ebf09c051d29457a1696ae1e07
https://doi.org/10.1051/epjap:1999224
https://doi.org/10.1051/epjap:1999224
Publikováno v:
Journal of Alloys and Compounds. 285:L1-L4
In this work we present results of beryllium diffusion during the post-growth rapid thermal annealing at 700–900°C in InGaAsP layers grown by GSMBE. The experimental structure consist of a 2000 A Be-doped layer (3×1019 cm–3) In0.73Ga0.27As0.58P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::362fd4e11c4231df55a00f9bc34e2133
https://doi.org/10.1016/s0925-8388(99)00012-2
https://doi.org/10.1016/s0925-8388(99)00012-2
Publikováno v:
Computational Materials Science. 15:63-68
Be diffusion in InGaAsP quaternary alloys lattice matched to InP by gas source molecular beam epitaxy (GSMBE) was studied using Secondary Ion Mass Spectrometry (SIMS). The experimental structures consisted of a 0.2 μm Be-doped 3×10 19 cm −3 In 0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::107bed17caf060c835abf544cc2bf801
https://doi.org/10.1016/s0927-0256(98)00133-5
https://doi.org/10.1016/s0927-0256(98)00133-5
Publikováno v:
Europhysics Letters (EPL). 45:348-353
The redistribution of the p-type dopant Be during the post-growth rapid thermal annealing in InGaAs layers grown by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry technique. The experimental structures consis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1a551eefa96688b0554ddca0a69f095
https://doi.org/10.1209/epl/i1999-00170-7
https://doi.org/10.1209/epl/i1999-00170-7